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A kind of preparation method of non-polarized preferentially oriented zno-based polycrystalline flakes

A preferred orientation and non-polarization technology, applied in chemical instruments and methods, polycrystalline material growth, single crystal growth, etc., can solve the problems of complex process, high cost, expensive raw material cost, etc., and achieve simple and repeatable preparation process Good, low-cost results

Active Publication Date: 2018-10-23
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

M. M. C. Chou et al. (Epitaxial growth of nonpolar m-plane ZnO (10-10) on large-size LiGaO 2 (100) substrates. ThinSolid Films, 2011, 519(11): 3627-3631.) by chemical vapor deposition on LiGaO with a small mismatch with the non-polarized crystal plane of ZnO 2 (100) grown on a single crystal (10 0) oriented ZnO thin film, but the key technology needs to use the pulling method to prepare large-sized (diameter ~60mm, length ~140nn) LiGaO 2 (100) single crystal, expensive raw material cost
[0005] In summary, the preparation of ZnO-based materials with non-polarization orientation in the prior art is complicated, expensive, and must rely on the substrate as a physical support, and cannot be independently formed into a film, which limits its application.

Method used

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  • A kind of preparation method of non-polarized preferentially oriented zno-based polycrystalline flakes
  • A kind of preparation method of non-polarized preferentially oriented zno-based polycrystalline flakes
  • A kind of preparation method of non-polarized preferentially oriented zno-based polycrystalline flakes

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Experimental program
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Effect test

Embodiment 1

[0023] The preparation method of the non-polarized preferred orientation ZnO-based polycrystalline sheet described in this embodiment specifically includes the following steps:

[0024] (1) ZnO with an average particle size of 200 nm and Al with an average particle size of 200 nm 2 o 3 The nano-powders are mixed according to the ratio of Zn: Al molar ratio of 1:0, and then ground in an agate mortar for ≥2h, and then the mixed raw materials are pressed under the condition of uniaxial pressure of 3MPa and holding time of 10min to form a thickness of 4mm, a diameter of 20mm isotropic blocks.

[0025] (2) Place the isotropic block obtained in step (1) in a corundum crucible (firing temperature 1850°C, sintering time 40h, 99% alumina) for high-temperature sintering. The spontaneous formation between the isotropic block and the corundum crucible has (10 0) ZnO-based polycrystalline flakes with preferred orientation, about 100 μm thick.

[0026] The high-temperature sintering pr...

Embodiment 2

[0029] The preparation method of the non-polarized preferred orientation ZnO-based polycrystalline sheet described in this embodiment specifically includes the following steps:

[0030] (1) ZnO with an average particle size of 150nm and Al with an average particle size of 150nm 2 o 3 Nano-powders are mixed according to the ratio of Zn: Al molar ratio of 0.98: 0.02, and then ground in an agate mortar for ≥ 2h, and then the mixed raw materials are pressed under the condition of uniaxial pressure of 4MPa and holding time of 5min to form a thickness of 7mm and a diameter of 20mm isotropic blocks.

[0031] (2) Place the isotropic block obtained in step (1) in a corundum crucible (firing temperature 1800°C, firing time 35h, 99% alumina) for high-temperature sintering. After sintering, the isotropic The spontaneous formation between the block and the corundum crucible has (10 0) ZnO-based polycrystalline flakes with preferred orientation, about 100 μm thick.

[0032] The process...

Embodiment 3

[0035] The preparation method of the non-polarized preferred orientation ZnO-based polycrystalline sheet described in this embodiment specifically includes the following steps:

[0036] (1) ZnO with an average particle size of 250 nm and Al with an average particle size of 250 nm 2 o 3 Nano-powders are mixed according to the ratio of Zn: Al molar ratio of 0.95: 0.05, and then ground in an agate mortar for ≥ 2h, and then the mixed raw materials are pressed under the condition of uniaxial pressure of 5MPa and holding time of 20min to form a thickness of 2mm and a diameter of 20mm isotropic blocks.

[0037] (2) Place the isotropic block obtained in step (1) in a corundum crucible (firing temperature 1900°C, sintering time 45h, 99% alumina) for high-temperature sintering. After sintering, the isotropic The spontaneous formation between the block and the corundum crucible has (10 0) ZnO-based polycrystalline flakes with preferred orientation, about 100 μm thick.

[0038] The p...

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Abstract

The invention discloses a method for preparing a self-formed non-polar preferred orientation ZnO based multi-crystal sheet, and belongs to the field of functional materials. The method comprises the following steps: mixing and grinding ZnO and nano powder of a doped metal oxide in an agate mortar according to an expected ratio; pressing grinded mixed raw materials into a thick sheet block material by using a pressing machine; performing high-temperature sintering on the raw material blocks inside a corundum crucible; and after the steps are completed, enabling the isotropy ZnO based multi-crystal block material and the corundum crucible after high-temperature sintering to form the ZnO based multi-crystal sheet with preferred height of (10 <->1 0) and the thickness about 100 [mu]m in a self-formed manner. The method disclosed by the invention is simple, good in repeatability and low in cost.

Description

technical field [0001] The invention discloses a method for preparing a self-forming non-polarization preferred orientation ZnO-based polycrystalline sheet, which belongs to the field of functional materials. Background technique [0002] The hexagonal wurtzite structure ZnO is a semiconductor with a wide bandgap and a direct bandgap of the II-VI group. The bandgap width at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV. It has good ultraviolet luminescence characteristics and visible light transparency, and has been widely used. In the fields of ultraviolet light-emitting diodes and transparent conductive devices. [0003] The (0001) plane of ZnO has the lowest surface free energy, so that it usually grows preferentially along the c-axis direction, and the non-centrosymmetric wurtzite structure makes ZnO spontaneously polarize along the c-axis direction, forming Built-in electric field, under the action of the built-in electric field, the el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/16C30B28/02
CPCC30B28/02C30B29/16
Inventor 宋世金虞澜张雪峰邱兴煌谈文鹏胡建力钟毅
Owner KUNMING UNIV OF SCI & TECH