Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode

A technology of a whispering gallery mode and an integrated electrode is applied in the field of femtosecond laser micromachining technology to prepare an integrated electrode electro-optically tuned whispering gallery mode optical microcavity, which can solve the problems of low refractive index, low quality factor, complicated preparation process, etc. Refractive index ratio, high Q value, the effect of broadening the application range

Inactive Publication Date: 2017-02-01
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF8 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the shortcomings of the existing electro-optic modulatorable microcavity and the surrounding environment, such as low refractive index ratio, low quality factor, cumbersome preparation process, etc. A three-dimensional electrode and an optical whispering gallery mode microcavity, and a method for realizing independent electro-optical tuning of the mode, the distribution area of ​​the three-dimensional optical whispering gallery mode microcavity mode prepared by this method is directly in contact with the air, and has a high quality factor and modulation efficiency, said Dielectric film materials include various dielectric film materials with electro-optic effects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode
  • Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode
  • Fabrication method for electro-optical tuning whispering gallery mode microcavity of integrated electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present invention will be further described below through the examples and accompanying drawings, but the protection scope of the present invention should not be limited by this.

[0035] see first figure 1 , figure 1 It is a schematic flow chart of the method for preparing an integrated electrode electro-optic tunable whispering gallery mode microcavity by femtosecond laser in the present invention. Now, the commercialized lithium niobate thin film product is taken as an example to illustrate the method of the present invention, as figure 1 As shown in (a), the lithium niobate thin film product has a three-layer structure: the first layer is a 700nm thick x-cut lithium niobate single crystal thin film layer 1, and the specific orientation of its crystal axis is as follows figure 2 As shown in the middle coordinates; the second layer is a silicon dioxide sacrificial layer 2 with a thickness of 2 μm; the third layer is a lithium niobate base layer 3 with a thicknes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for fabricating an electro-optical tuning whispering gallery mode microcavity of an integrated electrode by a femtosecond laser microprocessing technology comprises the steps of helping to induce electrode chemical plating by a femtosecond laser, etching a microcavity structure by the femtosecond laser, grinding focused ion beam and performing chemical corrosion. In the three-dimensional whispering gallery mode optical microcavity fabricated according to the method, continuous total internal reflection of light is achieved by the ratio between refractive indexes of a cavity and an external environment, the three-dimensional whispering gallery mode optical microcavity has extremely high surface smoothness, and a small mode size and a high quality factor (larger than 10<5>) are supported; and meanwhile, accurate control on an electric field around the microcavity can be achieved by a transversely-integrated electrode, continuous adjustment of the refractive indexes is achieved by an electro-optical effect of a cavity material, and the purpose of mode cavity tuning in a whispering gallery mode is further achieved. The method is applicable to various dielectric thin film materials with electro-optical effects.

Description

technical field [0001] The invention relates to femtosecond laser processing, in particular to a method for preparing integrated electrode electro-optic tuning whispering gallery mode optical microcavities by femtosecond laser microprocessing technology. The method is applicable to various dielectric film materials with electro-optic effect. Background technique [0002] The optical microcavity of the whispering gallery mode realizes continuous total internal reflection of light through the high refractive index ratio of the cavity and the surrounding environment, confines the light field to a small volume for a long time, has a high quality factor, and effectively enhances light and matter. interaction. The realization of cavity mode tunable function has greatly expanded the application prospects of optical microcavities in frontier fields such as quantum optics, cavity quantum electrodynamics, information optics, and nonlinear optics. [0003] The current common cavity m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10
CPCH01S5/1042
Inventor 程亚汪旻林锦添方致伟廖洋王鹏乔玲玲
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products