Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrode Material Transfer Method Based on Sacrificial Layer

An electrode material and transfer method technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of cracks, easy cracks, too thin, etc., and achieves wide applicability, good electrical performance, and reduced impact. Effect

Active Publication Date: 2019-11-26
XIDIAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For electrode materials, direct deposition on flexible substrates is prone to cracks, resulting in the inability to achieve good electrical conductivity, and the importance of transfer is even more prominent
John A Rogers et al. used polydimethylsiloxane PDMS, an adhesive flexible material, to transfer the thin film directly from the source substrate to PDMS by placing it in contact with the target transfer material, and then transferred the The part is in contact with the target substrate, and the PDMS is slowly released to complete the transfer, see Andrew Carlson, Audrey M.Bowen, Yonggang Huang etc. Transfer Printing Techniques for Materials Assembly and Micro / NanodeviceFabrication. Adv. Mater. The scheme is more suitable for materials with good ductility such as gold and platinum, but for materials with poor ductility, cracks will be generated directly during the process of peeling off from the source substrate; Wei Deng et al. adopted a copper film as a sacrifice Layer scheme, while protecting the transferred film with electron beam photoresist polymethyl methacrylate PMMA, see Wei Deng, Xiujuan Zhang, Huanhuan Pan etc.A High-yieldTwo-step Transfer Printing Method for Large-scale Fabrication of OrganicSingle-crystal Devices on Arbitrary Substrates.Scientific Reports, 2014, 45358, since the transferred part is directly deposited on the sacrificial layer copper, the film quality of the transferred layer will be affected during the corrosion of copper, and the transferred part is too thin and There is no other support, making the operation of subsequent transfer to the target substrate extremely inconvenient; SangHoon Chae1 et al. used Al as a sacrificial layer, and spin-coated a polyimide solution to form a polyimide film PI as a support layer, see Sang Hoon Chae, Woo Jong Yu etc Transferred wrinkled Al 2 o 3 for highlystretchable and transparent graphene–carbon nanotube transistors.2012,13,403-409, but because the device layer is too thin, after the sacrificial layer is corroded, it will directly affect the transfer effect without effective support

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrode Material Transfer Method Based on Sacrificial Layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Using metal copper as a sacrificial layer to transfer tungsten electrodes

[0023] Step 1, on SiO 2 A sacrificial layer of copper material and a polyimide film were prepared on the / Si source substrate.

[0024] 1a) Using hydrophilic SiO 2 / Si source substrate and cleaning, using acetone and isopropanol respectively for 3 minutes, followed by rinsing with deionized water and blowing dry with a nitrogen gun;

[0025] 1b) The copper source is evaporated by electron beam evaporation, so that the source substrate SiO 2 Form a sacrificial layer of copper material with a thickness of 280nm on / Si, such as figure 1 as shown in (a);

[0026] 1c) Drop 2 drops of polyimide solution on the sacrificial layer of the copper material to make the coverage area slightly larger than half of the surface area of ​​the sample, and then start the spin coating equipment for spin coating. The spin coating process is as follows:

[0027] First, set the initial spin-coating spee...

Embodiment 2

[0040] Embodiment 2: Using metallic nickel as a sacrificial layer to transfer tungsten electrodes

[0041] Step 1, on SiO 2 A sacrificial layer of nickel material and a polyimide film were prepared on the / Si source substrate.

[0042] 1.1) Use hydrophilic SiO 2 / Si source substrate and cleaning, using acetone and isopropanol respectively for 4 minutes, followed by rinsing with deionized water, and drying with a nitrogen gun;

[0043] 1.2) The nickel source is evaporated by electron beam evaporation, so that the source substrate SiO 2 Form a sacrificial layer of nickel material with a thickness of 290nm on / Si, such as figure 1 as shown in (a);

[0044] 1.3) Drop 3 drops of polyimide solution on the sacrificial layer of nickel material, so that the covered area is slightly larger than half of the surface area of ​​the sample, and then start the spin coating equipment for spin coating. The spin coating process is as follows:

[0045] 1.31) Set the initial spin coating spee...

Embodiment 3

[0057] Embodiment 3: Using metallic copper as a sacrificial layer to transfer silver electrodes

[0058] Step A, on SiO 2 A sacrificial layer of copper material and a polyimide film were prepared on the / Si source substrate.

[0059] A1) Select hydrophilic SiO 2 / Si source substrate and cleaning, using acetone and isopropanol respectively for 5 minutes, then rinse with deionized water, and dry with a nitrogen gun;

[0060] A2) The copper source is evaporated by electron beam evaporation, so that the source substrate SiO 2 Form a sacrificial layer of copper material with a thickness of 290nm on / Si, such as figure 1 as shown in (a);

[0061] A3) Drop 2 drops of polyimide solution on the sacrificial layer of the copper material to make the coverage area slightly larger than half of the surface area of ​​the sample, and then start the spin coating equipment for spin coating. The spin coating process is as follows:

[0062] First, set the initial spin coating speed to 460rpm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a sacrificial layer-based electrode material transfer method, and mainly solves the problems of high probability of cracks and low successful rate in electrode material transferring. A realization scheme comprises the steps of 1) preparing a sacrificial layer with a hydrophobic property on a cleaned hydrophilic source substrate by adopting an electron beam evaporation method, and then performing spin coating of a polyimide liquid and then thermocuring; 2) pasting the peripheral marginal region of a sample wafer by a thin packaging tape, preparing an electrode on a processed sample wafer, then performing spin coating of photoresist and complete photoresist drying; 3) immersing the sample wafer after photoresist drying is performed into water, applying slight stress to rapidly realize hydrophilic separation between the sacrificial layer and the source substrate, and then performing erosion of the sacrificial layer by adopting a corrosive; and 4) removing photoresist from the released thin film by acetone, and then pasting the thin film to a target substrate and completing the transferring. The method has the advantages of simple operation, high successful rate and capability of realizing reutilization of lining substrates, and can be used for transferring of the electrode material with relatively poor ductility.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a method for transferring electrode materials, which can be used in the preparation of flexible devices. [0002] technical background [0003] For a long time, the development of electronic devices has been aimed at improving the integration and operating speed of the devices, and a series of process flows have been developed accordingly. A common feature is that these devices and integrated circuits are based on traditional rigid circuit boards, which play a strong role in supporting and protecting electronic devices, but due to their poor planarization and deformation capabilities, electronic devices are limited. a wide range of applications in other fields. For example: modern medicine needs to achieve conformal contact between electronic devices and some organs of the human body to realize real-time transmission of data observation; in bionics, it is necessary ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68318H01L2221/68386
Inventor 马晓华孙静王宏宋芳吴士伟王湛
Owner XIDIAN UNIV