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Stepped-current-blocking-layer-included vertical type power device

A technology of current blocking layer and power device, applied in the field of microelectronics, can solve the problems of increasing on-resistance of devices, and achieve the effects of reducing on-resistance, continuously increasing breakdown voltage, and improving breakdown voltage

Active Publication Date: 2017-09-12
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in GaN-based current aperture heterojunction field effect devices using superjunction structures, additional on-resistance will be generated near the superjunction when the device is turned on, and the on-resistance will increase with the increase of the thickness of the drift layer. Therefore, although the breakdown voltage of the device increases with the increase of the thickness of the drift layer, the on-resistance of the device will also increase accordingly, and the contradiction between the breakdown voltage and on-resistance in the device has not been completely resolved.

Method used

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  • Stepped-current-blocking-layer-included vertical type power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1: Fabricate a vertical current-blocking-layer vertical power device in which the step number m of the current-blocking layer is 2.

[0048] Step 1. Epitaxial n on substrate 1 - type GaN, forming a drift layer 2, such as image 3 a.

[0049] use n + Type GaN is used as the substrate 1, and the epitaxial thickness is 3 μm and the doping concentration is 1×10 on the substrate 1 by metal organic chemical vapor deposition technology. 15 cm -3 the n - type GaN material to form a drift layer 2, wherein:

[0050] The process conditions used for epitaxy are: the temperature is 950°C, the pressure is 40Torr, and the SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min.

[0051] Step 2. Epitaxial n-type GaN on the drift layer to form an aperture layer 3, such as image 3 b.

[0052] Using metal-organic chemical vapor deposition technology, the epit...

Embodiment 2

[0087] Embodiment 2: Fabricate a vertical power device with a stepped current blocking layer with a step number m of 2 in the current blocking layer.

[0088] Step 1. Epitaxial n on the substrate - type GaN, forming a drift layer 2, such as image 3 a.

[0089] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 is the dopant source, the flow rate of hydrogen gas is 4400 sccm, the flow rate of ammonia gas is 4400 sccm, and the flow rate of gallium source is 110 μmol / min. + Type GaN is used as the substrate 1, and the epitaxial thickness is 5 μm and the doping concentration is 1×10 16 cm -3 the n - type GaN material to complete the fabrication of the drift layer 2 .

[0090] The second step. Epitaxial n-type GaN on the drift layer to form the aperture layer 3, such as image 3 b.

[0091] At a temperature of 1000°C and a pressure of 45Torr, SiH 4 As the doping source, the flow rate of hydrogen gas is 4400sccm, the flow rate of ammonia gas is 4400sccm, and the fl...

Embodiment 3

[0118] Example 3: Fabrication of a vertical power device with a stepped current blocking layer with a step number m of 4 in the current blocking layer

[0119] Step A. The temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. + Type GaN is used as the substrate 1, and the epitaxial thickness is 10 μm and the doping concentration is 1×10 18 cm -3 the n - Type GaN material, making drift layer 2, such as image 3 a.

[0120] Step B. The temperature is 950°C, the pressure is 40Torr, and SiH 4 As the doping source, the flow rate of hydrogen gas is 4000 sccm, the flow rate of ammonia gas is 4000 sccm, and the flow rate of gallium source is 100 μmol / min. Using metal organic chemical vapor deposition technology, the epitaxial thickness on the drift layer 2 is 10 μm, and the doping concentration is 1×10 18 cm -3 The ...

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Abstract

The invention discloses a stepped-current-blocking-layer-included vertical type power device, so that problems of low puncture voltage and high on resistance of the same kind of device can be solved. The stepped-current-blocking-layer-included vertical type power device comprises a substrate (1), a drift layer (2), an aperture layer (3), two multi-stage stepped-structure current blocking layers (4) in a left-right symmetric manner, a channel layer (6), and a barrier layer (7). Source slots (10) are etched at the two sides of the channel layer (6) and the barrier layer (7); and two source electrodes (11) are deposited in the source slots (10) at the two sides. A p type cap layer (8) is formed at the barrier layer between the source electrodes (11) in an epitaxy manner; steps (9) are etched at the two sides of the p type cap layer (8); and a gate (12) is deposited on the p type cap layer (8). A drain electrode (13) is deposited under the substrate (1). An aperture (5) is formed between the two symmetric current blocking layers (4). The stepped-current-blocking-layer-included vertical type power device having advantages of high puncture voltage, simple process, low on resistance, and high yield can be applied to a power electronic system.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a vertical power device with a ladder current blocking layer, which can be used in a power electronic system. technical background [0002] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditional first-generation Si s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
Inventor 毛维石朋毫边照科郝跃马晓华李康谢涌
Owner XIDIAN UNIV
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