Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of tin dioxide-titanium dioxide semiconductor-coupled ion-contra-doping photocatalytic nano fiber material

A nanofiber and semiconductor technology, applied in the field of photocatalysis, can solve the problems of limitation and high recombination rate

Inactive Publication Date: 2017-06-23
NORTHWEST NORMAL UNIVERSITY
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But since they are wide bandgap semiconductors (SnO 2 : E g = 3.5 eV, TiO 2 : E g = 3.2eV), can only be excited by ultraviolet light, and ultraviolet light in sunlight only accounts for about 5%, and its photogenerated charge e - - h + High recombination rate, which limits its large-scale application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of tin dioxide-titanium dioxide semiconductor-coupled ion-contra-doping photocatalytic nano fiber material
  • Preparation method of tin dioxide-titanium dioxide semiconductor-coupled ion-contra-doping photocatalytic nano fiber material
  • Preparation method of tin dioxide-titanium dioxide semiconductor-coupled ion-contra-doping photocatalytic nano fiber material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1, Sn 4+ / TiO 2 ~0.03 % preparation

[0035] Under the condition of magnetic stirring, 1.5000 g of Ti(OC 4 h 9 ) 4 , to get A solution Ti(OC 4 h 9 ) 4 / EtOH; in A solution according to Sn 4+ The content of the substance is 0.03% by adding SnCl 4 ·5H 2 O, get mixed solution: (SnCl 4 +Ti(OC 4 h 9 ) 4 ) / EtOH; Soak 1.2000 g of CF in the mixed solution for 30 min to make Sn 4+ 、Ti 4+ Adsorbed on the surface of CF; take it out and dry it naturally in the air to obtain the precursor material (Sn 4+ +Ti 4+ ) / CF; the precursor material (Sn 4+ +Ti 4+ ) / CF was calcined at 600 ℃ for 120 min, and cooled naturally to room temperature to obtain Sn 4+ Ion-doped TiO 2 Hollow fiber structural material Sn 4+ / TiO 2 ~0.03%.

Embodiment 2

[0038] Example 2, Ti4+ / SnO 2 ~0.03% preparation

[0039] Under the condition of magnetic stirring, add 1.5000 g of SnCl to 75.00 mL of EtOH 4 ·5H 2 O, get B solution SnCl 4 / EtOH; then in solution B according to Ti 4+ The content of the substance is 0.03% by adding Ti(OC 4 h 9 ) 4 , to get a mixed solution (Ti(OC 4 h 9 ) 4 +SnCl 4 ) / EtOH; Soak 1.2000 g of CF in the mixed solution for 30 min to make Sn 4+ 、Ti 4+ The ions are adsorbed on the surface of CF, taken out and dried naturally in the air to obtain the precursor material (Sn 4+ +Ti 4+ ) / CF; the precursor material (Sn 4+ +Ti 4+ ) / CF was calcined at 600 ℃ for 120 min, and cooled naturally to room temperature to obtain Ti 4+ Ion-doped SnO 2 Hollow fiber structural material Ti 4+ / SnO 2 ~0.03%.

[0040] Comparative example: pure SnO 2 Preparation: Add 1.5000 g of SnCl to 75.00 mL of EtOH under magnetic stirring 4 ·5H 2 O, get B solution SnCl 4 / EtOH; Soak 1.2000 g of CF in solution B for 30 min to m...

Embodiment 3

[0042] Embodiment 3, ion anti-doping, semiconductor coupling material Ti 4+ / SnO 2 @Sn 4+ / TiO 2 preparation of

[0043] Under the condition of magnetic stirring, 1.5000 g of Ti(OC 4 h 9 ) 4 , to get A solution Ti(OC 4 h 9 ) 4 / EtOH; in A solution according to SnO 2 The content of the substance is 15.00% by adding SnCl 4 ·5H 2 O, get mixed solution: (SnCl 4 +Ti(OC 4 h 9 ) 4 ) / EtOH; Soak 1.2000 g of CF in the mixed solution for 30 min to make Sn 4+ 、Ti 4+ Adsorbed on the surface of CF; take it out and dry it naturally in the air to obtain the precursor material (Sn 4+ +Ti 4+ ) / CF; the precursor material (Sn 4+ +Ti 4+ ) / CF was calcined at 600 ℃ for 120 min, and cooled naturally to room temperature to obtain TiO 2 Ion counterdoping as the host phase, TiO 2 and SnO 2 Coupling Hollow Fiber Structural Material Ti 4+ / SnO 2 @Sn 4+ / TiO 2 ~15.00 %.

[0044] with pure TiO 2 Compared to that in sample Ti 4+ / SnO 2 @Sn 4+ / TiO 2 ~15.00 % in XRD, the main ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of a SnO2-TiO2 semiconductor-coupled ion-contra-doping photocatalytic nano fiber material. The method comprises the following steps: soaking absorbent cotton fibers in a SnCl4.5H2O and Ti(OC4H9)4 ethanol solution for 25-35 minutes until Sn4<+> and Ti<4+> are adsorbed to the cotton fiber surface, and naturally drying to obtain a precursor material; and calcining the precursor material at 590-610 DEG C for 110-130 minutes to remove the template, thereby obtaining the semiconductor-coupled photocatalytic nano fiber structure material (SnO2-TiO2). More importantly, the amounts of Ti(OC4H9)4 and SnCl4.5H2O are regulated to implement the SnO2-TiO2 semiconductor material coupling and also implement ion contra-doping of Sn4<+> and Ti<4+> in the TiO2 and SnO2 phases, thereby greatly enhancing the photocatalytic properties of the TiO2 and SnO2.

Description

technical field [0001] The invention relates to the preparation of an ion-doped fiber-structured photocatalytic nanomaterial, in particular to a SnO 2 、TiO 2 The invention discloses a method for preparing semiconductor coupling and ion anti-doping photocatalytic nanofiber materials, belonging to the technical field of photocatalysis. Background technique [0002] SnO 2 and TiO 2 Due to the advantages of good chemical stability, high catalytic activity, and strong oxidation resistance, it is more prominent in the application of photocatalysis. But since they are wide bandgap semiconductors (SnO 2 : E g = 3.5 eV, TiO 2 : E g = 3.2eV), can only be excited by ultraviolet light, and ultraviolet light in sunlight only accounts for about 5%, and its photogenerated charge e - - h + The high compounding rate limits its large-scale application. Metal ion doping and semiconductor coupling are currently two commonly used modification methods. For a long time, researchers ha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/14B01J35/06C02F1/30C02F101/38
CPCC02F1/30B01J23/14C02F2101/38C02F2305/10B01J35/39B01J35/58
Inventor 苏碧桃邵彩萍张丽娜王爽韩丽娟李岚
Owner NORTHWEST NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com