Molecular beam epitaxy under strong vector magnetic field and its in-situ characterization device

Abstract

A device for molecular beam epitaxy and its in-situ characterization under a strong vector magnetic field, relating to molecular beam epitaxy and its in-situ characterization. Provides molecular beam epitaxial growth with adjustable angle between the sample growth plane and the magnetic field under ultra-high vacuum strong magnetic field, and in-situ characterization equipment mainly based on Hall effect and magnetoresistance testing. The device is mainly composed of a compact inverted T-shaped ultra-high vacuum growth and characterization chamber and a strong magnet with a small room temperature chamber. Among them, the inverted T-shaped vacuum chamber part placed in the room temperature cavity of the strong magnet includes a compact epitaxial growth sample stage, an adjustable angle between the magnetic field and the sample stage, and an in-situ characterization device; the part placed under the strong magnet includes the evaporation source, plasma The molecular beam source components such as the volume source and the vacuum pumping system make use of the long free path of the molecular beam in ultra-high vacuum, so that the multi-beam source can be moved out of the strong magnetic field cavity. It effectively overcomes the technical difficulties of the small size of the strong magnetic field cavity and the many components of the growth test system, and realizes the molecular beam epitaxy growth and in-situ characterization under the strong magnetic field.

Description

technical field [0001] The invention relates to molecular beam epitaxy and its in-situ characterization, in particular to a molecular beam epitaxy and its in-situ characterization device under a vector strong magnetic field. Background technique [0002] With the rapid development of information science, people have put forward higher requirements for parameters such as operating speed, data storage density and power consumption of electronic components. Existing electronic components represented by integrated circuits or VLSIs only manipulate the degree of freedom of electronic charge, while ignoring the other basic quantum property of electronic spin, which leads to its size, integration, etc. All have basically reached the physical limit determined by the theory. The quantum control of electron spin is beneficial to fast data processing, reducing power consumption, improving integration, etc., and has become an emerging important branch of semiconductor physics. [0003...

AI Technical Summary

Problems solved by technology

[0004] However, the size of the room temperature cavity of existing strong magnets is small (usually the inner diameter is less than 10 cm), and to realize the fine growth of magnetic thin film materials (multiple evaporation sources or ion sources) and in-situ characterization at the same time, it is necessary to install in the cavity Multiple components, multiple system functions and complex structure

Images