ITO-Ag-ITO etching liquid for inhibiting pits on thinned TFT liquid crystal display

A liquid crystal display and etching solution technology, applied in the etching solution field, can solve problems such as not achieving ideal effects, and achieve the effects of good large-scale application prospects, low cost, and outstanding pit suppression effect.

Inactive Publication Date: 2017-09-01
HEFEI HUIKE PRECISION DIE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, some researchers have made many attempts, but the desired effect has not yet been achieved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] Embodiment 1 An ITO-Ag-ITO etchant for suppressing pits after thinning of a TFT liquid crystal display is composed of the following raw materials in parts by weight: 13 parts of hydrofluoric acid, 18 parts of nitric acid, 9 parts of acetic ammonium fluoride 6 parts of tetrahydrofuran, 4 parts of sodium perchlorate, 5 parts of disodium edetate, 3 parts of potassium molybdate, 4 parts of permethrin, 8 parts of potassium monohydrogen phosphate, 7 parts of nonionic surfactant, additives 3 parts, 5 parts of defoamer, 50 parts of deionized water.

[0014] There are no more than 200 particles with a particle size greater than 0.2 μm per 1000 Kg in the etching solution.

[0015] The additive is organic phosphonic acid.

[0016] The general structural formula of the organic phosphine sulfonic acid is at least one of HO3S(CH2)m-N-(CH2PO3H2)n, m is 1-2, and n is 1-2.

[0017] The defoamer is at least one selected from diethylhexanol, isooctyl alcohol, isoamyl alcohol and diisobu...

Embodiment 2

[0019] Embodiment 2 An ITO-Ag-ITO etchant for suppressing pits after thinning of a TFT liquid crystal display is composed of the following raw materials in parts by weight: 16 parts of hydrofluoric acid, 22 parts of nitric acid, 14 parts of acetic ammonium fluoride 10 parts of tetrahydrofuran, 9 parts of sodium perchlorate, 12 parts of disodium edetate, 8 parts of potassium molybdate, 8 parts of permethrin, 14 parts of potassium monohydrogen phosphate, 11 parts of nonionic surfactant, additives 6 parts, 9 parts of defoamer, 60 parts of deionized water.

[0020] There are no more than 200 particles with a particle size greater than 0.2 μm per 1000 Kg in the etching solution.

[0021] The additive is organic phosphonic acid.

[0022] The general structural formula of the organic phosphine sulfonic acid is at least one of HO3S(CH2)m-N-(CH2PO3H2)n, m is 1-2, and n is 1-2.

[0023] The defoamer is at least one selected from diethylhexanol, isooctyl alcohol, isoamyl alcohol and di...

Embodiment 3

[0025] Embodiment 3 An ITO-Ag-ITO etchant for suppressing pits after thinning of a TFT liquid crystal display is composed of the following raw materials in parts by weight: 14 parts of hydrofluoric acid, 20 parts of nitric acid, 11 parts of acetic ammonium fluoride Parts, 8 parts of tetrahydrofuran, 7 parts of sodium perchlorate, 8 parts of disodium edetate, 5 parts of potassium molybdate, 6 parts of permethrin, 11 parts of potassium monohydrogen phosphate, 9 parts of nonionic surfactant, additives 4 parts, 7 parts of defoamer, 55 parts of deionized water.

[0026] There are no more than 200 particles with a particle size greater than 0.2 μm per 1000 Kg in the etching solution.

[0027] The additive is organic phosphonic acid.

[0028] The general structural formula of the organic phosphine sulfonic acid is at least one of HO3S(CH2)m-N-(CH2PO3H2)n, m is 1-2, and n is 1-2.

[0029] The defoamer is at least one selected from diethylhexanol, isooctyl alcohol, isoamyl alcohol an...

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Abstract

The invention discloses an ITO-Ag-ITO etching liquid for inhibiting pits on a thinned TFT liquid crystal display. The ITO-Ag-ITO etching liquid comprises the following raw materials in parts by weight: 13-16 parts of hydrofluoric acid, 18-22 parts of nitric acid, 9-14 parts of ammonium fluoride, 6-10 parts of tetrahydrofuran, 4-9 parts of sodium perchlorate, 5-12 parts of ethylene diamine tetraacetic acid, 3-8 parts of potassium molybdate, 4-8 parts of esbiothrin, 8-14 parts of potassium phosphate monobasic, 7-11 parts of a nonionic surfactant, 3-6 parts of an additive, 5-9 parts of a defoamer and 50-60 parts of deionized water. The ITO-Ag-ITO etching liquid is used for performing etching pretreatment on a TFT liquid crystal display substrate before etching thinning, has a prominent inhibition effect on the pits, remarkably improves the product qualification rate, is easy to prepare, and therefore, has a favorable large-scale application prospect.

Description

technical field [0001] The invention relates to the technical field of etching solution, in particular to an ITO-Ag-ITO etching solution for suppressing pits after thinning of a TFT liquid crystal display. Background technique [0002] TFT liquid crystal displays are constantly developing in the direction of thinning and thinning. However, due to the problem of the original substrate of TFT liquid crystal displays, some pits will be formed after thinning by chemical methods, which greatly reduces the qualified rate of products. Although some pits can be removed by grinding and polishing, the polishing process may cause Zara and poor pressing of TFT products. At the same time, the viscosity of glycerin and ethylene glycol in the existing etching solution is significantly affected by temperature. The etching process itself is an exothermic reaction. When etching silver, a large amount of heat accumulates on the surface of the time. The increase in temperature will cause the vi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
CPCC23F1/30
Inventor 白航空
Owner HEFEI HUIKE PRECISION DIE CO LTD
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