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A preparation method of a flexible tio2 resistive variable memory array

A resistive variable memory, flexible technology, applied in the direction of electrical components, etc., can solve the problem of destroying organic substrates, and achieve the effects of cost reduction, good memory retention characteristics and cycle characteristics

Active Publication Date: 2019-06-25
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if this kind of oxide material is prepared by physical deposition technology, although it is easy to prepare at a low temperature on a flexible substrate, it needs to be etched to form a storage unit; if it is prepared by a low-cost wet chemical method, this Oxide-like materials often need to undergo high-temperature heat treatment above 400 °C, which damages the organic substrate.
Therefore, there are still certain difficulties in the preparation of such flexible devices by physical deposition or chemical methods.

Method used

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  • A preparation method of a flexible tio2 resistive variable memory array
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  • A preparation method of a flexible tio2 resistive variable memory array

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preparation example Construction

[0031] A flexible TiO 2 The preparation method of the resistive variable memory, the titanium ion precursor solution is coated on the flexible PET / ITO substrate to form TiO on the surface by the pulling method 2 Gel film, then PET / ITO / TiO 2 Amorphous TiO was obtained by irradiation under a high-pressure mercury lamp and a low-pressure mercury lamp in sequence. 2 Thin film arrays, finally in PET / ITO / TiO 2 Deposit Pt electrodes on the array to obtain flexible PET / ITO / TiO with good retention and cycle characteristics 2 memory array.

[0032] Specifically include the following steps:

[0033] Step 1), mixing bis(acetylacetonate) ethoxy isopropoxy titanate with ethylene glycol methyl ether solution to obtain Ti 4+ Solution A with 0.5mol / L ions;

[0034] Step 2), add acetylacetone solution in solution A, make acetylacetone and Ti 4+ The molar ratio of is 1:1, obtains solution B after stirring;

[0035] Step 3), use the solution B obtained in step 2), use PET / ITO as the subst...

Embodiment 1

[0047] Mix bis(acetylacetonate) ethoxy isopropoxy titanate with ethylene glycol methyl ether solution to obtain Ti 4+ Ion is a solution of 0.5mol / L; add acetylacetone solution, so that acetylacetone and Ti 4+ The molar ratio is 1:1, and a clear solution is obtained after stirring; using this solution, the PET / ITO is used as the substrate by the pulling method, and the coating film is pulled at a speed of 2mm / s to obtain TiO 2 Gel film; obtained in PET / ITO / TiO 2 Put a mask on it, and place it under a high-pressure mercury lamp with a dominant wavelength of 365nm for 30 minutes of irradiation. After the irradiation, the PET / ITO / TiO 2 Immerse in an absolute ethanol solution, soak for 1 minute, take it out, blow dry with nitrogen, and obtain TiO 2 Gel film array; then placed on a heating plate at 150°C, and placed under a low-pressure mercury lamp with wavelengths of 185nm and 254nm, and irradiated for 3 hours. During the irradiation process, the temperature of the heating plat...

Embodiment 2

[0051] Mix bis(acetylacetonate) ethoxy isopropoxy titanate with ethylene glycol methyl ether solution to obtain Ti 4+ Ion is a solution of 0.5mol / L; add acetylacetone solution, so that acetylacetone and Ti 4+ The molar ratio is 1:1, and a clear solution is obtained after stirring; using this solution, the PET / ITO is used as the substrate by the pulling method, and the coating film is pulled at a speed of 2mm / s to obtain TiO 2 Gel film; obtained in PET / ITO / TiO 2 Put a mask on it, and place it under a high-pressure mercury lamp with a dominant wavelength of 365nm for 60 minutes of irradiation. After the irradiation, the PET / ITO / TiO 2 Immerse in an absolute ethanol solution, soak for 1 minute, take it out, blow dry with nitrogen, and obtain TiO 2 Gel film array; then placed on a heating plate at 150° C., and placed under a low-pressure mercury lamp with wavelengths of 185 nm and 254 nm, and irradiated for 5 hours. During the irradiation process, the temperature of the heating ...

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Abstract

The invention relates to a flexible TiO 2 A method for preparing a resistive variable memory array, the method is as follows: dissolving bis(acetylacetonate)ethoxyisopropoxy titanate and acetylacetone in ethylene glycol methyl ether in a molar ratio of 1:1 and mixing them to obtain titanium A precursor solution with an ion concentration of 0.5mol / L. The solution was coated on a flexible PET / ITO substrate by the pulling method, irradiated with 365nm ultraviolet rays, and washed with ethanol to obtain TiO 2 After the gel film microarray, it is further irradiated with 254nm and 185nm ultraviolet rays at 150°C for 3-5 hours, and further prepared by Pt electrodes, which can obtain flexible PET / ITO / TiO with good retention characteristics and cycle characteristics. 2 memory array.

Description

technical field [0001] The invention relates to the technical field of manufacturing information storage devices, in particular to a flexible TiO 2 A method for preparing a resistive memory array. Background technique [0002] In today's era of information explosion, the amount of information is increasing rapidly. With the rapid development of computer technology, the Internet and various new popular electronic products such as mobile phones, digital cameras, and notebook computers, people have higher and higher performance requirements for memory. Not only is it required to have high density, high speed, low cost, and low power consumption, but it is also non-volatile. Therefore, the research and development of new non-volatile memory technology has become one of the hot spots of today's technology and industrial development. According to the storable performance of stored information, memory can be divided into two categories: volatile memory (Volatile memory) whose dat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/021H10N70/011
Inventor 黄文欢马养民张亚男殷政康祎璠刘潼
Owner SHAANXI UNIV OF SCI & TECH