A kind of infrared detector and its manufacturing method
A technology of infrared detectors and substrates, applied in the field of microelectronics, can solve the problems of detector detection targets, range and accuracy limitations, and achieve the effect of improving absorption rate and device performance, and comprehensive and accurate detection information
Active Publication Date: 2019-02-05
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0005] At present, the uncooled infrared imaging band is mainly concentrated in the long-wave infrared band (8 μm ~ 14 μm), while there are relatively few products with imaging bands in the mid-wave infrared band (3 μm ~ 5 μm), so the detection target, range and accuracy of the detector are greatly affected. big limit
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[0094]On the basis of the above embodiments, a specific embodiment of the present application provides a method for preparing an infrared detector, such as Figure 8 shown, including:
[0095] S201, plating a gold film on the substrate and patterning to form a reflective layer and a readout circuit electrode;
[0096] S202, forming a sacrificial layer on the substrate on which the reflective layer and readout circuit electrodes are formed;
[0097] S203, forming a via hole on the sacrificial layer;
[0098] S204, forming a supporting layer on the sacrificial layer;
[0099] S205, forming a thermosensitive layer on the support layer and patterning it;
[0100] S206, forming a passivation layer on the heat sensitive layer;
[0101] S207, etching the readout circuit electrode contact hole and the heat sensitive layer contact hole;
[0102] S208, forming and patterning a metal contact hole electrode layer on the passivation layer where the circuit electrode contact hole and t...
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Abstract
The invention discloses an infrared detector and a manufacturing method thereof, wherein the infrared detector comprises a substrate, a reflection part, a micro-bridge and a graphical film; the reflection part is arranged on the substrate; the micro-bridge is arranged on the substrate in a suspension manner; a cavity formed by the substrate and the micro-bridge in an encircling manner forms an optical resonant cavity; the micro-bridge is provided with a thermo-sensitive layer; the graphical film is arranged on the thermo-sensitive layer; and infrared light is incident to the substrate from the graphical film. On the basis of a surface plasma enhanced absorption principle, the infrared detector can simultaneously realize detection for medium wave and long wave of infrared light by utilizing the periodic graphical film (such as a metal film); due to the combined action of the thermo-sensitive layer, the optical resonant cavity and the surface plasma enhanced effect, the absorption rate simultaneously for the medium wave and the long wave of the infrared light and device performances of the infrared detector are increased; and thus, relatively comprehensive and accurate detection information is provided for users.
Description
technical field [0001] The present application relates to the technical field of microelectronics, and more specifically, relates to an infrared detector and a manufacturing method thereof. Background technique [0002] The infrared imaging system is a system that relies on the radiation of the target and the background to generate a scene image. It can work 24 hours a day, and can detect hidden thermal targets through camouflage. The infrared detector is the core component of the infrared imaging system, which can convert the incident infrared light signal into an electrical signal and output it according to the photoelectric effect and pyroelectric effect. [0003] There are many types of infrared detectors currently used. Among them, infrared detectors made by microbolometric technology, which combine Micro-Electro-Mechanical System (MEMS) technology and device structure, have good development prospects. [0004] Because in the atmospheric environment, the infrared radia...
Claims
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IPC IPC(8): B81B1/00B81C1/00G01J5/20
CPCB81B1/002B81C1/00047G01J5/20G01J2005/0077
Inventor 张紫辰王晓峰潘岭峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI