Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device with reduced parasitic capacitance is provided. A semiconductor device includes: a first insulating layer; a first oxide semiconductor layer on the first insulating layer; a second oxide semiconductor layer on the first oxide semiconductor layer; a source electrode layer on the second oxide semiconductor layer and the drain electrode layer; the second insulating layer on the first insulating layer, the source electrode layer and the drain electrode layer; the third insulating layer on the second insulating layer; the third oxide semiconductor layer on the second oxide semiconductor layer; a gate insulating layer on the third oxide semiconductor layer; and a gate electrode layer on the gate insulating layer. The second insulating layer is an oxygen barrier layer and has regions in contact with the side surfaces of the first oxide semiconductor layer, the second oxide semiconductor layer, the source electrode layer and the drain electrode layer. The third oxide semiconductor layer has regions in contact with the side surfaces of the second oxide semiconductor layer, the source electrode layer, the drain electrode layer, the second insulating layer, and the third insulating layer.

Description

technical field [0001] The present invention relates to an object, method or method of manufacture. In addition, the present invention relates to a process, machine, product or composition of matter. In particular, the present invention relates to, for example, a semiconductor device, a display device, a light emitting device, an electrical storage device, an imaging device, and a method of driving or manufacturing these devices. In particular, one aspect of the present invention relates to a semiconductor device or a method of manufacturing the same. [0002] Note that a semiconductor device in this specification and the like refers to all devices that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one form of a semiconductor device. In addition, storage devices, display devices, and electronic equipment may include semiconductor devices. Background technique [0003] A technique of constituting a transistor by using...

AI Technical Summary

Problems solved by technology

[0007] When the transistor is operating, in the case where there is a parasitic capacitance in the channel (for example, between the source electrode and the drain electrode), the time required for the parasitic capacitance to charge, which leads to a decrease in the responsiveness of the transistor, and even causes a response of the semiconductor device decline of sex

[0008] In addition, as miniaturization progresses, it becomes difficult to control various processes (especially, film formation, processing, etc.) that form transistors, and variations due to manufacturing processes have a great impact on the characteristics and reliability of transistors

[0009] In addition, along with miniaturization, there are problems in transistor manufacturing such as difficulty in pattern formation due to the resolution limit of exposure equipment, and the cost of equipment investment is increasing.

Images