Method For Producing Group Iii Nitride Semiconductor Single Crystal
A nitride semiconductor and single crystal technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of unstable reproducibility of semiconductor single crystals, difficulty in obtaining uniform semiconductor single crystals, etc., and achieve high reproducibility sexual effect
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Embodiment approach 1
[0032] 1. Semiconductor single crystal
[0033] figure 1 Crystalline CR of Embodiment 1 is shown. Such as figure 1 As shown, the crystal CR has a sapphire substrate 11, a buffer layer 12, a GaN layer 13 and a single crystal CR1. The single crystal CR1 is formed of a Group III nitride semiconductor. Single crystal CR1 is obtained by removing the sapphire substrate 11 and other layers from crystal CR.
[0034] 2. Crystal growth equipment
[0035] 2-1. Structure of crystal growth equipment
[0036] figure 2 A crystal growth apparatus 1000 for producing the crystal CR of Embodiment 1 is shown. The crystal growth apparatus 1000 is used to grow a Group III nitride semiconductor single crystal on a growth substrate by a flux method of Na. Such as figure 2 As shown, the crystal growth apparatus 1000 has a gas supply pipe 1210, an exhaust pipe 1220, an insulator 1230, a reaction chamber 1240, a pressure vessel 1250, a turntable 1270, a rotating shaft 1280, a motor 1310, an e...
Embodiment approach 2
[0109] The technical solution of the present invention is based on the discovery that high-quality and homogeneous crystals. The reaction of Na and Ga is in the state of dispersion of fine particles of Ga-Na alloy. When the Ga-Na alloy becomes a liquid during temperature rise after realizing a dispersion state of fine particles of the Ga-Na alloy and raising the temperature to a growth temperature at which a Group III nitride semiconductor single crystal is grown, flattening is obtained high-quality crystals. In Embodiment 1, the state of dispersion of fine particles of Ga—Na alloy is detected using X-rays or in differential thermal analysis.
[0110] Therefore, if the dispersion state of fine particles of Ga-Na alloy is realized before crystal growth, the object of the technical solution of the present invention can be achieved. Figure 5 and 6 The relationship between the heating curve shown in and the state of the dispersion of the Ga-Na alloy probed using X-rays can be...
Embodiment approach 3
[0119] Embodiments 1 and 2 refer to methods for producing a Group III nitride semiconductor single crystal. Embodiment 3 refers to a semiconductor device using the Group III nitride semiconductor single crystal as a self-supporting substrate.
[0120] 1. Vertical semiconductor device
[0121] Figure 11 A power device 100 according to embodiment 2 is shown. The power device 100 is a vertical semiconductor device. The power device 100 has as Figure 11 Drain electrode D1 shown at the bottom, and as Figure 11 Gate electrode G1 and source electrode S1 shown at the top.
[0122] The power device 100 has a plurality of Group III nitride semiconductor layers. Such as Figure 11 As shown, the power device 100 has a substrate 110 , an n-type layer 120 , a p-type layer 130 , an n-type layer 140 and an insulating film 150 in addition to the aforementioned electrodes. n-type layer 120 has n + GaN layer 121 and n-GaN layer 122 are sequentially disposed on substrate 110 . The so...
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Abstract
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