Testing method and device for dynamic switching characteristics of IGBT (Insulated Gate Bipolar Transistor) by utilizing double-pulse technology

A technology of dynamic switching and testing methods, which is applied in the direction of measuring devices, single semiconductor device testing, measuring electricity, etc., to achieve the effects of accurate test results, small oscillation, and reduced parasitic parameters
CN106291310AInactive Publication Date: 2017-01-04TIANJIN UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
TIANJIN UNIV
Publication Date
2017-01-04
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention relates to a testing method and device for dynamic switching characteristics of an IGBT (Insulated Gate Bipolar Transistor) by utilizing a double-pulse technology. A double-pulse signal is sent out through utilizing a signal chip microcomputer; a tested IGBT reaches rated working current by a first pulse and a second pulse is used for testing dynamic characteristics of the IGBT; and dynamic voltage and current parameters of the IGBT in a switching-on / off process are tested by utilizing an oscilloscope and a difference isolating probe. The double-pulse signal passes through an IGBT driving board to control the IGBT to be switched on / off in extremely short time; an experiment circuit and a testing circuit are isolated through an isolation transformer so that mutual interference of the signals is avoided; current of a main circuit and voltage at two ends of the IGBT, and voltage at an output end of a driving circuit are measured by utilizing the isolation transformer, the oscilloscope and the difference isolating probe; an oscillogram is recorded by the oscilloscope; and dynamic switching characteristic parameter sizes of the IGBT are calculated according to ascending and descending time, delaying time and on-off energy. Parasitic parameters in the circuits are reduced and a testing result is accurate.
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Description

technical field

[0001] The invention relates to a method and device for quickly measuring the dynamic switching characteristic parameters of an insulated gate bipolar transistor (IGBT). Example) The drive terminal inputs a double pulse signal to realize the rapid turn-off and turn-on of the IGBT, and then uses a measurement system that eliminates power interference to measure the dynamic characteristics of the IGBT (rise and fall time, rise and fall delay time, switching energy). This test system is based on double-pulse technology, and the IGBT drive circuit is optimized. The single-chip microcomputer programming output signal and the IGBT drive board are used to isolate the output signal and boost the voltage to turn on and off the IGBT. For testing the main circuit, the DBC substrate is plated with copper to form a copper plate to form a loop for testing the main circuit. This system can test the dynamic switching characteristics of the IGBT with a withstand voltage of up ...

Claims

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