a kind of moo 3 /mos 2 /lif flexible heterojunction solar cell and its preparation method

A technology of solar cells and heterojunctions, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of high production costs, achieve good application prospects, reduce interface defects, and have strong controllability.

Inactive Publication Date: 2017-10-24
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

At present, silicon is the most commonly used material for solar cells. The solar cells prepared have high conversion efficiency and the technology is relatively mature.

Method used

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  • a kind of moo <sub>3</sub> /mos <sub>2</sub> /lif flexible heterojunction solar cell and its preparation method
  • a kind of moo <sub>3</sub> /mos <sub>2</sub> /lif flexible heterojunction solar cell and its preparation method
  • a kind of moo <sub>3</sub> /mos <sub>2</sub> /lif flexible heterojunction solar cell and its preparation method

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preparation example Construction

[0040] MoO of the present invention 3 / MoS 2 A preparation method for a LiF flexible heterojunction solar cell, comprising the following steps:

[0041] 1. Clean the flexible substrate and dry it. For the above-mentioned cleaning of the flexible substrate, first cut the substrate into the required shape, wash it with detergent, rinse it with third-grade water and first-grade water successively, and then use the first-grade Deionized water, acetone, and ethanol were ultrasonically cleaned for 10 min, and finally rinsed with first-grade deionized water again, dried with high-purity nitrogen, and dried.

[0042] 2 Evaporate Al thin film on flexible substrate by thermal evaporation with vacuum coating machine.

[0043] 3 Preparation of MoO 3 solution, and was spin-coated on the flexible substrate with the Al film evaporated with a colloid machine.

[0044] Preparation of MoO by the above solution method 3 and spin-coated onto flexible substrates evaporated with Al film to for...

Embodiment 1

[0061] (1) Cleaning polyimide flexible substrate: first put the substrate into a solution containing detergent (such as Liby brand liquid detergent) and soak for 10 minutes, then repeatedly scrub and rinse with water; Sonicate in containers with deionized water, acetone, and alcohol for 10 min respectively; finally put in deionized water to rinse twice, blow dry with a nitrogen gun, and dry in an oven at 80 °C.

[0062] (2) Evaporate a layer of Al on the flexible substrate by thermal radiation heating, voltage 150V, time 10s.

[0063] (3) MoO 3 Solution preparation: 0.4 g (NH 4 ) 6 Mo 7 o 24 4H 2 O was dissolved in 10 ml deionized water, and a small amount of hydrochloric acid solution was added; the solution was heated in air at 80°C for 1 hour; the remaining solution was diluted with deionized water to a solution with a mass concentration of 1 mg / mL.

[0064] (4) In an inert gas-protected gas box, a layer of MoO with a thickness of about 10 nm was thrown on the Al film...

Embodiment 2

[0072] (1) Cleaning polyimide flexible substrate: first put the substrate into a solution containing detergent (such as Liby brand liquid detergent) and soak for 10 minutes, then repeatedly scrub and rinse with water; Sonicate in containers with deionized water, acetone, and alcohol for 10 min respectively; finally put in deionized water to rinse twice, blow dry with a nitrogen gun, and dry in an oven at 80 °C.

[0073] (2) Evaporate a layer of Al on the flexible substrate by thermal radiation heating, voltage 150V, time 20s.

[0074] (3) MoO 3 Solution preparation: 0.4 g (NH 4 ) 6 Mo 7 o 24 4H 2 O was dissolved in 10 ml of deionized water, and a small amount of hydrochloric acid solution was added; the solution was heated in air at 80°C for 1 hour; the remaining solution was diluted with deionized water to a solution with a mass ratio of 2 mg / ml.

[0075] (4) In an inert gas-protected gas box, a layer of MoO with a thickness of about 20 nm was thrown on the Al-coated su...

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Abstract

The invention discloses a MoO3 / MoS2 / LiF flexible heterojunction solar cell and a preparation method thereof. The solar cell comprises a polyimide (PI) flexible substrate, an Al back pole, a MoO3 hole transport layer, a MoS2 electron hole excitation layer, a LiF electron transport layer, a graphene transparent conductive layer and an Al gate. The MoO3 layer is prepared through a solution method at low temperature, which facilitates mass production in large area. The MoS2 is formed by in-situ vulcanization through a CVD method. The MoO3 layer is annealed to reduce interface defects between the MoO3 hole transport layer and the MoS2 layer. Interface contamination is reduced. Through the heat radiation evaporation LiF layer and the thin hole transport layer and electron transport layer, the series resistance is reduced on the one hand, and on the other hand the great flexible heterojunction solar cell is formed with the MoS2, graphene and other two-dimensional layered materials. The MoO3 / MoS2 / LiF flexible heterojunction solar cell has the advantages of low temperature preparation, simple process, low cost, high photoelectric conversion efficiency, wide application range and the like.

Description

technical field [0001] The invention relates to a flexible solar cell and a preparation method thereof, belonging to the field of flexible thin film materials and devices, and also to the field of new energy materials. Background technique [0002] In today's society, energy crisis and environmental pollution have become two major problems faced by human beings. As an ideal renewable energy source, solar energy has been valued by many countries. For solar cells, higher conversion efficiency and lower production cost are the two most critical research and development goals. At present, silicon is the most commonly used solar cell material. The solar cells prepared have high conversion efficiency and the technology is relatively mature. However, due to the high cost of preparation, it is urgent to find a new type of low-cost and high-efficiency semiconductor material and battery. [0003] Molybdenum disulfide MoS 2 It is a natural mineral with abundant reserves, low price, g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0725H01L31/18
CPCH01L31/032H01L31/0725H01L31/1864Y02E10/50Y02P70/50
Inventor 曾祥斌李寒剑徐素娥郭富城陈晓晓王文照丁佳
Owner HUAZHONG UNIV OF SCI & TECH
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