Method for in-situ study of amorphization mechanism of germanium-antimony-tellurium material under electron beam irradiation

A technology of electron beam irradiation and amorphization, which is applied in the field of research on the structure evolution of phase change materials, can solve the problems of inability to reflect the structure of materials, difficulty in in-situ observation, and confusion about the mechanism of amorphization, and achieve convenient research methods, The effect of sound experimental evidence

Inactive Publication Date: 2019-12-10
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is because the amorphous phase of germanium, antimony and tellurium materials in commercial chips is usually obtained through high-temperature melting and rapid cooling, which is a non-solid phase transition process that cannot reflect the disordered process of the material structure; ion beam irradiation, etc. Although the method can gradually realize the solid-solid phase transition, it is difficult to observe in situ with the existing experimental methods, which has caused great troubles for exploring the amorphization mechanism of germanium antimony tellurium materials

Method used

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  • Method for in-situ study of amorphization mechanism of germanium-antimony-tellurium material under electron beam irradiation
  • Method for in-situ study of amorphization mechanism of germanium-antimony-tellurium material under electron beam irradiation
  • Method for in-situ study of amorphization mechanism of germanium-antimony-tellurium material under electron beam irradiation

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] This implementation takes the study of the amorphization process of germanium, antimony and tellurium materials from cubic phase to amorphous phase as an example. The specific process is as follows:

[0056] Step 1: Select a germanium, antimony and tellurium cubic phase crystal thin film deposited on a standard-sized carbon-supported copper mesh for transmission electron microscopy. The diameter of the carbon-supported copper mesh is 3 mm, and the final thickness of the film is 90 nm.

[0057] Step 2: Use plasma cleaning technology to pretreat the surface of the prepared film samples. In order to avoid oxidation, argon gas should be selected for plasma cleaning, and the cleaning time is set to 3 minutes;

[0058] Step 3: Place the pretreated electron microscope sample in a transmission electron microscope, and look for an area with flat surface, no carbon deposition, no pollution, no damage and uniform thickness in the thin film sample as the irradiation area, such as f...

Embodiment 2

[0062] This implementation takes the study of the metastability and amorphization process of germanium, antimony and tellurium materials from hexagonal phase to amorphous phase as an example. The specific process is as follows:

[0063] Step 1: Select a germanium antimony tellurium hexagonal phase crystal thin film deposited on a standard size carbon support film copper grid for transmission electron microscopy, and the final thickness of the thin film is 80 nm.

[0064] Step 2: Use plasma cleaning technology to pretreat the surface of the prepared film samples. In order to avoid oxidation, argon gas should be selected for plasma cleaning, and the cleaning time is set to 3 minutes;

[0065] Step 3: Place the pretreated electron microscope sample in a transmission electron microscope, and look for an area with flat surface, no carbon deposition, no pollution, no damage and uniform thickness in the thin film sample as the irradiation area, such as Figure 5 shown;

[0066] Step...

Embodiment 3

[0069] This implementation takes the study of the amorphization process of germanium, antimony and tellurium materials from cubic phase to amorphous phase as an example. The specific process is as follows:

[0070] Step 1: Select the germanium antimony tellurium cubic phase crystal thin film deposited on the carbon support film copper carrier grid of standard size for transmission electron microscope, and the final thickness of the thin film is 75nm.

[0071] Step 2: Use plasma cleaning technology to pretreat the surface of the prepared film samples. In order to avoid oxidation, argon gas should be selected for plasma cleaning, and the cleaning time is set to 3 minutes;

[0072] Step 3: Place the pretreated electron microscope sample in a transmission electron microscope, and look for an area with flat surface, no carbon deposition, no pollution, no damage and uniform thickness in the thin film sample as the irradiation area;

[0073] Step 4: Set the irradiation parameters and...

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Abstract

The invention discloses a method for in-situ study of an amorphization mechanism of a germanium-antimony-tellurium material under electron beam irradiation. The method comprises the following steps: selecting a germanium-antimony-tellurium crystal thin film of which the surface is deposited on a carbon supporting film copper carrying net with a standard size of a transmission electron microscope;carrying out surface pretreatment on the prepared film sample by adopting a plasma cleaning technology, and carrying out plasma cleaning by selecting argon; placing a pretreated electron microscope sample in the transmission electron microscope, and searching an area which is smooth in surface, free of carbon deposition, pollution and damage and uniform in thickness in the thin film sample to serve as an irradiation area; setting irradiation parameters, and inducing the material to be gradually amorphized; and observing and recording the evolution process of the amorphous structure of the material in situ, and analyzing the amorphous phase change mechanism of the material. According to the method, the gradual amorphization of the germanium-antimony-tellurium material is realized through electron beam irradiation, and the structural evolution process of the material amorphization is directly observed and analyzed by virtue of the transmission electron microscope, so that the convenientresearch method and a reliable experimental basis are provided for exploring the amorphization mechanism of the germanium-antimony-tellurium material.

Description

technical field [0001] The invention relates to the technical field of research on the structural evolution of phase change materials, in particular to a method for in-situ research on the amorphization mechanism of germanium, antimony and tellurium materials under electron beam irradiation. Background technique [0002] In today's information society, the pressure of data storage and processing is increasing day by day. The storage and processing of data in existing computing devices are independent of each other, and their performance has gradually been difficult to meet the needs of emerging technologies such as big data, cloud computing, and artificial intelligence. In the past ten years, the scientific and industrial circles have been committed to the development of the third type of memory technology, in order to achieve fast reading and writing and stable storage of data in the same unit. The chalcogenide phase change material based on germanium antimony tellurium mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/04G01N1/44
CPCG01N1/44G01N23/04
Inventor 张伟蒋婷婷王疆靖
Owner XI AN JIAOTONG UNIV
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