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Alumina substrate

A technology of alumina and substrates, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve problems such as rising costs, reduced use value, complicated procedures, etc., and achieve the effect of reducing warpage

Inactive Publication Date: 2017-05-10
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method can be expected to improve the quality, but there are disadvantages that the process becomes complicated, the cost increases, and the industrial utility value decreases.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0057]

[0058] The c-plane sapphire substrate was cut into a size of 10 mm square and used as a substrate. The MOD solution containing Y as a rare earth element at a concentration of 2 wt% was applied by spin coating at 3000 rpm for 20 seconds. After coating, it was dried on a hot plate at 150°C for 10 minutes, and then heat-treated in the air at a temperature of 600°C for 2 hours. After the heat treatment, it was placed on a 100 mm square alumina plate 13, and 5 mg of powdered carbon 11 was further disposed at one place in the lateral direction of the substrate. As the substantially closed sagger 12, a cylindrical alumina crucible having a diameter of 30 mm and a height of 30 mm was used. By covering the substrate and powdered carbon with the alumina crucible in reverse, a substantially airtight state can be achieved. The nitriding furnace uses a resistance heating electric furnace that uses carbon as a heater. For gas replacement, before heating, the gas was degassed to 0...

Embodiment 2

[0062] The c-plane sapphire substrate is cut into 10 mm squares to prepare a substrate for nitriding. Europium nitrate hydrate was dissolved in ethanol, and after adjusting the concentration to 2 wt%, a few surfactants were added to prepare a coating solution. Spin coating was performed at 3000 rpm for 20 seconds. After drying on a hot plate at 250°C for 10 minutes, heat treatment was performed in the air at 1000°C for 2 hours. The nitriding treatment was carried out in the same manner as in Example 1. But the processing temperature is 1650°C.

[0063] In XRD measurement, Al can be seen in the range of 2θ from 15deg to 45deg 5 C 3 N (002n) (here, n = 2, 3, 4, 5) diffraction lines, AlN (002) diffraction lines, and sapphire (006) diffraction lines, in addition, Al 5 C 3 The intensity ratio of N(006) / sapphire (006) is 0.2%, and the intensity ratio of AlN(002) / sapphire (006) is 25%. The radius of curvature is 30m.

[0064] In addition, FIB processing was performed on the cross sect...

Embodiment 3

[0066] An alumina substrate subjected to the same treatment as in Example 1 was prepared, and the same treatment as in Example 1 was repeated again. However, in this process, powdery carbon is not placed, and only the substrate is covered with an alumina crucible, and the nitriding process is performed.

[0067] The XRD measurement is the same as in Example 1. Al can be seen in the range of 2θ from 15deg to 45deg 5 C 3 N (002n) (here, n = 2, 3, 4, 5) diffraction lines, AlN (002) diffraction lines and sapphire (006) diffraction lines, in addition, you can also see Al 5 C 3 The intensity ratio of N(006) / sapphire (006) becomes 6.5%, the intensity ratio of AlN(002) / sapphire (006) becomes 7.1%, and Al 5 C 3 The N phase increases, and the AlN phase decreases. The radius of curvature is increased to 128m compared with Example 1.

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Abstract

Provided is an alumina substrate whereby, when an AlN crystal or the like is created on the alumina substrate, a higher-quality crystal can be created, and an AlN layer on the alumina substrate has reduced warpage. In the present invention, an AlN layer including a carbon-containing phase is formed on a surface of the alumina substrate, and stress on the AlN layer is thereby alleviated, and warpage can be reduced.

Description

Technical field [0001] The present invention relates to an aluminum oxide substrate in which an aluminum nitride layer is provided on the main surface. Background technique [0002] In the present invention, α-alumina (Al 2 O 3 ) Single crystal (hereinafter referred to as sapphire) made of a substrate is called a sapphire substrate, will be made of polycrystalline aluminum oxide (Al 2 O 3 ) The manufactured substrate is called a polycrystalline alumina substrate. The sapphire substrate and the polycrystalline alumina substrate are collectively referred to as an alumina substrate. [0003] A crystalline layer composed of group III nitride semiconductors such as gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (AlGaN), etc. is used as a light-emitting diode and laser that emit short-wavelength light in the blue to ultraviolet region The functional layers of light-emitting devices such as diodes and power transistors are attracting attention. In addition, AlN ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B19/12C30B25/18
CPCH01L21/02439H01L21/02458H01L21/02502C30B25/183C30B25/186C30B1/02C30B1/10C30B29/403H01L21/0242H01L21/02488H01L21/0254C30B29/38C30B29/20H01L21/02491H01L21/02614H01L21/02658C30B19/12C30B25/18
Inventor 山泽和人大井户敦川崎克己
Owner TDK CORPARATION