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High-conductivity interconnected electrode for display electronic devices and preparation method thereof

A technology for electronic devices and displays, which is applied in the field of new electrodes for high-conductivity interconnection of electronic devices for display and its preparation. It can solve the problems of harsh crystallization conditions of the seed layer, increased resistivity of interconnect lines, and low mechanical strength of copper. Achieve the effects of high bonding strength, low resistivity and simple preparation process

Inactive Publication Date: 2017-02-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, copper material is used as a metal interconnection, and the main difficulties are: (1) The chemical activity of Cu is weak, and it is difficult to bond with the insulating substrate, so that the bonding strength between the electrode and the substrate is poor.
(2) The problem of copper pollution, due to the diffusion of copper in silicon, the formation of deep-level acceptor impurities, which seriously degrades the dielectric properties of silicon oxide
(3) Oxidation and vulcanization of the copper interconnection surface lead to an increase in the resistivity of the interconnection line
(4) The mechanical strength of copper is low
Moreover, the growth of the seed layer requires very harsh crystallization conditions, which is difficult to control and is not conducive to large-scale and low-cost production.

Method used

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  • High-conductivity interconnected electrode for display electronic devices and preparation method thereof
  • High-conductivity interconnected electrode for display electronic devices and preparation method thereof
  • High-conductivity interconnected electrode for display electronic devices and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A method for preparing a high-conductivity interconnection electrode of an electronic device for display, comprising the following steps:

[0041] (1) Deposit the copper alloy thin film of 5nm thickness as adhesion barrier layer on the substrate with magnetron sputtering method; The material composition of copper alloy thin film comprises copper and chromium, and by weight percent, the ratio of Cr to the total amount of alloy is 0.4%;

[0042] The XRD analysis patterns of the deposited Cu-Cr alloy film are as follows: image 3 shown by image 3 It can be seen that there are many kinds of non-seed layer crystal phase structures in the copper alloy thin film;

[0043] (2) Annealing at a temperature of 100°C for 3 hours;

[0044] (3) After the annealing treatment, a pure copper film with a thickness of 5 nm is deposited on the copper alloy film by magnetron sputtering, and annealed at a temperature of 100° C. for 3 hours.

[0045] The schematic diagram of the prepared ...

Embodiment 2

[0047] A method for preparing a high-conductivity interconnection electrode of an electronic device for display, comprising the following steps:

[0048] (1) Deposit a 200nm thick copper alloy film on the substrate as an adhesion barrier by magnetron sputtering; the material composition of the deposited copper alloy film includes copper and chromium, by weight percentage, Cr accounts for the total amount of the alloy The ratio of 0.6%;

[0049] There are various lattice structures of non-seed layers in the deposited copper alloy films, see image 3 ;

[0050] (2) A pure copper film with a thickness of 1000 nm is deposited on the copper alloy film by magnetron sputtering.

[0051] The prepared conductive electrode structure is as follows figure 2 shown.

Embodiment 3

[0053] A method for preparing a high-conductivity interconnection electrode of an electronic device for display, comprising the following steps:

[0054] (1) Deposit the copper alloy thin film of 5nm thickness as adhesion barrier layer on the substrate with magnetron sputtering method; The material composition of copper alloy thin film comprises copper and chromium, and by weight percent, the ratio of Cr to the total amount of alloy is 0.4%;

[0055] There are various lattice structures of non-seed layers in the deposited copper alloy films, see image 3 ;

[0056] (2) Annealing at a temperature of 500°C for 1 hour;

[0057] (3) After the annealing treatment, a pure copper film with a thickness of 5 nm is deposited on the copper alloy film by magnetron sputtering.

[0058] The prepared conductive electrode structure is as follows figure 2 shown.

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Abstract

The invention discloses a high-conductivity interconnected electrode for display electronic devices and a preparation method thereof. The preparation method comprises the following steps: (1) depositing a copper alloy film on a substrate as an adhesion barrier layer; (2) annealing at a temperature of 100 to 500 degrees centigrade; (3) depositing a pure copper film on the copper alloy film and annealing at a temperature of 100 to 500 degrees centigrade. The conductive electrode prepared by the method has the advantages of high bonding strength, low resistivity and simple preparation process.

Description

technical field [0001] The invention relates to the technical field of microelectronic integrated circuits, in particular to a novel electrode for high-conductivity interconnection of electronic devices for display and a preparation method thereof. Background technique [0002] With the development of miniaturization of microelectronic integrated circuits, higher requirements are put forward for the performance of each component that constitutes the basic circuit of microelectronics. The electrical conduction between the electronic devices is realized through the thin film connection of the copper material. [0003] At present, copper material is used as a metal interconnection, and the main difficulties are: (1) The chemical activity of Cu is weak, and it is difficult to bond with the insulating substrate, so that the bonding strength between the electrode and the substrate is poor. (2) The problem of copper pollution, due to the diffusion of copper in silicon, forms deep-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/498
CPCH01L21/4846H01L23/49866
Inventor 姚日晖卢宽宽宁洪龙胡诗犇陶瑞强蔡炜王磊徐苗彭俊彪吴为敬
Owner SOUTH CHINA UNIV OF TECH