Isoepitaxial-growth gallium-nitride-base photocatalytic material and preparation method thereof

Abstract

The invention discloses an isoepitaxial-growth gallium-nitride-base photocatalytic material and a preparation method thereof. The gallium-nitride-base photocatalytic material sequentially comprises an n-type gallium-nitride-base substrate, a gallium-nitride-base epitaxial layer and a metal layer from bottom to top. The GaN-base photocatalytic material isoepitaxial growth on the n-type gallium-nitride-base substrate is adopted to solve the problem of poor epitaxial layer crystal quality of the heteroepitaxy growth due to lattice mismatch and thermal mismatch, thereby omitting the step of growing the buffer layer and other steps for enhancing the heteroepitaxy grown crystal quality. By adopting the n-type gallium-nitride-base substrate, the substrate and GaN-base epitaxial layer grown by MOCVD (metal-organic chemical vapor deposition) together constitute the PIN heterostructure, and the photon-generated carrier can be effectively separated under the action of the built-in field, thereby enhancing the catalytic activity of the material. The nitride photocatalytic material has excellent degradation activity for methyl orange and other azo dyes under the irradiation of light, which indicates that the photocatalytic material has potential application value in the field of photocatalysis and has wide application prospects in the aspect of sewage treatment.

Description

technical field [0001] The invention relates to sewage treatment and energy utilization technology, in particular to a homoepitaxially grown gallium nitride-based photocatalytic material and a preparation method thereof. Background technique [0002] With the rapid expansion of population and the rapid development of industry, the pollution of energy and water resources is two important challenges facing the world. A large amount of pollutant discharge, especially the large amount of water-soluble azo dyes such as methyl orange in the printing and dyeing industry. , deteriorating the environmental water quality. Semiconductor photocatalytic degradation of pollutants has important research significance and application value as a green technology. In the research of semiconductor photocatalysis, searching for new and efficient photocatalytic materials, and preparing photocatalytic materials with high stability, high catalytic activity and large spectral response range, has gr...

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Problems solved by technology

[0005] Metal organic compound vapor phase epitaxial growth MOCVD (metalorganic chemical vapor deposition) has been widely used to grow multi-layer heterostructure nitride materials with reliable quality. At present, most of the substrate materials used for heteroepitaxial growth of GaN are sapphire. One of the ubiquitous The problem is that there is a large lattice mismatch and thermal expansion coefficient mismatch between the substrate and GaN, which usually leads to a large number of defects (up to 10 8 ~10 10 cm -2 )

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