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Preparation method for silicon intermediate infrared antireflection microstructure

A microstructure and anti-reflection technology, applied in the field of micro-nano processing of silicon, can solve problems such as unfavorable preparation, high equipment and cost, and achieve the effects of controllable etching depth, low cost and convenient processing.

Active Publication Date: 2017-05-10
NANJING UNIV
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  • Application Information

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Problems solved by technology

In the existing micro-nano processing, the reactive ion deep silicon etching can also have a faster reaction rate, but the high equipment and cost are not conducive to the preparation of large areas.

Method used

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  • Preparation method for silicon intermediate infrared antireflection microstructure
  • Preparation method for silicon intermediate infrared antireflection microstructure

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Embodiment Construction

[0020] The method for preparing the anti-reflection microstructure of mid-infrared silicon of the present invention will be described in detail below with reference to the accompanying drawings.

[0021] This embodiment relates to a method for preparing a mid-infrared anti-reflection micro-column array, and the specific steps are as follows:

[0022] (1) First of all, take a 100-type silicon wafer of 1cmx1cm, and clean the surface of the silicon wafer with an appropriate amount of 40% hydrofluoric acid, then put it in an acetone solution for ultrasonication, and finally clean it with deionized water, and then use nitrogen gas to clean it. Just blow dry the gun.

[0023] (2) Carry out homogenization treatment on the cleaned silicon wafer. The photoresist here is SU8 photoresist, and the silicon wafer is fixed on a rotary homogenizer. Here, the homogenizer is homogenized at a rate of 4000 rpm 50 seconds or more.

[0024] (3) Place the homogenized silicon wafer on a hot stage f...

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Abstract

The invention provides a preparation method for a silicon intermediate infrared antireflection microstructure. The method comprises the following steps of first, designing a required etching pattern through drawing software; then, uniformly coating the cleaned silicon surface with a layer of ultraviolet photoresist; transferring a pattern designed by the drawing software to a silicon wafer coated with the photoresist by development of a developing solution through ultraviolet exposure, at the moment, coating the silicon wafer with a layer of gold film through an electronic beam evaporation method; and based on a wet etching principle, performing etching depth control by adjusting etching time and components of an etching liquid to obtain a height-controllable high-depth-to-width-ratio silicon micron array structure. The preparation method has the advantages of low cost, convenient processing, large and controllable etching depth and the like, and has a wide application prospect in the field of silicon intermediate infrared antireflection.

Description

technical field [0001] The invention belongs to the field of micro-nano processing of silicon, and in particular relates to a method for preparing a mid-infrared anti-reflection microstructure of silicon. Background technique [0002] In recent years, with the continuous development of silicon-based optoelectronics technology, the wavelength range of silicon-based optoelectronics applications has gradually expanded from the traditional communication band to mid-infrared and far-infrared bands. According to the transmission conditions of infrared radiation in the atmosphere, the infrared spectrum is usually divided into far infrared (NIR), mid infrared (MIR) and far infrared (FIR). Among them, the mid-infrared spectrum (2.5um-25um) is widely used in sensing applications such as environmental monitoring and remote sensing technology due to its high band sensitivity and strong fundamental frequency vibration. [0003] Micro-nano processing technology is a technology derived fr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0232H01L31/0236H01L21/306H01L21/308
CPCH01L31/02327H01L31/02363H01L31/1804H01L21/30608H01L21/3081Y02P70/50
Inventor 吕春雨边捷
Owner NANJING UNIV
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