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A hosrmnzn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under high electric field and preparation method thereof

A ferroelectric thin film and ferroelectric technology, applied in the field of HoSrMnZn co-doped bismuth ferrite ferroelectric thin film, to achieve the effect of uniform grain size, stable ferroelectricity and high density

Active Publication Date: 2020-06-30
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, there is no information about Bi with stable ferroelectricity under high electric field 0.89 Ho 0.08 Sr 0.03 Fe 0.95 mn 0.03 Zn 0.02 o 3 Related reports on ferroelectric thin films and their preparation methods

Method used

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  • A hosrmnzn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under high electric field and preparation method thereof
  • A hosrmnzn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under high electric field and preparation method thereof
  • A hosrmnzn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under high electric field and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and zinc nitrate as raw materials (excess 5% bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 dissolved in ethylene dichloride In the mixed solution of methyl alcohol ether and acetic anhydride, a stable precursor solution with a total concentration of metal ions of 0.3 mol / L is obtained; wherein the volume ratio of glycol methyl ether and acetic anhydride is 3:1;

[0029] Step 2: Put the FTO / glass substrate in detergent, acetone, and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into an oven to bake until dry, take it out and let it stand to room temperature. Then put the clean substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanline...

Embodiment 2

[0037] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and zinc nitrate as raw materials (excess 5% bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 dissolved in ethylene dichloride In the mixed solution of methyl alcohol ether and acetic anhydride, a stable precursor solution with a total concentration of metal ions of 0.2mol / L is obtained; wherein the volume ratio of methyl glycol ether and acetic anhydride is 2.5:1;

[0038] Step 2: Put the FTO / glass substrate in detergent, acetone, and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into an oven to bake until dry, take it out and let it stand to room temperature. Then put the clean substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanlin...

Embodiment 3

[0041] Step 1: Using bismuth nitrate, holmium nitrate, strontium nitrate, iron nitrate, manganese acetate and zinc nitrate as raw materials (excess 5% bismuth nitrate), the molar ratio is 0.94:0.08:0.03:0.95:0.03:0.02 dissolved in ethylene dichloride In the mixed solution of methyl alcohol ether and acetic anhydride, a stable precursor solution with a total concentration of metal ions of 0.4 mol / L is obtained; wherein the volume ratio of glycol methyl ether and acetic anhydride is 3.5:1;

[0042] Step 2: Put the FTO / glass substrate in detergent, acetone, and ethanol in order for ultrasonic cleaning. After each ultrasonic cleaning for 10 minutes, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen. Then put the FTO / glass substrate into an oven to bake until dry, take it out and let it stand to room temperature. Then put the clean substrate in an ultraviolet irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanli...

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Abstract

The invention provides aHoSrMnZncodopedbismuth ferrateferroelectric film with stable ferroelectricity in high electric field, and a preparation method thereof. Bismuth nitrate, holmium nitrate, strontium nitrate, ferric nitrate, manganese acetate and zinc nitrate are taken as raw materials (bismuth nitrate is over capacity for 5 percent), ethylene glycol monomethyl ether and acetic anhydride are taken as solvents, and a Bi0.89Ho0.08 Sr0.03 Fe0.95Mn0.03Zn0.02O3 ferroelectric film with stable ferroelectricity in high electric field is prepared through a spin-coating method and a layer-by-layerannealing technology. The film adopts a sol-gel technology as well asthe spin-coating method and the layer-by-layerannealing method, is simple in equipment requirement, easy to realize experiment conditions, suitable for preparing films on large surfaces and surfaceswithirregularshapes, accurate and controllable in chemical components, and good in uniformity, and can effectivelyimprovethepenetration resistance and increasetheresidualpolarization value.

Description

Technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of a HoSrMnZn co-doped bismuth ferrite ferroelectric thin film with stable ferroelectricity under a high electric field on the surface of a functionalized FTO / glass substrate, specifically Bi 0.89 Ho 0.08 Sr 0.03 Fe 0.95 Mn 0.03 Zn 0.0 2 O 3 Ferroelectric thin film. Background technique [0002] Ferroelectric materials have spontaneous polarization, which can be reversed (switched) with changes in the applied electric field. For ferroelectric thin films, the high electric field required for polarization reversal can be obtained at a relatively low voltage. This feature enables ferroelectric thin films to be integrated into modern electronic devices. Non-volatile ferroelectric random memories, especially high-density ferroelectric memory devices, have shown great application prospects in the commercial field. Compared with the widely used memories, ferroelectric random...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/10C04B35/453C04B35/622
CPCC04B35/453C04B35/62218C04B2235/3213C04B2235/3224C04B2235/3262C04B2235/3272C04B2235/3284C04B2235/662
Inventor 谈国强郭美佑杨玮刘云任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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