Rhodium plating method of molybdenum sheets used for semiconductors
A semiconductor and molybdenum sheet technology, which is applied in the field of rhodium plating process for semiconductor molybdenum sheets, can solve the problems of limiting the thickness of the non-crack coating, pores or shedding, and discoloration of the coating, and achieve good compactness, stable properties, and uniform rhodium coating Effect
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Embodiment 1
[0023] A kind of molybdenum sheet rhodium plating process for semiconductors of the present embodiment is mainly realized by the following technical scheme: a kind of molybdenum sheet rhodium plating process for semiconductors is used for electroplating rhodium molybdenum sheets for semiconductors with a molybdenum mass fraction greater than 99.9%, including The following steps:
[0024] Step 1: preprocessing;
[0025] Step 2: pickling;
[0026] Step three: alkaline washing;
[0027] Step 4: Rhodium plating.
[0028] The pretreatment process is used to thoroughly remove impurities such as floating ash and dust on the surface of the molybdenum sheet as far as possible;
[0029] The pickling and alkali cleaning processes are used to remove the oxide layer on the surface of the molybdenum sheet, and do substrate surface treatment for electroplating rhodium;
[0030] The rhodium electroplating process is used to coat a uniform rhodium layer on the surface of the molybdenum she...
Embodiment 2
[0033] This embodiment is further optimized on the basis of the above embodiments. Further, in order to better realize the present invention, a rhodium plating process for molybdenum sheets for semiconductors is used for electroplating rhodium on molybdenum sheets for semiconductors with a molybdenum mass fraction greater than 99.9%. Include the following steps:
[0034] Step 1: Pretreatment; specifically, soaking the molybdenum sheet with deionized water and ultrasonic waves for 2-6 minutes to remove impurities such as dust on the surface of the molybdenum sheet.
[0035] Step 2: pickling; specifically, the pretreated molybdenum flakes quickly enter the pickling tank, and in the pickling solution at a current density of 0.02-0.2A / dm 2 Power on and react for 1-5 minutes, and then rinse the pickling solution on the surface of the molybdenum sheet with deionized water; the pickling solution is a sulfuric acid solution with a mass fraction of 18-22%.
[0036] Step 3: Alkali wash...
Embodiment 3
[0040] This embodiment is further optimized on the basis of the above-mentioned embodiments. Further, in order to better realize the present invention, a rhodium-plating process for molybdenum sheets for semiconductors is aimed at installing 6 pieces of molybdenum sheets with a diameter of 80-110mm at the same time on a pair of hangers. Molybdenum wafers are electroplated, including the following steps:
[0041] Step 1: Pretreatment; specifically, soaking the molybdenum sheet with deionized water and ultrasonic waves for 2-6 minutes to remove impurities such as dust on the surface of the molybdenum sheet.
[0042] Step 2: pickling; specifically, the pretreated molybdenum flakes quickly enter the pickling tank, and in the pickling solution at a current density of 0.02-0.2A / dm 2 Power on and react for 1-5 minutes, and then rinse the pickling solution on the surface of the molybdenum sheet with deionized water; the pickling solution is a sulfuric acid solution with a mass fractio...
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Abstract
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