A kind of high-temperature preparation method of w-si-c system reactant

A reactant, w-si-c technology, applied in the field of high-temperature preparation of W-Si-C reactant, can solve the problem of low reaction efficiency, achieve high preparation efficiency, clean phase interface, and good phase interface compatibility Effect

Active Publication Date: 2019-07-23
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these are all solid-phase reaction systems with low reaction efficiency, and none of them involve W-Si-C reactants under high temperature (greater than 3000°C) reactions.

Method used

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  • A kind of high-temperature preparation method of w-si-c system reactant
  • A kind of high-temperature preparation method of w-si-c system reactant
  • A kind of high-temperature preparation method of w-si-c system reactant

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Preparation of high toughness W-Si-C system reactant. The preparation process is successively through powder weighing, drying treatment and powder mixing, prefabricated block preparation and arc melting. The W-Si-C-based reactant body was obtained after rapid cooling. The specific steps are as follows:

[0029] 1. Weighing, drying and mixing:

[0030] Weigh 9.9g of W powder and 0.1g of SiC powder with a purity of 99% and a particle size of 500nm (the mass ratio of W and SiC is 99:1), freeze-dry the mixed powder for 24 hours using a freeze-drying equipment, and then use a low-energy ball mill to mill Mix evenly for 6 hours to obtain mixed powder.

[0031] 2. Preparation of prefabricated blocks:

[0032] The mixed powder obtained in step 1 is packed into a 304L mould, and a tablet press is used to carry out cold press molding (pressure 30MPa), and the molding time is 3min to obtain a block green body; degree is 10 -3 The Pa pressure is 30MPa, and the temperature is ...

Embodiment 2

[0036] Preparation of high compressive strength W-Si-C system reactant. The preparation process is successively through powder weighing, drying treatment and powder mixing, prefabricated block preparation and arc melting. The W-Si-C-based reactant body was obtained after rapid cooling. The specific steps are as follows:

[0037] 1. Weighing, drying and mixing:

[0038] Weigh 9.6g of W powder with a particle size of 1 μm and 0.4 g of SiC powder with a particle size of 1 μm (the mass ratio of W and SiC is 96:4) with a purity of 99%, and freeze-dry the mixed powder for 24 hours using a freeze-drying equipment. Finally, use a low-energy ball mill for 12 hours to mix evenly.

[0039] 2. Preparation of prefabricated blocks:

[0040] The mixed powder obtained in step 1 is packed into a 304L mould, and a tablet press is used to carry out cold press molding (pressure 50MPa), and the molding time is 5min to obtain a block green compact; -3 Pa pressure is 100MPa, 1000°C heat preserv...

Embodiment 3

[0044] Preparation of high hardness W-Si-C system reactant. The preparation process is successively through powder weighing, drying treatment and powder mixing, prefabricated block preparation and arc melting. The W-Si-C-based reactant body was obtained after rapid cooling. The specific steps are as follows:

[0045] 1. Weighing, drying and mixing:

[0046] Weigh 9.6g of W powder with a particle size of 500nm and 0.4g of SiC powder with a particle size of 40nm (the mass ratio of W and SiC is 96:4) with a purity of 99% and freeze-dry the mixed powder for 24 hours, and then Use a low-energy ball mill for 12 hours to mix evenly.

[0047] 2. Preparation of prefabricated blocks:

[0048] The mixed powder obtained in step 1 is packed into a 304L mould, and a tablet press is used to carry out cold press molding (pressure 50MPa), and the molding time is 3min to obtain a block green body; after that, through discharge plasma sintering (vacuum degree is 10 -3 The Pa pressure is 30M...

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Abstract

The invention discloses a high-temperature preparation method of a W-Si-C-based reactant, comprising the following steps: (a) weighing: weighing a certain amount of SiC powder and W powder with a balance, and the mass ratio of the two is (0.5: 99.5)~(4:96); (b) prefabricated block: dry and mix the W powder and SiC powder weighed in step (a), and use cold pressing and vacuum low-temperature sintering to prepare the prefabricated block; (c) Preparation by smelting: performing a smelting reaction on the prefabricated block prepared in step (b) to obtain a W-Si-C-based reactant body. Compared with the traditional solid-phase sintering method, the present invention has high efficiency and low cost, and can produce a W-Si-C reactant with excellent performance, which can be used in electronics industry, nuclear industry, aerospace and high-pressure physics, etc. field.

Description

technical field [0001] The invention relates to a high-temperature preparation method of a W-Si-C system reactant. Background technique [0002] W-based composite materials have the characteristics of high melting point, high temperature stability, high temperature strength, high thermal conductivity, low thermal expansion coefficient, etc., and are often used as electronic contact materials, surface plasma materials, rocket nozzles and military armor-piercing materials, etc., in the electronics industry, It is widely used in construction machinery, aerospace, high pressure physics and other fields. However, due to its coarse grains and low grain boundary bonding strength, it causes processing difficulties, low temperature brittleness and temper brittleness, which limits its application prospects. [0003] At present, alloying (W-Re, W-Ir, etc.), high thermal stability particle modification, plastic deformation, etc. are used to improve the properties of W-based alloys, but...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C27/04C22C32/00C22C1/10
CPCC22C1/1015C22C1/1036C22C27/04C22C32/0047C22C1/1052
Inventor 张联盟康克家罗国强张建沈强王传彬朱佳文
Owner WUHAN UNIV OF TECH
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