Heterojunction solar cell and manufacturing method thereof

A solar cell and heterojunction technology, which is applied in the field of solar cells, can solve the problems of reducing the open circuit voltage of the battery, increasing the series resistance of the battery, and decreasing the conversion efficiency of the battery, and achieves the effect of increasing the open circuit voltage, reducing the series resistance and suppressing bombardment.

Inactive Publication Date: 2017-01-04
江苏神科新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The ITO film has dual functions of optical transparency and conductivity, and plays a key role in the collection of effective carriers, but a certain Schottky contact will be formed between the ITO film layer and the amorphous silicon film layer, and the Schottky contact will cause The reduction of the built-in electric field leads to a reduction of the open circuit voltage, and when the barrier height is large, it will also cause an additional series resistance
Therefore, a higher barrier height reduces the open circuit voltage of the battery, and also increases the series resistance of the battery. The increase of the series resistance will lead to a decrease in the conversion efficiency of the battery

Method used

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  • Heterojunction solar cell and manufacturing method thereof
  • Heterojunction solar cell and manufacturing method thereof
  • Heterojunction solar cell and manufacturing method thereof

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preparation example Construction

[0060] The preparation method includes: preparing a crystalline silicon substrate 1; depositing a first intrinsic amorphous layer 2 on the light-receiving surface of the crystalline silicon substrate 1; depositing a second intrinsic amorphous layer 5 on the back of the substrate 1 Depositing a first doped layer 3 on the first intrinsic amorphous layer 2; depositing a second doped layer 6 on the second intrinsic amorphous layer 5; depositing a second doped layer 6 on the first doped layer 3 depositing a first doped titanium oxide film layer 10; depositing a first transparent conductive layer 4 on the first doped titanium oxide film layer 10; depositing a second doped titanium oxide film layer on the second doped layer 6 film layer 11; depositing a second transparent conductive layer 7 on the second doped titanium oxide film layer 11; printing a gate electrode 9 on the first transparent conductive layer 4 and the second transparent conductive layer 7.

[0061] Specifically, CVD ...

Embodiment 1

[0068] Prepare an N-type monocrystalline silicon wafer 1 with a thickness of 200um, and then sequentially deposit 8nm intrinsic amorphous silicon film layers on the light-receiving surface of the N-type monocrystalline silicon wafer 1 as the first intrinsic amorphous layer 2 and A 20nm p-type amorphous silicon film layer is used as the first doped layer 3; then an 8nm intrinsic amorphous silicon film layer is sequentially deposited on the back of the n-type single crystal silicon wafer 1 by PECVD method as the second intrinsic amorphous silicon film layer. The n-type amorphous silicon film layer of layer 5 and 30nm is used as the second doped layer 6; then adopts RPD method to deposit 10nm TiO on the p-type amorphous silicon film layer 3 2 : W film layer 10; followed by magnetron sputtering on TiO 2 : Deposit an 80nm ITO film layer on the W film layer 10 as the first transparent conductive layer 4; then use the RPD method to deposit 10nm TiO on the n-type amorphous silicon fil...

Embodiment 2

[0070] Prepare an N-type monocrystalline silicon wafer 1 with a thickness of 180um, and then sequentially deposit 10nm intrinsic amorphous silicon film layers on the light-receiving surface of the N-type monocrystalline silicon wafer 1 as the first intrinsic amorphous layer 2 and A 20nm p-type amorphous silicon film layer is used as the first doped layer 3; then a 10nm intrinsic amorphous silicon film layer is sequentially deposited on the back of the n-type single crystal silicon wafer 1 by PECVD method as the second intrinsic amorphous silicon film layer. The n-type amorphous silicon film layer of layer 5 and 30nm is used as the second doped layer 6; then adopts RPD method to deposit 10nm TiO on the p-type amorphous silicon film layer 3 2 : Nb film layer 10; followed by magnetron sputtering on TiO 2 : Deposit an 80nm ITO film layer on the Nb film layer 10 as the first transparent conductive layer 4; then use the RPD method to deposit 10nm TiO on the n-type amorphous silicon ...

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Abstract

The invention relates to the field of solar cells, and discloses a heterojunction solar cell. The heterojunction solar cell comprises a silicon substrate, a first intrinsic layer, a second intrinsic layer, a first doped layer, a second doped layer, a first doped titanium oxide film layer, a second doped titanium oxide film layer, a first transparent conducting layer and a second transparent conducting layer, wherein the first doped titanium oxide film layer is arranged between the first doped layer and the first transparent conducting layer, and the second doped titanium oxide film layer is arranged between the second doped layer and the second transparent conducting layer. The invention further discloses a manufacturing method of the heterojunction solar cell. As the doped titanium oxide film layer is formed before forming each transparent conducting layer, open-circuit voltage of the cell can be increased, and the series resistance of the cell can be reduced.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a heterojunction solar cell and a preparation method thereof. Background technique [0002] Solar cells can directly convert sunlight into electricity, so as a new energy source, more and more countries are paying attention. [0003] Heterojunction with Intrinsic Thin layer solar cell, referred to as HIT solar cell, was first invented by Sanyo Corporation. It is an amorphous silicon / crystalline silicon heterojunction solar cell, which is made of a crystalline silicon substrate and an amorphous silicon film. hybrid solar cells. Due to its high photoelectric conversion efficiency, low temperature coefficient and preparation technology under relatively low temperature conditions, HIT solar cells have become one of the key directions of research and development in the photovoltaic industry in recent years. At present, the efficiency of HIT solar cells industrialized by Japan'...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022466H01L31/1884Y02E10/50Y02P70/50
Inventor 李艺明邓国云李浩
Owner 江苏神科新能源有限公司
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