Semiconductor structure and formation method therefor

Abstract

The present invention provides a semiconductor structure and a method for forming the same. The method for forming the semiconductor structure includes: providing a substrate; forming a spacer on the substrate, and the spacer includes a first surface opposite to the substrate , a second face opposite to the first face, and a side face between the first face and the second face, where the second face meets the side face as an edge; a hydrogen-containing reactant is used to form a cover covering the substrate and the second face The dielectric layer of the edge, the dielectric layer contains silicon-hydrogen bonds, and the dielectric layer includes: a first dielectric layer covering the substrate and the edge, and the silicon-hydrogen bonds in the first dielectric layer occupy The mole percentage is less than 2.8%. Wherein, by reducing the content of silicon-hydrogen bonds in the first silicon nitride layer, the first silicon nitride layer is not easy to generate dangling bonds, thereby increasing the stability of the silicon nitride layer; in addition, the low silicon-hydrogen bond content The warpage and deformation of the silicon nitride film is small under external influence, so the silicon nitride layer is not easy to produce cracks.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of integrated circuits is gradually reduced. The continuous shrinking of semiconductor geometry has also brought challenges to the semiconductor packaging process. [0003] Packaging (Package) is the process of assembling integrated circuits into chip final products. Specifically, the steps of packaging include: first forming an integrated circuit device, such as a transistor, etc. on a semiconductor substrate; then forming a metal interconnection structure connecting the above-mentioned integrated circuit device on the integrated circuit device; solder pads, and form solder balls on the solder pads, so as to electrically connect the chip structure to the printed circuit board or electrically connect two ...

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is to provide a semiconductor structure and its formation method, which can solve the problem that the dielectric layer is easy to crack

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