TiO2-based nano heterojunction compound light anode and preparation method thereof

A heterojunction and composite light technology, applied in the field of solar cells, can solve the problems of restricting practical application, low utilization rate of visible light, low quantum efficiency, etc., and achieve the effect of expanding absorption band edge, suppressing recombination, and high visible light absorption efficiency.

Active Publication Date: 2017-05-10
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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  • Application Information

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Problems solved by technology

[0003] However, TiO 2 The bandgap width is wide, about 3.2eV, so that only less than 5% of the visible light in the ultraviolet region can be effectively absorbed and utilized, resulting in TiO 2 Nanotube arrays have very low utilization of visible light; moreover, in TiO 2 In photoelectrochemical applications, photogenerated electrons and holes are easy to recombine quickly, resulting in very low quantum efficiency. The above two problems seriously restrict TiO 2 Practical application in the field of solar cell technology

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  • TiO2-based nano heterojunction compound light anode and preparation method thereof

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[0036] The embodiment of the present invention also discloses a TiO-based 2 The preparation method of the nano-heterojunction composite photoanode, comprises the following steps:

[0037] S1: Provide a transparent conductive substrate.

[0038] In the embodiment of the present invention, the transparent conductive substrate is AZO transparent conductive glass. The AZO transparent conductive substrate is cleaned and dried for later use.

[0039] S2: preparing a titanium alloy thin film on the transparent conductive substrate.

[0040] In the embodiment of the present invention, a titanium alloy thin film is prepared on the transparent conductive substrate by using a magnetron sputtering method. Specifically, the magnetron sputtering parameters are: radio frequency magnetron sputtering, sputtering power 50-150W, sputtering current 0.4-0.8A, sputtering time 0.3-3h, sputtering atmosphere is argon, air pressure It is 0.4-0.8Pa.

[0041] In the embodiment of the present inventi...

Embodiment 1

[0061] Based on TiO in embodiment 1 2 The preparation method of the nano-heterojunction composite photoanode, comprises the following steps:

[0062] S1: A sheet of AZO transparent conductive glass is provided, and the sheet of AZO transparent conductive glass is cleaned and dried for later use.

[0063] S2: Prepare a copper-titanium alloy thin film on the transparent conductive substrate by magnetron sputtering. The magnetron sputtering parameters are as follows: radio frequency magnetron sputtering, sputtering power of 80W, sputtering current of 0.6A, sputtering time of 2h, sputtering atmosphere of argon, and pressure of 0.6Pa.

[0064] S3: Anodize the transparent conductive substrate with the copper-titanium alloy film by anodic oxidation method, the composition of the anodized organic solvent electrolyte is: ethylene glycol solvent and NH with a concentration of 0.2mol / L 4 F, concentration is the lactic acid of 0.15mol / L and the volume fraction is the deionized water of ...

Embodiment 2

[0068] Based on TiO in embodiment 2 2 The preparation method of the nano-heterojunction composite photoanode is the same as that in Example 1 based on TiO 2 The preparation method of the nano-heterojunction composite photoanode is roughly the same, the difference is that in the step S4 in the embodiment 2, a hydrogen atmosphere is used to treat the TiO 2 The precursor of the nanotube array thin film is annealed and crystallized, and the rest of the steps are the same as in Example 1.

[0069] Embodiment 2 obtains based on TiO 2 Nano-heterojunction composite photoanode, in which TiO 2 Nanotube array films have Cu-doped phases and oxygen vacancies.

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Abstract

The invention discloses a TiO2-based nano heterojunction compound light anode. The TiO2-based nano heterojunction compound light anode comprises a transparent conductive substrate, a TiO2 nanotube array film with a metal doping phase and a non-metal doping phase, and semiconductor nano-particles, wherein the TiO2 nanotube array film is grown on the surface of the transparent conductive substrate; and the semiconductor nao-particles are loaded on the surface of the TiO2 nanotube array film. The invention also discloses a preparation method of the TiO2-based nano heterojunction compound light anode. According to the TiO2-based nano heterojunction compound light anode disclosed by the invention, the absorption band edge of TiO2 is effectively expanded, and the recombination of photoproduction electrons and holes is inhibited, so that the TiO2-based nano heterojunction compound light anode has obviously enhanced visible-light response performance and efficient electron transfer efficiency, namely has relatively high visible-light absorption efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a TiO-based solar cell with high visible light absorption efficiency 2 Nano-heterojunction composite photoanode and its preparation method. Background technique [0002] As an n-type semiconductor, TiO 2 Due to the advantages of large specific surface area, high degree of order, simple preparation, and low cost, nanotube arrays have broad application prospects in the fields of photocatalysis, solar cells, hydrogen production by photolysis of water, and sensors. [0003] However, TiO 2 The bandgap width is wide, about 3.2eV, so that only less than 5% of the visible light in the ultraviolet region can be effectively absorbed and utilized, resulting in TiO 2 Nanotube arrays have very low utilization of visible light; moreover, in TiO 2 In photoelectrochemical applications, photogenerated electrons and holes are easy to recombine quickly, resulting in very low quantum efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/00H01G9/20
CPCH01G9/0029H01G9/145H01G9/20H01G9/2022H01G9/2031Y02E10/542
Inventor 马清占旭陈建军檀满林张维丽
Owner RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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