Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A semiconductor and oxide semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve transistor characteristics, reliability effects, difficulty in pattern formation, transistor manufacturing, and semiconductor device responsiveness decline. and other problems, to achieve the effects of good electrical characteristics, low power consumption, and reduced development costs

Active Publication Date: 2021-03-16
SEMICON ENERGY LAB CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] When the transistor is operating, in the case where there is a parasitic capacitance in the channel (for example, between the source electrode and the drain electrode), the time required for the parasitic capacitance to charge, which leads to a decrease in the responsiveness of the transistor, and even causes a response of the semiconductor device decline of sex
[0008] In addition, as miniaturization progresses, it becomes difficult to control various processes (especially, film formation, processing, etc.) that form transistors, and variations due to manufacturing processes have a great impact on the characteristics and reliability of transistors
[0009] In addition, along with miniaturization, there are problems in transistor manufacturing such as difficulty in pattern formation due to the resolution limit of exposure equipment, and the cost of equipment investment is increasing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0110] In this embodiment mode, a semiconductor device according to one embodiment of the present invention and its manufacturing method will be described using the drawings.

[0111] Figure 1A , Figure 1B , Figure 1C It is a plan view and a cross-sectional view of a transistor 10 according to one embodiment of the present invention. Figure 1A is a top view, Figure 1B is along Figure 1A The sectional view shown by the dotted line A1-A2, Figure 1C is a cross-sectional view along the dashed-dotted line A3-A4. Note that in Figure 1A In , for the sake of clarity, some constituent elements are enlarged, reduced, or omitted. The direction of the dashed-dotted line A1-A2 is sometimes referred to as the channel length direction, and the direction of the dashed-dotted line A3-A4 is sometimes referred to as the channel width direction.

[0112] The transistor 10 includes a substrate 100, an insulating layer 110, an oxide semiconductor layer 121, an oxide semiconductor layer ...

Embodiment approach 2

[0376] In this embodiment mode, a transistor 14 having a structure different from that of the transistor 10 described in Embodiment 1 and a method of manufacturing the transistor 14 will be described.

[0377]

[0378] Figure 19A , Figure 19B and Figure 19C It is a plan view and a cross-sectional view of a transistor 14 according to one embodiment of the present invention. Figure 19A is a top view, Figure 19B is along Figure 19A The sectional view shown by the dotted line A1-A2, Figure 19C is along Figure 19A The cross-sectional view shown by the dotted line A3-A4. exist Figure 19A In , for the sake of clarity, some constituent elements may be enlarged, reduced, or omitted. In addition, the direction of the dashed-dotted line A1-A2 may be referred to as the channel length direction, and the direction of the dashed-dotted line A3-A4 may be referred to as the channel width direction.

[0379] Transistor 14 differs from transistor 10 in that transistor 14 is a...

Embodiment approach 3

[0394]

[0395] In this embodiment mode, the structure of an oxide semiconductor will be described.

[0396] Oxide semiconductors are classified into single crystal oxide semiconductors and non-single crystal oxide semiconductors. Non-single crystal oxide semiconductors include CAAC-OS (C Axis Aligned Crystalline Oxide Semiconductor), polycrystalline oxide semiconductor, nc-OS (nanocrystalline Oxide Semiconductor), a-likeOS (amorphous like Oxide Semiconductor) and amorphous oxide semiconductors.

[0397] From another point of view, oxide semiconductors are classified into amorphous oxide semiconductors and crystalline oxide semiconductors. Examples of crystalline oxide semiconductors include single crystal oxide semiconductors, CAAC-OS, polycrystalline oxide semiconductors, and nc-OS.

[0398] As the definition of the amorphous structure, in general, it is known that it is in a metastable state without being immobilized, has isotropy without having a heterogeneous structur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
porosityaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A semiconductor device with reduced parasitic capacitance is provided. A semiconductor device includes: a first insulating layer; a first oxide semiconductor layer on the first insulating layer; a second oxide semiconductor layer on the first oxide semiconductor layer; a source electrode layer on the second oxide semiconductor layer and the drain electrode layer; the second insulating layer on the first insulating layer, the source electrode layer and the drain electrode layer; the third insulating layer on the second insulating layer; the third oxide semiconductor layer on the second oxide semiconductor layer; a gate insulating layer on the third oxide semiconductor layer; and a gate electrode layer on the gate insulating layer. The second insulating layer is an oxygen barrier layer and has regions in contact with the side surfaces of the first oxide semiconductor layer, the second oxide semiconductor layer, the source electrode layer and the drain electrode layer. The third oxide semiconductor layer has regions in contact with the side surfaces of the second oxide semiconductor layer, the source electrode layer, the drain electrode layer, the second insulating layer, and the third insulating layer.

Description

technical field [0001] The present invention relates to an object, method or method of manufacture. In addition, the present invention relates to a process, machine, product or composition of matter. In particular, the present invention relates to, for example, a semiconductor device, a display device, a light emitting device, an electrical storage device, an imaging device, and a method of driving or manufacturing these devices. In particular, one aspect of the present invention relates to a semiconductor device or a method of manufacturing the same. [0002] Note that a semiconductor device in this specification and the like refers to all devices that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one form of a semiconductor device. In addition, storage devices, display devices, and electronic equipment may include semiconductor devices. Background technique [0003] A technique of constituting a transistor by using...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28H01L21/363H01L21/365H01L21/8234H01L21/8238H01L21/8242H01L27/088H01L27/092H01L27/108H01L27/146H01L29/786H10B12/00H10B41/70
CPCH01L29/24H01L29/7869H01L29/66969H01L21/8234H01L21/8238H01L21/28H01L27/088H01L27/092H01L27/146H01L29/78696H01L27/1225H10B12/00H01L29/78618H01L29/786H01L21/02178H01L21/02266H01L21/385H01L23/291H01L23/3171H01L29/7854
Inventor 浅见良信
Owner SEMICON ENERGY LAB CO LTD