Fabrication method of mask, mask and evaporation system

A mask and mask pattern technology is applied in the field of mask, evaporation system, and mask preparation to achieve the effect of improving welding success rate, improving flatness and good flatness

Inactive Publication Date: 2017-05-17
BOE TECH GRP CO LTD +1
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for preparing a mask, a mask and an evaporation system for the above-mentioned deficiencies in the prior art. The problem of the flatness of the soldering area of ​​the film mask pattern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of mask, mask and evaporation system
  • Fabrication method of mask, mask and evaporation system
  • Fabrication method of mask, mask and evaporation system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] This embodiment provides a method for preparing a mask, which can effectively alleviate the flatness of the frame and the mask pattern in the welding area during the process of preparing the mask, and improve the quality of the mask.

[0036] A method for preparing a mask. The mask includes a mask including a frame with an opening in the middle region and a mask pattern arranged above the frame. The preparation method includes the steps of:

[0037] During the forming process of the frame, a first resistance force is applied to the frame;

[0038] Welding the mask pattern to the frame at least partially in the area covering its internal opening, applying a second resisting force to the frame during the welding process;

[0039] Wherein: the first resistance force and the second resistance force have the same direction and are equal in magnitude.

[0040] Among them, the structure of frame 1 is as follows Figure 1A and Figure 1B As shown, the cross section of the fra...

Embodiment 2

[0064] This embodiment provides a method for preparing a mask, which can effectively alleviate the flatness of the frame and the mask pattern in the welding area during the process of preparing the mask, and improve the quality of the mask.

[0065] The difference between the preparation method of the mask plate of this embodiment and the embodiment 1 is that the mask pattern 2 welded above the welding area 10 of the frame 1 is different, and in the molding process of the frame 1 (also taking the grinding process as an example) The amount, magnitude and direction of the resisting force exerted by frame 1 are different.

[0066] For pure frame 1, Figure 7A A schematic diagram showing the resistance force exerted on the frame 1 during the polishing process in the preparation method of the mask plate: when the surface flatness of the frame 1 is polished, the frame 1 is improved from the non-resistance force of the prior art to the first When the welding mask pattern 2 is applie...

Embodiment 3

[0075] This embodiment provides an evaporation system, which includes the mask plate prepared in Embodiment 1 or Embodiment 2, and the evaporation system can obtain a higher pattern precision for mask preparation.

[0076] In this evaporation system, the evaporation source comes from the bottom, and the mask pattern is fixed on the frame and applied to the evaporation system. The mask plate blocks or allows the evaporation material molecules below, so that the substrate above it Prepare to form a predetermined pattern.

[0077] Due to the high flatness of the mask plate used, the pattern precision of the substrate prepared and formed by the evaporation system is high, showing a high yield rate of finished products.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of display, in particular to a fabrication method of a mask, the mask and an evaporation system. The mask comprises a frame and an open mask, wherein an opening is formed in an intermediate region of the frame, and the open mask is arranged above the frame. The fabrication method of the mask comprises the steps of applying a first counter force onto the frame during the frame formation process; and welding the open mask in a region at least covering the opening of the frame, and applying a second counter force onto the frame during the welding process, wherein the first counter force and the second counter force are same in direction and are equal in size. According to the fabrication method of the mask, the counter forces are applied onto the frame during the frame formation process, the counter forces are applied after the open mask is welded above the frame during the welding process, thus, an upper surface of the frame is better in flatness, the welding success rate can be effectively improved, and the flat state of the mask is improved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a method for preparing a mask, a mask and an evaporation system. Background technique [0002] With the development of science and technology, flat panel display devices have been greatly developed. LCD (Liquid Crystal Display, liquid crystal display for short) and OLED (Organic Light-Emitting Diode, organic light-emitting diode for short) displays are currently the most widely used. [0003] In the preparation process of OLED, a fine metal mask (Fine Metal Mask, referred to as FMM) is generally used, and the material forming the OLED is evaporated to the substrate (such as a low-temperature polysilicon LTPS backplane, LowTemperature Poly Silicon) above, using the pattern of FMM, the red, green and blue organic substances are evaporated to the specified positions to complete the preparation of OLED. In high-resolution display products, due to the small size of the O...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F1/68C23C14/04H01L51/56
CPCC23C14/04G03F1/00G03F1/68H10K71/00C23C14/042H10K59/12H10K71/166G03F1/38B23K9/00
Inventor 林治明王震
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products