A dislocation film anti-reflection structure with wide-spectrum and wide-angle characteristics
A film layer and wide-angle technology, applied in photovoltaic power generation, electrical components, circuits, etc., to achieve good anti-reflection effect, simple structure, and easy processing
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Embodiment 1
[0019] An anti-reflection structure with a dislocation film layer having wide-spectrum and wide-angle characteristics, the specific implementation method is as follows:
[0020] Silicon material is selected as the semiconductor base material, and the silicon nanopillars are arranged in a hexagonal array. The distance between the centerlines of each nanopillar is 600nm, the diameter of the silicon nanopillars is 300nm, and the height of the nanopillars is 250nm.
[0021] The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 45 nm.
[0022] The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 120 nm.
[0023] The anti-reflection structure of the dislocation film layer obtained in this embodiment, when the incident angles are 0°, 10°, 20°, 30°, 40°, 50°, and 60° respectively, when the wavelength range is 300nm-2500nm, the passage time...
Embodiment 2
[0025] An anti-reflection structure with a dislocation film layer having wide-spectrum and wide-angle characteristics, the specific implementation method is as follows:
[0026] The silicon material is selected as the semiconductor base material, the arrangement of the silicon nanopillars is a periodic array, the array period is 1000nm, the diameter of the silicon nanopillars is 500nm, and the height of the nanopillars is 400nm.
[0027] The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 45 nm.
[0028] The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 120 nm.
[0029] The anti-reflection structure of the dislocation film layer obtained in this embodiment, when the incident angles are 0°, 10°, 20°, 30°, 40°, 50°, and 60° respectively, when the wavelength range is 300nm-2500nm, the passage time is limited. The average reflect...
Embodiment 3
[0031] An anti-reflection structure with a dislocation film layer having wide-spectrum and wide-angle characteristics, the specific implementation method is as follows:
[0032] The silicon material is selected as the semiconductor base material, the arrangement of the silicon nanopillars is a periodic array arrangement, the array period is 800nm, the diameter of the silicon nanopillars is 400nm, and the height of the nanopillars is 300nm.
[0033] The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 30 nm.
[0034] The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 140 nm.
[0035] The anti-reflection structure of the dislocation film layer obtained in this embodiment, when the incident angles are 0°, 10°, 20°, 30°, 40°, 50°, and 60° respectively, when the wavelength range is 300nm-2500nm, the passage time is limited. The aver...
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