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Application of metal element-doped ZnO nano material in light-emitting diode

A technology of light-emitting diodes and nanomaterials, which is applied to electrical components, circuits, organic semiconductor devices, etc., can solve the problems of deteriorating the working efficiency of quantum dot light-emitting diodes and reducing the separation of excitons in the quantum dot light-emitting layer, so as to reduce separation and improve work efficiency. Efficiency, effect of reducing process steps

Active Publication Date: 2017-02-15
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
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  • Description
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Problems solved by technology

This phenomenon will seriously deteriorate the working efficiency of quantum dot light-emitting diodes, so it is necessary to modify the QD / ZnO interface to reduce the exciton separation of the quantum dot light-emitting layer

Method used

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  • Application of metal element-doped ZnO nano material in light-emitting diode
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  • Application of metal element-doped ZnO nano material in light-emitting diode

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preparation example Construction

[0026] The preparation process of doped ZnO material is:

[0027] (1) Put the soluble salt of the doping element and the soluble Zn salt into the solvent and mix them evenly to obtain a precursor solution. The mixing process is to raise the temperature to 20-50°C and stir magnetically for 6-10 minutes;

[0028] (2) mix alkali and ethanol solution evenly and configure to obtain ethanol alkali solution, the concentration of the configured ethanol alkali solution is 0.3~0.8mol / L;

[0029] (3) Mix the precursor solution obtained in step (1) with the ethanol alkali solution obtained in step (2), stir for 1 to 2 hours to react to obtain a mixed solution, and the volume ratio of the precursor solution to the ethanol alkali solution is 3 to 4: 1;

[0030] (4) Add acetone to the mixed solution obtained in step (3), then centrifuge to obtain a precipitate, and disperse the precipitate in a dispersion solvent (one of absolute ethanol and n-butanol) to obtain a nanoparticle ink.

[0031...

Embodiment 1

[0034] Prepare In-doped ZnO material;

[0035] Take thin film resistor as 20V sq -1 The ITO glass was used as the negative film, and the ITO glass negative film was ultrasonically treated with acetone, absolute ethanol and deionized water for 15 minutes, and then treated with ozone in the air for 5 minutes with a UV lamp. Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) was spin-coated on the film, and then baked in air at 150° C. for 15 min. Then spin-coat Poly(9-vinylcarbazole) and bake at 160°C for 30min, CdSe / ZnS quantum dots and the Ga-doped ZnO nanoparticle layer prepared above. The spin-coating rate is 2000rpm, and the spin-coating time of each layer is 60s. Both layers were baked at 70°C for 20 min after spin coating. Then put the prepared multi-layer sample into a customized high-vacuum deposition chamber (the background pressure is about 3×10-7torr), and deposit the top Ag cathode (100nm thick) to obtain the product.

Embodiment 2

[0037] Prepare Ga-doped ZnO material; the molar ratio of Ga and Zn is 2:100;

[0038] Take thin film resistor as 20V sq -1 The ITO glass was used as the negative film, and the ITO glass negative film was ultrasonically treated with acetone, absolute ethanol and deionized water for 15 minutes, and then treated with ozone in the air for 5 minutes with a UV lamp. Poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) was spin-coated on the film, and then baked in air at 160° C. for 15 minutes. Then spin-coat Poly(9-vinylcarbazole) and bake at 160°C for 30min, CdSe / ZnS quantum dots and the Ga-doped ZnO nanoparticle layer prepared above. The spin-coating rate is 2000rpm, and the spin-coating time of each layer is 60s. Both layers were baked at 70°C for 20 min after spin coating. Then put the prepared multi-layer sample into a customized high-vacuum deposition chamber (background pressure is about 3×10-7torr), and deposit the top A1 cathode (100nm thick) to obtain the...

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Abstract

The invention provides an application of a metal element-doped ZnO nano material in a light-emitting diode. The metal element-doped ZnO nano material is a Ga-doped ZnO nano material; and the molar ratio of an element Ga to an element Zn is (1-12) to 100. The metal element-doped and modified ZnO nano material is adopted as an electron transport material of a QD-LED, so that separation of excitons in quantum dots can be effectively reduced and the work efficiency of a QD-LED device is improved. According to the prepared QD-LED device, the electron transport material is prepared by doped ZnO nano ink by adopting a one-step method, so that the process steps of device preparation are greatly reduced.

Description

technical field [0001] The invention relates to the technical field of quantum dot light-emitting diodes, and more specifically relates to the application of a metal element-doped ZnO nanometer material in light-emitting diodes. Background technique [0002] Quantum dot light-emitting diode (QD-LED) has become one of the research hotspots in academia and business circles due to its good monochromaticity, color tuning with quantum dot size, and solution processing. At present, QD-LEDs constructed by solution method mainly use ZnO nanoparticles as the charge transport layer, mainly because ZnO has high carrier mobility and deep valence band position. However, ZnO, like other metal oxides, will quench the fluorescence of quantum dots at the interface in contact with the quantum dot film. This is mainly due to the separation of excitons in QDs at the QD / ZnO interface due to the lower conduction band position of ZnO. This phenomenon will seriously deteriorate the working effici...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/165H10K2102/00
Inventor 郑金桔曹盛王霖高凤梅尚明辉杨祚宝杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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