Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Guide mode processing method for flaky sapphire

A processing method, sapphire technology, applied in chemical instruments and methods, self-melting liquid pulling method, single crystal growth, etc., can solve problems such as poor quality of flaky crystals, reduce the probability of bubble generation, improve crystal quality, The effect of reducing the existence of raw material voids

Inactive Publication Date: 2017-05-17
NINGXIA PROCRYSTAL TECH CO LTD
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is just to: aim at the above-mentioned problem existing at present, provide a kind of guided-mode processing method of flake sapphire, to solve the deficiencies and defects of poor quality of flake crystal produced by the guided-mode method existing in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Guide mode processing method for flaky sapphire
  • Guide mode processing method for flaky sapphire
  • Guide mode processing method for flaky sapphire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Example 1, such as Figure 1-3 Shown:

[0035] A kind of guided mode processing method of sheet-shaped sapphire, comprises the steps:

[0036] (1) Raw material processing: The raw material is first ultrasonically cleaned with acetone for 20 minutes, then ultrasonically cleaned with absolute ethanol for 10 minutes, and then ultrasonically cleaned with deionized water for 10 minutes to clean the raw material; Dry in an oven at 120°C for 1h to 1.5h, then soak the raw materials in concentrated hydrochloric acid with a mass fraction of 36%-38% for 26h to 30h, place them in a clean water pool to rinse until neutral, and then put them into a quartz crucible Dry for 1h~2h;

[0037] (2) Cleaning of the furnace body: before processing the flake sapphire with the guide mold, the furnace body shall be strictly inspected first to know whether there are foreign objects or sundries inside the furnace body by means of inspection, and the sundries inside the furnace body shall be clea...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
refractive indexaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of sapphire processing, in particular to a guide mode processing method for flaky sapphire. The guide mode processing method mainly comprises the following steps: (1) treating raw materials; (2) cleaning a furnace body; (3) filling the raw materials; (4) vacuuming the furnace body; (5) performing high-temperature crystal guidance; (6) performing necking down; (7) performing shoulder expansion; (8) performing equal-diameter growth; and (9) performing annulling cooling, and the like. On one hand, impurities in the crystal growth process can be reduced, crystal can be prevented from being polluted, and the purity of the crystal can be improved; and on the other hand, bubbles generated in the melting process of the crystal can be reduced, raw material gaps can be reduced as the raw materials are compacted and filled according to a certain ratio, the bubble generation probability in crystal growth can be reduced, and the crystal quality can be improved; furthermore, through procedures of high-temperature crystal guidance, necking down, shoulder expansion, equal-diameter growth and annealing cooling, cracks, displacement, glass fragment strips and genetic defects can be reduced in the crystal growth process, and thus the crystal quality can be improved.

Description

technical field [0001] The invention relates to the technical field of sapphire processing, in particular to a guided-mode processing method for flaky sapphire. Background technique [0002] The English name of sapphire is Sapphire, which comes from the Latin Spphins, which means blue; it belongs to the corundum group of minerals and has a trigonal crystal system. In the gem world, all kinds of gem-quality corundum other than ruby ​​are called sapphires. Sapphires and rubies, emeralds, bodhi tourmalines, and tanzanites all belong to the genus of colored gemstones. [0003] Because corundum contains trace elements such as iron (Fe) and titanium (Ti), it presents blue, sky blue, light blue and other colors, among which bright sky blue is the best. The mineral name of sapphire is corundum, which belongs to the corundum group of minerals. In fact, gem-grade corundum in nature is called sapphire except for the red one called ruby, and other colors such as blue, light blue, gre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/34C30B29/20C30B33/02
CPCC30B15/34C30B29/20C30B33/02
Inventor 胡明理李业林杨博王春刚李伟国
Owner NINGXIA PROCRYSTAL TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com