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Crucible for growing monocrystalline silicon and preparation method thereof

A technology for growing single crystal silicon and crucibles, applied in the field of crucibles, can solve the problems of inability to continuously pull single crystal silicon, short life span of crucibles, etc. Effect

Inactive Publication Date: 2016-12-07
罗万前
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Problems solved by technology

[0010] The purpose of the present invention is to solve the problem that when the existing quartz glass crucible is used, the short life of the crucible makes it impossible to continuously pull single crystal silicon; thereby providing a long-life crucible for growing single crystal silicon and its preparation method

Method used

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specific Embodiment approach 1

[0028] Embodiment 1: The crucible for growing single crystal silicon is composed of various nitride ceramic crucible blanks and a C / C reinforcement layer; the C / C reinforcement layer is coated on the outer surface of the aforementioned crucible blank;

[0029] The various nitride ceramics are silicon nitride ceramics, oxy-silicon nitride ceramics, sialon ceramics, aron ceramics, magnesium aron ceramics, aluminum nitride ceramics; and another artificial directionally doped boron nitride (or nitride Aluminum) silicon nitride / boron nitride (or aluminum nitride) composite ceramics, oxy-silicon nitride / boron nitride (or aluminum nitride) composite ceramics, Sialon / boron nitride (or aluminum nitride) ) composite ceramics, Aron / boron nitride (or aluminum nitride) composite ceramics and magnesium aron / boron nitride (or aluminum nitride) composite ceramics.

[0030] Among the various nitride ceramic crucible blanks, the first choice is the silicon nitride ceramics directly generated by...

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Abstract

The invention relates to a crucible for growing monocrystalline silicon and a preparation method thereof. The crucible comprises various nitride ceramic crucible billets and a C / C reinforcement layer, wherein the C / C reinforcement layer is wrapped on the outer surface of the crucible billet, and various nitride crucible billets can be prepared by a chemical vapor deposition method, a reaction sintering method and a gas pressure sintering method. According to the present invention, the crucible billet has characteristics of molten silicon erosion resistance, long service life and crystal oxygen content reducing; and with the closely adhered C / C reinforcement layer, the problem that the brittle ceramic is suddenly broken to cause the silicon leakage can be effectively prevented.

Description

technical field [0001] The invention relates to a crucible, in particular to a crucible for growing single crystal silicon Background technique [0002] Monocrystalline silicon is the basic material for manufacturing semiconductor devices, and there is currently no material that can replace it. [0003] Single crystal silicon is mostly prepared by the Czochralski method (CZ), and the process requires a crucible as a container for silicon melt. It has been 50 to 60 years since the beginning of large-scale monocrystalline silicon pulling. In the past, the whole world, without exception, used arc-melted quartz glass crucibles as containers for pulling single crystal silicon and containing silicon melt. The largest number of quartz glass crucibles produced in China is 1.7 million a year, worth 400 to 500 million yuan, and consumes about 50,000 to 60,000 tons of high-quality quartz sand. [0004] The softening point of the quartz glass crucible is much lower than the temperatu...

Claims

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Application Information

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IPC IPC(8): C30B15/10C30B29/06
Inventor 张洪齐
Owner 罗万前
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