Broadband monolithic integrated low noise amplifier

A low-noise amplifier, monolithic integration technology, applied in the direction of amplifiers, radio frequency amplifiers, amplifier types, etc., can solve the problems of increased noise, narrow frequency band of low-noise amplifiers, etc., and achieve the effects of reduced design area, high gain, and simple structure

Active Publication Date: 2017-06-13
BEIJING MXTRONICS CORP +1
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Problems solved by technology

The existing low-noise amplifier has a narrow frequency band. According to the existing low-noise amplifier design method, if the bandwidth is expanded, the noise will be increased. How to achieve low noise and high gain in a wider frequency band while avoiding low-frequency oscillation is the current low-noise amplifier. Design Difficulties and Key Points of Noise Amplifiers

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  • Broadband monolithic integrated low noise amplifier
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Embodiment Construction

[0020] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0021] like figure 1 As shown, the wideband monolithic integrated low noise amplifier that the present invention proposes comprises five parts: the first-stage amplifier is separated 100, the second-stage amplifier is separated 200, the third-stage amplifier is separated 300, the matching network between the first and second stages is separated 400 and Matching networks between the second and third stages are separated by 500. The specific circuit structure and connection relationship of each part are described as follows.

[0022] The first stage amplifier separation 100 is mainly composed of NMOS transistor M1, resistor R1, inductors L1, L2, L3, L4, capacitor C1 and bias power supply VGS1, VDS1. The connection relationship is: radio frequency signal RF in Input to the gate of M1 through capacitors C1 and L1, the gate of M1 is connected to the positive pole of VG...

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Abstract

The invention discloses a broadband monolithic integrated low noise amplifier, which comprises a first-stage amplifier, a second-stage amplifier, a third-stage amplifier, first-second stage matching and second-third stage matching, wherein the first-stage amplifier is mainly formed by one NMOS tube, one resistor, four inductors, one capacitor and two bias supplies; the second-stage amplifier is mainly formed by one NMOS tube, two resistors, two inductors, one microstrip line and two bias supplies; the third-stage amplifier is mainly formed by one NMOS tube, two resistors, two inductors, one capacitor, one microstrip line and two bias supplies; the first-second stage matching is mainly formed by one capacitor and one inductor; and the second-third stage matching is mainly formed by one capacitor and one inductor. The broadband monolithic integrated low noise amplifier has the characteristics of miniaturization, low noise, high gain, low cost and high reliability.

Description

technical field [0001] The invention belongs to the field of wireless communication, and relates to a broadband single-chip integrated low-noise amplifier. Background technique [0002] A low noise amplifier is an amplifier with a very low noise figure. It is generally used in the high frequency or intermediate frequency of various radio receivers in the fields of satellite communication, radar communication, etc., and in the amplifier circuit of electronic detection equipment to improve the sensitivity of receivers or electronic detection equipment. In the case of amplifying weak signals, the noise of the amplifier itself may seriously interfere with the signal, so it is hoped to further reduce this noise to improve the output signal-to-noise ratio. [0003] Monolithic microwave integrated circuit (MMIC) has become the first choice for designing and manufacturing millimeter-wave low-noise amplifier integrated circuits because of its low circuit loss, low noise, wide freque...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/48H03F1/56H03F3/193
CPCH03F1/26H03F1/483H03F1/56H03F3/193H03F2200/372H03F2200/451
Inventor 杨立王娅妮毕波李卫民张佃伟文武李永峰段冲侯训平焦洋
Owner BEIJING MXTRONICS CORP
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