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Semiconductor device and manufacturing method therefor

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high work function, low work function, poor blocking ability, etc., and achieve the effect of improving performance and yield

Active Publication Date: 2017-04-05
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ti-rich TiN is a metal film with a lower work function (about 4.8), however its barrier ability is not as good as that of nitrogen-rich TiN
N-rich TiN has better blocking ability, but its work function is higher (about 5)

Method used

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  • Semiconductor device and manufacturing method therefor
  • Semiconductor device and manufacturing method therefor
  • Semiconductor device and manufacturing method therefor

Examples

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Embodiment 1

[0033] Below, refer to Figure 1A-1B , figure 2 A method for manufacturing a semiconductor device proposed by an embodiment of the present invention will be described.

[0034] Exemplarily, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes the following steps:

[0035] First, step S201 is performed to provide a semiconductor substrate, the semiconductor substrate includes a region where a metal gate structure is to be formed.

[0036] Specifically, the semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) , silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0037] Optionally, a doped region and / or an isolation structure may be formed in the semiconductor substrate, and the isolation structure is a shallow trench isolation (STI) structure or a local oxid...

Embodiment 2

[0062] This embodiment also provides a semiconductor device obtained by using the manufacturing method in the first embodiment.

[0063] The semiconductor device of the present invention comprises: a semiconductor substrate, and a metal gate structure located on the surface of the semiconductor substrate, the metal gate structure comprising a high-k dielectric layer, a cover layer, a work function layer, a barrier layer stacked in sequence layer and a metal gate electrode layer, wherein the covering layer is gradually transformed from a non-metal-rich film layer at the bottom layer to a metal-rich film layer at the top layer.

[0064] Specifically, the semiconductor substrate may be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI) , silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0065] Optionally, a doped region and / or an isolation struc...

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Abstract

The invention provides a semiconductor device and a manufacturing method therefor, and relates to the technical field of semiconductors. The method comprises the steps: providing a semiconductor substrate, wherein the semiconductor substrate comprises a preset region where a metal grid structure is formed; sequentially depositing a high-k dielectric layer, a covering layer, a function layer, a blocking layer and a metal grid layer on the surface of the semiconductor substrate in the preset metal grid structure region, wherein the covering layer is gradually changed into a top metal-rich film layer from a bottom non-metal-rich film layer. According to the invention, the high-k dielectric layer is provided with the covering layer which is gradually changed into a Ti-rich TiN layer from a bottom N-rich TiN layer, and there is good power between the covering layer and the high-k dielectric layer. Meanwhile, the method also can modulate a work function of the whole metal grid electrode, and can improve the performance and yield of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of next-generation integrated circuits, a high-k-metal gate process is usually used for the fabrication of complementary metal-oxide-semiconductor (CMOS) gates. Generally, the metal gate structure includes a bottom-up high-k dielectric layer, a capping layer, a work function layer, a barrier layer, and a metal gate electrode layer. [0003] Below the 28nm technology node, the physical vapor deposition TiN layer is often used as the cap layer and work function barrier layer of the high-k dielectric layer. The Ti:N ratio of the TiN film layer has a significant impact on the performance of the film, such as the impact on work function and diffusion barrier ability. Ti-rich TiN is a metal thin film, which has a lower work function (about 4.8), however, its ba...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L29/49
CPCH01L29/4966H01L21/28088
Inventor 徐建华邓浩
Owner SEMICON MFG INT (SHANGHAI) CORP
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