Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flip LED chip structure and manufacturing method thereof

A technology of LED chips and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of the overall volume of the lens, the height is huge, the level of the maximum illuminance is restricted, and the method of substrate processing is scarce, so as to improve the light extraction. Efficiency, avoiding light loss, and reducing the effect of total reflection loss

Inactive Publication Date: 2017-08-22
SUN YAT SEN UNIV +1
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If an integral collimating lens is used, the design of the lens will be extremely complicated, and the overall volume and height of the lens will be very large
If a collimating lens is made for each chip, due to the limitation of processing accuracy, the lens has a certain height from the chip, resulting in the horizontal area of ​​the lens being much larger than the chip area, which will seriously limit the upper limit of the density of the chip arrangement, and ultimately restrict level of maximum illuminance
Currently, methods for substrate processing for flip chips are scarce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flip LED chip structure and manufacturing method thereof
  • Flip LED chip structure and manufacturing method thereof
  • Flip LED chip structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Embodiment 1 of the present invention: as figure 2 As shown, the two-dimensional periodic array lens in the three-dimensional graphic structure 1 is composed of multiple groups of hemispherical convex units, forming a three-dimensional diagram of two-dimensionally arranged hemispherical collimating lenses. The substrate processing pattern of the light-emitting surface of the chip is a two-dimensional array of hemispheres, which has a collimating effect on light-emitting.

[0050] Such as image 3 As shown, the ordinary flip-chip LED chip simulates the light effect diagram, such as Figure 5 As shown, the simulated light effect diagram after adding a two-dimensional array of hemispheres on the sapphire substrate 2, after comparing the simulated light effect diagrams of the two, it is found that changing the state of the original mirror surface of the flip-chip LED chip and adding a hemispherical array Finally, it can change the light intensity distribution, reduce or ...

Embodiment 2

[0061] Embodiment 2 of the present invention: as Figure 5 As shown, the one-dimensional periodic array lens in the three-dimensional graphic structure 1 has an array pattern of a one-dimensional array of semi-cylindrical strips, and multiple groups of semi-cylindrical strips form a three-dimensional diagram of one-dimensionally arranged collimating lenses. The pattern can achieve light collimation in the periodic direction, but does not produce light collimation in the cylindrical direction, and can reduce or avoid the loss of light output by the secondary optical system.

[0062] The chip manufacturing steps of the present embodiment are as follows, wherein the mask material is photoresist:

[0063] Step 1: using MOCVD (metal organic compound chemical vapor deposition) equipment to deposit an LED structure semiconductor material layer on the sapphire substrate 2, including an N-type semiconductor material 3, a light-emitting layer 5, and a P-type semiconductor material 6;

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a flip LED chip structure and a manufacturing method thereof. The flip LED chip structure comprises a three-dimensional graphic structure, a sapphire substrate, a semiconductor material layer, an N electrode, a contact reflective layer, an insulating isolation layer, a P electrode and a welding electrode 10, wherein the semiconductor material layer comprises an N-type semiconductor material, a light-emitting layer and a P-type semiconductor material. The manufacturing method comprises the steps of: forming a mask material on the surface of the sapphire substrate, manufacturing a photoresist pattern on the mask by adopting a photoetching method, etching the mask, removing a photoresist, forming a three-dimensional graphic structure mask layer on the surface of the substrate, forming the three-dimensional graphic structure on the surface of the substrate, and eliminating the mask finally. According to the flip LED chip structure and the manufacturing method thereof, the light emergent surface of the sapphire substrate of the flip LED chip can be designed and processed optically according to light source requirements of a specific application scene, and the single, periodic or non-periodic three-dimensional graphic structure can be manufactured, thereby realizing the needed light source requirements.

Description

technical field [0001] The invention belongs to the field of LED manufacturing, and in particular relates to a flip-chip LED chip structure and a manufacturing method thereof. Background technique [0002] Light-emitting diode (LED) is an important solid-state lighting device. Mainstream LED devices can be divided into gallium arsenide (GaAs) and gallium phosphide (GaP) system infrared, red and yellow LEDs, and gallium nitride (GaN) system blue-green and ultraviolet LEDs according to their material systems. Among them, blue-green and ultraviolet LEDs of the GaN system can excite phosphors to produce yellow light and mix with it to form white light, which has been widely used in the lighting market. [0003] For GaN system LEDs, they are divided into silicon carbide (SiC) substrates, silicon (Si) substrate LEDs and sapphire (Al2O3) substrate LEDs by substrate distinction. Doping Al or In elements in GaN materials can emit color ranges from ultraviolet to green light. SiC an...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/007H01L33/20
Inventor 王钢劳裕钦马学进马艳飞陈梓敏范冰丰闫林超
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com