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A fluorescent/phosphorescent hybrid white light OLED

A phosphorescence and fluorescence technology, which is applied in the manufacturing of organic light-emitting devices, semiconductor/solid-state devices, electric solid-state devices, etc., can solve the complex device structure of multi-emitting layer mixed white light OLED, limit the mass industrial production of white light OLED, and affect the stability of the device. It can reduce the cost, balance the color stability, and reduce the preparation cost.

Active Publication Date: 2019-03-19
TAIYUAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The introduction of additional spacer layers leads to a very complex device structure for multi-emitting layer hybrid white light OLEDs
At the same time, the multi-layer structure also introduces many heterojunction interfaces, which affects the stability of the device.
Complex device structure also brings high manufacturing cost
[0013] To sum up, the currently reported hybrid white light OLEDs either have complex device structures or complex fabrication processes, which make the preparation of hybrid white light OLEDs based on these structures poor reproducibility and high cost, which limits the mass industrial production of white light OLEDs.

Method used

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  • A fluorescent/phosphorescent hybrid white light OLED
  • A fluorescent/phosphorescent hybrid white light OLED
  • A fluorescent/phosphorescent hybrid white light OLED

Examples

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preparation example Construction

[0059] During the preparation of the device, the evaporation rate of the material and the thickness of the evaporation film are monitored by a quartz crystal frequency meter connected outside the vacuum chamber. Among them, organic materials, MoO 3 The evaporation rates of , LiF and Al are about 1 Å / s, 0.3 Å / s, 0.1 Å / s and 3 Å / s, respectively. The overlapping part of the ITO glass and the aluminum cathode is used as the effective light-emitting layer of the device, and the effective light-emitting area is 3mm×3mm.

[0060] The detailed process of preparing the white light OLED device of the embodiment of the present invention by thermal evaporation is as follows.

[0061] First, a layer of MoO was deposited in high vacuum on the ITO glass substrate 3 As the hole injection layer (HIL), the thickness is maintained at a certain value between 2 and 8 nm. Second, in MoO 3 On the film layer, a layer of organic layer is continuously deposited by high vacuum thermal deposition, an...

Embodiment 1

[0068] The white light device W1 is prepared according to the above-mentioned specific embodiment, and the device structure is ITO / MoO 3 (3nm) / TCTA(40nm) / Bepp 2 (3nm) / Ir(piq) 2 (acac) (0.08nm) / Bepp 2 (2nm) / Ir(ffpmq) 2 (acac)(0.06nm) / Bepp 2 (2nm) / Ir(ppy) 3 (0.03nm) / Bepp 2 (3nm) / TPBi (50nm) / LiF (1nm) / Al (200nm).

[0069] figure 2 A schematic diagram of the structure of the white light device W1 is given. ITO correspondence figure 1 The middle anode 2 has a surface resistance of 15 ohms / □, and the transparent substrate 1 is a transparent glass substrate with a thickness of 1.1 mm. MoO 3 correspond figure 1 The middle hole injection layer 3 has a thickness of 3 nm. TCTA correspondence figure 1 Medium hole transport layer 4, thickness 40nm. TPBi correspondence figure 1 Medium electron transport layer 6, thickness 50nm. LiF correspondence figure 1 The electron injection layer 7 has a thickness of 1 nm. Al corresponds figure 1 Cathode 8 in 200nm thick. Bep...

Embodiment 2

[0073] Keep the structure of the white light device W1 and device preparation materials unchanged, change the ultra-thin red (0.08nm Ir(piq) 2 acac layer), yellow (0.06nm Ir (ffpmq) 2 acac layer), green (0.03nm Ir(ppy) 3 layer) phosphorescent light-emitting layer embedded into a 10 nm thick blue fluorescent light-emitting layer (Bepp 2 layer), the intercalation order from anode to cathode is green / yellow / red, and the white light device W2 is prepared, and the device structure is ITO / MoO 3 (3nm) / TCTA (40nm) / Bepp 2 (3nm) / Ir(ppy) 3 (0.03nm) / Bepp 2 (2nm) / Ir(ffpmq) 2 acac (0.06nm) / Bepp 2 (2nm) / Ir(piq) 2 acac(0.08nm) / Bepp 2 (3nm) / TPBi (50nm) / LiF (1nm) / Al (200nm), the device structure is as follows figure 2 shown.

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Abstract

A fluorescent / phosphorescent mixed white light OLED, the light-emitting layer of which is composed of no less than two fluorescent light-emitting layers composed of non-doped blue fluorescent materials and a phosphorescent light-emitting layer embedded between the fluorescent light-emitting layers, any one The first layer of phosphorescent light-emitting layer is composed of a single phosphorescent material with a thickness not greater than 0.1nm. The mixed light emitted by phosphorescent materials of different colors in all phosphorescent light-emitting layers is complementary to the blue light emitted by blue fluorescent materials. The blue fluorescent light-emitting materials are separated, and the total thickness of the light-emitting layer is less than 30nm. By changing the order in which ultra-thin phosphorescent materials are embedded in the blue fluorescent light-emitting layer or the thickness of ultra-thin layers of different colors, and changing the energy transfer between different color light-emitting materials, the emission spectrum of white OLEDs can be easily improved to obtain a more ideal White light emission.

Description

technical field [0001] The invention belongs to the technical field of organic semiconductor light-emitting devices, and relates to a white light OLED, in particular to a fluorescent / phosphorescence mixed white light OLED. Background technique [0002] Organic light-emitting diodes (OLEDs) have the characteristics of surface light source, lightness, flexibility, transparency, etc., have been widely studied and continue to mature, and can be widely used in next-generation lighting and display fields, with a broad market space and Huge application prospects. [0003] The light-emitting layer of a white light OLED is usually composed of two or more light-emitting materials with complementary light colors. OLED light-emitting materials are divided into fluorescent materials and phosphorescent materials. [0004] Since only singlet excitons can be used to emit light from fluorescent materials, the internal quantum efficiency of OLEDs based on fluorescent materials is only 25%. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52
CPCH10K50/156H10K50/85H10K50/856H10K2102/301
Inventor 苗艳勤赵波王科翔贾虎生刘旭光高龙王忠强郝玉英王华许并社
Owner TAIYUAN UNIV OF TECH
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