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A micro-nano array structure, preparation method and application

A technology of array structure and nanostructure, which is applied in the field of micro-nano array structure and preparation, can solve the problems of inability to achieve broad-spectrum absorption, practical application obstacles, and difficulty in rapid processing, etc., to achieve infrared wide-spectrum absorption and large-area rapid The effect of processing and processing convenience

Active Publication Date: 2019-01-08
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The general silicon carbide infrared absorption technology is realized by processing regular array nanostructures on the surface of silicon carbide, but this regular array of nanostructures can only achieve absorption at a certain wavelength, and cannot achieve broad-spectrum absorption.
Moreover, these processes generally require expensive processing methods, such as electron beam exposure, focused ion beam etching and other technologies, it is difficult to achieve large-area rapid processing, which hinders practical applications

Method used

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  • A micro-nano array structure, preparation method and application
  • A micro-nano array structure, preparation method and application
  • A micro-nano array structure, preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0053] The preparation of the micro-nano array structure includes the following steps:

[0054] (1) Spin-coat a 2-μm-thick UV photoresist on a 330-μm-thick silicon carbide substrate, bake for 5 minutes after spin-coating, and then use a UV lithography machine to expose for 40 seconds, then develop in a developer for 40 seconds;

[0055] (2) After plating 400nm copper with an electron beam evaporation coating instrument, put it in acetone to remove glue;

[0056] (3) Using reactive ion etching, the columnar array structure is transferred to the silicon carbide substrate, and the structural height of the micron column is precisely controlled;

[0057] (4) 300 nm of copper was plated with an electron beam evaporation coating apparatus, and then reactive ion etching was used for 40 min to obtain a micro-nano structure.

[0058] The prepared micro-nano array structure is as follows figure 2 As shown, the micro-pillar is a cylinder with a period of 8 μm, a diameter of 6 μm, and a...

Embodiment 2

[0060] The preparation method is the same as in Example 1, and the prepared micro-nano array structure is as follows: image 3 As shown, the microcolumn is a square column with a period of 6 μm, a side length of 4 μm, and a height of 14 μm; the nanostructure is a nanocone with a bottom cross-sectional area of ​​0.04-4 μm 2 , with a height of 2-8 μm. The absorbance in the band around 10-13μm is greater than 80%.

Embodiment 3

[0062] The preparation method is the same as in Example 1, and the prepared micro-nano array structure is as follows: Figure 4 As shown, the micro-column is an octagonal column with a period of 6 μm. The cross-shaped column is composed of two cuboids intersecting. Each cuboid is 4 μm long, 1.657 μm wide, and 8.5 μm high; the nanostructure is a nanocone. The cross-sectional area is 0.04-4μm 2 , with a height of 2-8 μm. The absorbance in the band around 10-13μm is greater than 85%.

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Abstract

The invention relates to the technical field of micro-nano machining, and specifically relates to a micro-nano array structure, a preparation method and application. The structure comprises a silicon carbide substrate, micron cylinders on the silicon carbide substrate and nanostructures on the surfaces of the silicon carbide substrate and the micro cylinders. According to the micro-nano array structure, the preparation method and the application which are disclosed by the invention, the micron cylinders are free of limitation of shape, and the nano structures are free of limitation of shape; intermediate infrared wide spectrum adsorption of 10 to 13[mu]m is realized, and absorbance is nearly 1; the micro-nano array substrate is simple in material and single in operation step, the nanostructures are convenient to machine, and equipment of ultra-violet lithography and the like is used, so that cost is reduced, large-area rapid machining can be implemented, and a foundation is laid for the practical application.

Description

technical field [0001] The invention relates to the technical field of micro-nano surface polarization processing, in particular to a micro-nano array structure, preparation method and application. Background technique [0002] Infrared absorption, infrared stealth and infrared radiation cooling technologies are getting more and more attention in civilian and military industries. To achieve wide-spectrum and high-intensity infrared absorption is an important direction of scientific and technological development. It is difficult for traditional infrared absorption methods to achieve wide-spectrum, high-intensity infrared absorption characteristics and work in extremely harsh environments. However, silicon carbide devices can be used in extreme conditions due to their superior mechanical, thermal and mechanical properties. It is widely favored to work in the environment. [0003] Surface Phonon Polariton (SPhP) refers to the phonon propagating along the polar crystal surface ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/04B81C1/00
Inventor 陈东学董建杰刘前
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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