Cavity-only organic semiconductor diode device
An organic semiconductor and diode technology, applied in the field of hole-only organic semiconductor diode devices, can solve the problems of electron and hole charge mobility imbalance, device conductivity change, hole transport performance change, etc., to achieve stable current efficiency and device Effect of long life and high glass transition temperature
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Embodiment 1
[0040] Synthetic route of compound 1
[0041]
[0042]
[0043] Synthesis of Compound A
[0044] Reaction feeding: 2-bromo-9,9-spirobifluorene (5.00g, 13mmol), carbazole (1.77g, 11mmol), palladium acetate (120mg), and sodium tert-butoxide (1.30g) were added to the three-necked flask in turn, After inhaling air and nitrogen three times, add anhydrous toluene (80mL) taken in advance into the flask under nitrogen protection, and finally inject tri-tert-butylphosphine (8mL, 50% toluene solution) into the reaction solution through a syringe , The reaction temperature was 110°C and the reaction time was 15h.
[0045] Post-treatment: Spin the reaction solution to dryness, and add CH 2 Cl 2 Dissolve, and add an equal volume of water to extract three times, take the organic layer and spin dry, add a small amount of CH 2 Cl 2 Until the solid was just dissolved, methanol was added dropwise for recrystallization, and colorless transparent crystals were precipitated in the solut...
Embodiment 2
[0059] Fabrication of Hole-Only Organic Semiconductor Diode Device 1
[0060] Fabrication of Hole-Only Organic Semiconductor Diode Devices Using Organic Hole Transport Materials of the Invention
[0061] First, the transparent conductive ITO glass substrate 10 (with the anode 20 on it) is sequentially washed with detergent solution, deionized water, ethanol, acetone, and deionized water, and then treated with oxygen plasma for 30 seconds.
[0062] Then, 5 nm thick HATCN was evaporated on the ITO as the hole injection layer 30 .
[0063] Then, Compound 1 was evaporated to a thickness of 100 nm on the hole injection layer as the hole transport layer 40 .
[0064] Then, 5 nm thick TAPC was evaporated as the electron blocking layer 50 on the hole transport layer.
[0065] Finally, aluminum with a thickness of 100 nm was evaporated on the electron blocking layer as the cathode 60 of the device.
[0066] structure see Figure 5 shown.
[0067] The structural formula described i...
Embodiment 3
[0092] Fabrication of Organic Electroluminescent Devices 4
[0093] Preparation of OLEDs using the organic electronic materials of the present invention
[0094] First, the transparent conductive ITO glass substrate 10 (with the anode 20 on it) is sequentially washed with detergent solution, deionized water, ethanol, acetone, and deionized water, and then treated with oxygen plasma for 30 seconds.
[0095] Then, a 90 nm thick compound 1 was evaporated on the ITO as the hole injection layer 30 .
[0096] Then, compound D was evaporated to form a hole transport layer 40 with a thickness of 30 nm.
[0097] Then, compound B (2%) and compound C (98%) were evaporated to a thickness of 40 nm on the hole transport layer as the light emitting layer 50 .
[0098] Then, 40 nm thick BPhen was evaporated on the light emitting layer as the electron transport layer 60 .
[0099] Finally, evaporated 15nm LiQ as the electron injection layer 70 and 150nm Al as the cathode 80 of the device. ...
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