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Switched capacitor type ISFET signal reading circuit and control method thereof

A technology for reading circuits and switching capacitors, applied in electronic switches, logic circuits with logic functions, electrical components, etc., can solve the problem of low amplification accuracy of the on-chip signal reading circuit, and achieve reduced circuit power consumption and accurate acquisition , The effect of high signal accuracy

Active Publication Date: 2017-07-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low amplification accuracy of the on-chip signal reading circuit existing in the prior art, the object of the invention is to provide a switched capacitor ISFET (Ion Sensitive Field Effect Transistor, ion sensitive field effect transistor) signal reading circuit

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  • Switched capacitor type ISFET signal reading circuit and control method thereof
  • Switched capacitor type ISFET signal reading circuit and control method thereof
  • Switched capacitor type ISFET signal reading circuit and control method thereof

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Embodiment Construction

[0040]In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0041] figure 1 It is the fabrication structure of ISFET devices under standard process. The sensitive layer is a passivation layer of a standard CMOS process, and the passivation layer is usually made of silicon dioxide and silicon nitride. The topmost material is often silicon nitride (for process reasons, it may be silicon oxynitride). General, Si 3 N 4 or SiN x o y It is an effective sensitive film. When the device is sensitive, the top of the device is placed in a solution, and the potential of the solution is stabilized at a specific value by a specific reference electrode. The hydrogen ions in the solution interact with the surface of the passivation layer to generate a charge effect. The charge effect is cou...

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Abstract

The invention relates to a switched capacitor type ISFET (ion sensitive field effect transistor) signal reading circuit and a control method thereof. The signal reading circuit comprises an ion sensitive field effect transistor, an amplifying module and a timing sequence control module, wherein the amplifying module comprises at least three switches, two capacitors and an amplifier. According to the switched capacitor type ISFET signal reading circuit provided by the invention, the traditional ISFET signal reading circuit is improved, and a new control method is provided to realize a function of performing on-chip low magnification on biochemical signals in a chip; after the signals are amplified, the acquisition of the biochemical signals can be more accurate, and the precision of the collected signals is higher; meanwhile, as only one operational amplifier is used in the structure of the signal reading circuit provided by the invention, and at least two operational amplifiers are required in the traditional ''clamping circuit'', therefore the circuit power consumption of the signal reading circuit disclosed by the invention is greatly reduced; and the signal reading circuit disclosed by the invention is especially suitable for application to high-throughput biochemical devices, such as a sequenator chip, etc.

Description

technical field [0001] The present invention generally relates to the field of semiconductor microelectronics, and more particularly relates to a switched capacitor ISFET signal reading circuit and a control method thereof. Background technique [0002] In 1970, Dutch scientist Piet Bergveld proposed the concept of ion-sensitive field effect transistor (IonSensitive Field Effect Transistor, ISFET), and also took the lead in making related devices and used them for Na+ ion detection. Subsequent researchers gradually applied it to the detection of H+ concentration, that is, the pH value of liquid. With the maturity of the standard process, as a semiconductor device, with the maturity of the standard process, the manufacture of ISFET chips has naturally entered the stage of array production. And in 2004, Mark J. Milgrew of the UK took the lead in successfully producing the first ISFET array chip, and added some biological tests. The specific work can be found in the literatur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03K19/20G01N27/00
CPCG01N27/00H03K17/687H03K19/20
Inventor 杨翎张雪莲张强李钊节俊尧俞育德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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