Memory system and its error correction method

Abstract

The invention provides a memory system and its error correction method. The memory system includes a resistive non-volatile memory array and a memory controller. The resistive non-volatile memory array stores data and multiple predictive bits. The memory controller is configured to: detect the number of predicted bit errors; when the number of predicted bit errors is equal to or greater than a critical number of predicted bit errors, perform a strong refresh on the data stored in the resistive non-volatile memory array and the predicted bits; And when the number of predicted bit errors is less than the critical number of predicted bit errors, weak refresh of the data and the predicted bits is performed by only refreshing memory cells with data with data bit errors and predicted bits with predicted bit errors. The memory system of the present invention can provide improvements in high temperature memory operation and data retention for resistive non-volatile memories, thereby achieving improved performance in systems and / or integrated circuits including the above memories.

Description

technical field [0001] The present invention relates to a non-volatile memory, and more particularly to a method and system for detecting and correcting errors in the non-volatile memory. Background technique [0002] In general, nonvolatile semiconductor memories retain stored data even when no power is supplied. Transistor-based nonvolatile memory, such as electrically erasable programmable read-only memory (EEPROM), provides fast read processing time and better surge resistance, which makes transistor non-volatile Volatile memory can be used in a variety of applications. Some applications of non-volatile memory include data storage in computer devices, mobile phones, portable audio players, and other consumer electronics. [0003] figure 1 A circuit structure diagram of an exemplary transistor-based non-volatile memory array 100 is shown. The transistor-based nonvolatile memory array 100 includes a plurality of transistor-based nonvolatile memory cells 110 . Each tra...

AI Technical Summary

Problems solved by technology

For example, high operating temperature can lead to data errors, such as flipped bits in some emerging non-volatile memory (such as resistive non-volatile memory)

These data errors may lead to system failure, data corruption, and / or security breaches

Additionally, exposing emerging non-volatile memories to high manufacturing and storage temperatures can lead to data retention issues such as system data drift, data loss, critical data corruption, valid data corruption, and reduced data retention time

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