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Preparation method of transparent thermoelectric module
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A thermoelectric module, transparent technology, applied in the manufacture/processing of thermoelectric devices, ion implantation plating, coating, etc., to achieve the effects of increasing output power, reducing manufacturing costs, and reducing space
Inactive Publication Date: 2017-05-31
KUNMING UNIV OF SCI & TECH
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[0005] There is no report on the transparent thermoelectric module or its preparation process
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Embodiment 1
[0034] A kind of preparation method of transparent thermoelectric module, see appendix Figure 1-7 , including the following steps:
[0035] (1) Deposition of P-type transparent thermoelectric arms: using pulsed laser deposition technology, KrF excimerlaserwavelength 248nm, laser pulse width 28ns, laser energy 250mJ, laser frequency 3Hz, background vacuum 1×10 -3 Pa, the growth temperature is 700°C, the growth flow oxygen pressure is 0.5Pa as the process conditions, and the P-CuCr 0.99 Mg 0.01 o 2 Ceramic as the target material, polished Al on both sides 2 o 3 (0001) Deposit P-CuCr on one of the surfaces of the single crystal substrate 1 0.99 Mg 0.01 o 2 Thin film 2, during the deposition process, use nickel mask plate I4 to block the surface of the substrate to obtain a P-type transparent thermoelectric arm array with a thickness of 100nm;
[0036] (2) N-type transparent thermoelectric arm deposition: the double-sided polished Al in step (1) 2 o 3 (0001) The singl...
Embodiment 2
[0045] A kind of preparation method of transparent thermoelectric module, see appendix Figure 1-7 , including the following steps:
[0046] (1) Deposition of P-type transparent thermoelectric arms: using pulsed laser deposition technology, KrF excimer laser wavelength 248nm, laser pulse width 28ns, laser energy 300mJ, laser frequency 4Hz, background vacuum 1×10 -4 Pa, the growth temperature is 730°C, the growth flow oxygen pressure is 1Pa as the process conditions, and the P-CuCr 0.95 Mg 0.05 o 2 Ceramic as the target material, polished Al on both sides 2 o 3 (0001) Deposit P-CuCr on one of the surfaces of the single crystal substrate 1 0.95 Mg 0.05 o 2 Thin film 2, during the deposition process, use nickel mask plate I4 to block the surface of the substrate to obtain a P-type transparent thermoelectric arm array with a thickness of 200nm;
[0047] (2) N-type transparent thermoelectric arm deposition: the double-sided polished Al in step (1) 2 o 3 (0001) The single ...
Embodiment 3
[0056] A kind of preparation method of transparent thermoelectric module, see appendix Figure 1-7 , including the following steps:
[0057] (1) Deposition of P-type transparent thermoelectric arms: using pulsed laser deposition technology, KrF excimer laser wavelength 248nm, laser pulse width 28ns, laser energy 350mJ, laser frequency 5Hz, background vacuum 1×10 -4 Pa, the growth temperature is 760°C, the growth flow oxygen pressure is 1.5Pa as the process conditions, and the P-CuCr 0.92 Mg 0.08 o 2 Ceramic as the target material, polished Al on both sides 2 o 3 Depositing P-CuCr on the surface of (0001) single crystal substrate 1 0.92 Mg 0.08 o 2 Thin film 2, during the deposition process, use nickel mask plate I4 to block the surface of the substrate to obtain a P-type transparent thermoelectric arm array with a thickness of 300nm;
[0058] (2) N-type transparent thermoelectric arm deposition: the double-sided polished Al in step (1) 2 o 3 (0001) The single crystal...
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Abstract
The invention discloses a preparation method of a transparent thermoelectric module, and belongs to the field of functional materials and devices. The method comprises the steps of firstly depositing a P-CuCr<1-x>Mg<x>O<2> thin film on one surface of a double-sided polished Al2O3 (0001) single crystal substrate by adopting pulsed laser deposition and shielding the surface of the substrate by using a nickelmask I in the deposition process; turning over the double-sided polished Al2O3 (0001) single crystal substrate at 180 degrees, keeping the position of the nickelmask I invariable and depositing an N-Zn<1-y>Al<y>O thin film on the other surface of the single crystal substrate by adopting pulsed laser deposition; and finally preparing gold electrodes at two sides of the edge of the single crystal substrate by adopting ionsputtering and shielding two sides of the edge of the substrate by using a nickelmask II in the deposition process. The prepared transparent thermoelectric module is in X-shaped cross distribution between the P-CuCr<1-x>Mg<x>O<2> thin film and the N-Zn<1-y>Al<y>O thin film, and the P-type thin film and the N-type thin film are sequentially connected by the gold electrodes to form two series channels. The output power per unit area of the transparent thermoelectric module is increased in comparison with that of an existing thin-film thermoelectric module; the dosage of materials for the substrate and the electrodes is reduced; the transparent thermoelectric module is high in transmittance on a visible light band and is transparent through visual observation.
Description
technical field [0001] The invention discloses a preparation method of a transparent thermoelectric module, which belongs to the field of functional materials and devices. Background technique [0002] With the rapid development of society and industrialization, the energy crisis and environmental pollution problems are becoming more and more serious, and the development of renewable energy and clean energy is becoming increasingly urgent. The thermoelectric module can realize the direct conversion of temperature difference and direct current, and has the advantages of no mechanical parts, no noise, no pollution, etc. It has broad application prospects in the fields of industrial waste heat utilization, automobile exhaust waste heat power generation, and wearable devices. [0003] At present, most of the thermoelectric modules on the market are composed of traditional alloy blocks to form a π-shaped thermoelectric arm array, and the thermoelectric arms are electrically conne...
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