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GaN-base enhanced high-electron-mobility transistor with adjustable threshold voltage

A technology with high electron mobility and threshold voltage, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low threshold voltage and large on-resistance, increase threshold voltage, reduce channel resistance, and suppress false positives. The effect of opening

Inactive Publication Date: 2017-01-04
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the field of medium and low voltage applications (less than 600V), the present invention proposes a GaN-based enhanced HEMT with adjustable threshold voltage in order to overcome the problems of large on-resistance and low threshold voltage of the existing GaN-based enhanced HEMT. mobility transistor

Method used

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  • GaN-base enhanced high-electron-mobility transistor with adjustable threshold voltage

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1) GaN buffer layer 2 and AlGaN barrier layer 3 are sequentially deposited on the substrate 1 from bottom to top, the thickness of the GaN layer is 100 μm, and the thickness of the AlGaN layer is 10 nm;

[0026] 2) After coating the surface of the AlGaN barrier layer 3 with photoresist, after exposure and development, a groove is formed on one edge by ICP-RIE dry etching, and the groove is overcut to the GaN buffer layer 2;

[0027] A vertical conductive channel 9 is formed on the surface of the GaN buffer layer 2 which is located at the side of the trench and not covered by the metal source electrode 6 . The vertical length of the cross-section of the vertical conduction channel 9 is 25nm, so as to reduce the channel resistance and increase the on-current. Treat with 26% tetramethylammonium hydroxide (TMAH) at 85°C for 10min.

[0028] 3) Cleaning after removing the glue, and then coating the photoresist on the entire surface, after exposure and development, respective...

Embodiment 2

[0032] 1) GaN buffer layer 2 and AlGaN barrier layer 3 are sequentially deposited on the substrate 1 from bottom to top, the thickness of the GaN layer is 1 μm, and the thickness of the AlGaN layer is 50 nm;

[0033] 2) After coating the surface of the AlGaN barrier layer 3 with photoresist, after exposure and development, a groove is formed on one edge by ICP-RIE dry etching, and the groove is overcut to the GaN buffer layer 2;

[0034] A vertical conductive channel 9 is formed on the surface of the GaN buffer layer 2 which is located at the side of the trench and not covered by the metal source electrode 6 . The vertical length of the cross-section of the vertical conduction channel 9 is 1000nm, so as to reduce the channel resistance and increase the on-current. Treat with 30% tetramethylammonium hydroxide (TMAH) at 85°C for 13min.

[0035] 3) Cleaning after removing the glue, and then coating the photoresist on the entire surface, after exposure and development, respective...

Embodiment 3

[0039] 1) GaN buffer layer 2 and AlGaN barrier layer 3 are sequentially deposited on the substrate 1 from bottom to top, the thickness of the GaN layer is 40 μm, and the thickness of the AlGaN layer is 30 nm;

[0040] 2) After coating the surface of the AlGaN barrier layer 3 with photoresist, after exposure and development, a groove is formed on one edge by ICP-RIE dry etching, and the groove is overcut to the GaN buffer layer 2;

[0041]A vertical conductive channel 9 is formed on the surface of the GaN buffer layer 2 which is located at the side of the trench and not covered by the metal source electrode 6 . The vertical length of the cross-section of the vertical conduction channel 9 is 800nm, so as to achieve the purpose of reducing the channel resistance and increasing the conduction current. Treat with 20% tetramethylammonium hydroxide (TMAH) at 85°C for 15min.

[0042] 3) Cleaning after removing the glue, and then coating the photoresist on the entire surface, after ex...

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Abstract

The invention discloses a GaN-base enhanced high-electron-mobility transistor with adjustable threshold voltage. A substrate is successively coated with a GaN buffer layer and an AlGaN barrier layer from bottom to top. A trench is etched on the edge of one side of the GaN buffer layer and the edge of one side of the AlGaN barrier layer. The upper surface of the GaN buffer layer at the bottom of the trench is covered with a metal source electrode. A side, far from the trench, of the upper surface of the AlGaN barrier layer is covered with a metal drain electrode. A part between the metal drain electrode and the metal source electrode is coated with an insulating dielectric which completely covers the metal source electrode. The insulating dielectric near a vertical conductive channel is coated with gate metal. The channel resistance is reduced by the depth of the vertical channel. The threshold voltage of a HEMT device is adjusted by ion implantation, surface treatment and gate metal selection so that the transistor may better meet the requirements of the low-middle voltage (less than 600 V) power application.

Description

technical field [0001] The invention relates to an adjustable transistor, in particular to a GaN-based enhanced high electron mobility transistor (HEMT) with an adjustable threshold voltage, and the invention belongs to the technical field of semiconductors. Background technique [0002] Compared with silicon materials, gallium nitride, a group III-V compound material, has a larger band gap and higher breakdown field strength, and is an outstanding representative of the third-generation semiconductor materials. Different from traditional silicon-based semiconductor devices, AlGaN / GaN high electron mobility transistors based on gallium nitride materials use the polarization effect in the heterojunction of gallium nitride to obtain high two-dimensional electron gas concentration at the heterojunction interface, The lateral two-dimensional electron gas channel with high electron mobility and high saturation electron drift velocity realizes the conduction of the device. These e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/336
CPCH01L29/778H01L29/06H01L29/66431
Inventor 谢刚李雪阳侯明辰盛况
Owner ZHEJIANG UNIV