Nanowire field effect transistor and formation method therefor

Abstract

The invention discloses a nanowire field effect transistor and a formation method therefor. The formation method for the nanowire field effect transistor comprises the steps of providing a semiconductor substrate, wherein multiple suspending nanowires are formed on the semiconductor substrate; forming a pseudo-gate structure which surrounds the nanowires; forming a dielectric layer which covers the semiconductor substrate and the pseudo-gate structure, wherein the surface of the dielectric layer is flush with the surface of the pseudo-gate structure; removing the pseudo-gate structure, and forming a groove for exposing the surfaces of the nanowires; performing back etching to remove a partial thickness of the nanowires in the groove; performing epitaxial growth on the surfaces of the nanowires after a partial thickness of the nanowires is removed to form a semiconductor channel layer; forming a high-K gate dielectric layer on the surface of the semiconductor channel layer; and forming a metal gate electrode on the high-K gate dielectric layer, wherein the nanowires are surrounded by the metal gate electrode. The threshold value voltage fluctuation of the nanowire field effect transistor formed by the formation method is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor production, in particular to a nanowire field effect transistor and a forming method thereof. Background technique [0002] Integrated circuits have evolved from integrating dozens of devices on a single chip to integrating millions of devices. The performance and complexity of traditional integrated circuits have far exceeded the original imagination. To achieve increases in complexity and circuit density (the number of devices that can fit on a given chip area), the feature size of a device, also called "geometry," has grown with each generation of integrated circuits Getting smaller and smaller. Increasing integrated circuit density not only increases the complexity and performance of integrated circuits, but also reduces costs for consumers. Based on the demand for high density, high speed, and low power consumption of integrated circuit chips, integrated circuits are increasingly developing in...

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Problems solved by technology

[0006] The performance of nanowire field effect transistors formed by existing technologies still needs to be improved

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