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Metal-doped graphene and growth method of the same

A metal doping and graphene technology, which is applied in the field of doping graphene, can solve the problem of unsatisfactory doping concentration and achieve fast processing effect

Active Publication Date: 2017-09-19
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the current manufacturing technology, if you want to dope heterogeneous elements in graphene, you often need additional heat treatment or select a specific substrate, and the doping concentration is not ideal.

Method used

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  • Metal-doped graphene and growth method of the same

Examples

Experimental program
Comparison scheme
Effect test

experiment example 1

[0060] In Experimental Example 1, Al-doped graphene was grown by microwave plasma flame (MPT) chemical vapor deposition method as an example.

[0061] First, a titanium sheet substrate is set in a quartz reactor in an MPT chemical vapor deposition machine, and 200 mg of aluminum trichloride as a metal precursor and 50 mg of diphenyl disulfide (BDS) as a group VI precursor are also placed into the reactor, followed by methane and nitrogen as carbon precursors, with a flow ratio of 1:4. Then, at a working pressure of 0.05 torr, plasma was excited with a microwave wattage of 800W for 15 minutes of growth.

[0062] After the microwave is focused, the plasma dissociation rate can be increased, and the group VI precursors, metal precursors and carbon precursors can be decomposed at the same time, resulting in figure 2 The group VI atom 204 in the group VI precursor shown increases the carbon precursor (CH 4 ) 200 and the metal atom 202 in the metal precursor, so that the metal at...

experiment example 2

[0065] Use the same steps as Experimental Example 1 to grow aluminum-doped graphene, but the processing parameters are slightly different, including: the amount of aluminum trichloride is changed to 300mg, the amount of diphenyl disulfide (BDS) is changed to 100mg; The gas is changed to methane and argon with a flow ratio of 1:3; the working pressure is changed to 0.02torr, the microwave wattage is 1000W, and the processing time is 10 minutes.

[0066] After the obtained aluminum-doped graphene is analyzed by XPS, it can be known that the doping ratio is 10.8at% aluminum element and 5.6at% sulfur element, such as Image 6 shown. and Figure 7 It is an analysis chart for sulfur (S).

experiment example 3

[0068] Use the same steps as experimental example 1 to grow aluminum-doped graphene, but the processing parameters are slightly different, including: the amount of aluminum trichloride is changed to 500mg, the amount of diphenyl disulfide (BDS) is changed to 150mg; The gas is changed to methane and nitrogen with a flow ratio of 1:4; the working pressure is changed to 0.02torr, the microwave wattage is 1200W, and the processing time is 10 minutes.

[0069] After the obtained aluminum-doped graphene is analyzed by XPS, it can be known that the doping ratio is 20at% aluminum element, 0.5at% sulfur element and 7.9at% nitrogen element, such as Figure 8 shown.

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Abstract

A metal-doped graphene and a growth method of the same are provided. The metal-doped graphene includes graphene and metal elements, wherein the metal elements accounts for 1-30 at % based on the total content of the metal-doped graphene. The growth method includes performing a PECVD by using a carbon precursor, a metal precursor, and a group VI precursor in order to grow the metal-doped graphene.

Description

technical field [0001] The present invention relates to a technology of doping graphene, and in particular to a metal-doped graphene and its growth method. Background technique [0002] In recent years, the demand for energy storage components such as supercapacitors and fuel cells has increased due to the rise of electric vehicles, and the demand for related energy storage materials has also attracted much attention. Among them, graphene has high electrical conductivity and high specific surface area, so it is very suitable as the electrode material of the above-mentioned energy storage element. [0003] However, in order to increase the conductivity and other requirements, the traditional electrode coating method needs to add adhesives and conductive agents, but this will reduce the energy storage performance of the device, and the treatment is time-consuming and not environmentally friendly. Therefore, how to improve the conductivity of the material, reduce the addition ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186C23C16/12C23C16/14C23C16/26C23C16/511
CPCC01P2002/85C23C16/12C23C16/14C23C16/26C23C16/511H01G11/36H01G11/86H01M4/9041H01M4/9083H01M4/921H01M4/926Y02E60/50H01M4/8652H01M4/8867Y02E60/13
Inventor 黄昆平季宇文
Owner IND TECH RES INST
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