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Etching solution composition

A technology of composition and etching solution, applied in the field of etching solution composition, can solve the problems of low pH, increase of TFT elements, defects, etc., and achieve the effect of reducing cost

Active Publication Date: 2022-01-04
ENF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the case of etching a source electrode and a drain electrode formed of copper and molybdenum or a molybdenum alloy with the etching solution composition, since it contains a fluorine compound and has a low pH, there are not only the source electrode and the drain electrode, Moreover, the problem that the oxide semiconductor (InGaZnO) formed under the source electrode and the drain electrode is also etched simultaneously
Etching of such an oxide semiconductor increases the deterioration of TFT device characteristics

Method used

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Examples

Experimental program
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Effect test

Embodiment 1-15 and comparative example 1-5

[0063] Compositions of Examples 1-15 and Comparative Examples 1-5 were prepared by mixing the respective components at the component contents described in Table 1 below.

[0064] 【Table 1】

[0065]

[0066] In the table 1, ATZ: 5-aminotetrazole (5-aminotetrazole), IDA: iminodiacetic acid (iminodiacetic acid), MA: malonic acid (malonic acid), GA: glycolic acid (glycolic acid), CA: Citric acid, GuA: Glutaric acid, TA: Tartaric acid, AP: Ammonium phosphate, SP: Sodium phosphate, KP: Potassium phosphate, BA: Butylamine, PA: Pentylamine, OA: octylamine, EBA: 2-ethyl-1-butanamine, HxA: 2-hexanamine, EHA: 2-ethyl 2-ethyl hexylamine, HpA: Heptylamine, HA: Hexylamine, CHA: Cyclohexylamine, GC: Glycine and NH: Sodium hydroxide ) The content unit of each component is parts by weight.

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Abstract

The present invention relates to an etchant composition comprising hydrogen peroxide, an etch inhibitor, a chelating agent, an etch additive, a hydrogen peroxide stabilizer and a pH adjuster, which prevents oxide semiconductor Etched in an etch process containing copper and molybdenum films, thereby minimizing defects that may occur during the etch process. In addition, since an insulating protective layer (etching stop layer) process conventionally used to ensure stable electrical characteristics of an oxide semiconductor is not required, the cost of manufacturing an oxide semiconductor TFT can be reduced.

Description

technical field [0001] The present invention relates to an etchant composition of a copper and molybdenum film or a copper and molybdenum alloy film (hereinafter referred to as "copper / molybdenum film"), especially a copper / molybdenum film used as display electrodes such as TFT-LCD and OLED Membrane etchant composition. Background technique [0002] Semiconductor devices and microcircuits such as TFT-LCD and OLED are completed through a series of photolithography processes as follows, that is, conductive metal films such as aluminum, aluminum alloys, copper and copper alloys or silicon oxide films, nitrided films, etc. are formed on the substrates. On an insulating film such as a silicon film, apply photoresist evenly, then expose and develop through a patterned mask to form a photoresist with a desired pattern, and transfer the pattern to the location by dry etching or wet etching. The metal film or insulating film under the photoresist, and then the unnecessary photoresis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/26
CPCC23F1/18C23F1/26
Inventor 尹景湖申孝燮金世训
Owner ENF TECH