Diaphragm structure and making method thereof
A manufacturing method and membrane technology, applied in the directions of microstructure technology, microstructure device, manufacturing microstructure device, etc., can solve the problems of affecting the mechanical properties of the structure, hindering the structure design, etc., to ensure the integrity and symmetry, improve the mechanical performance, the effect of improving yield
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Embodiment 1
[0064] Such as Figure 1a~1g As shown, the present embodiment provides a method for manufacturing a membrane structure, and the method includes the following steps:
[0065] First perform step 1), provide a single crystal silicon wafer, deposit an insulating layer on the surface of the single crystal silicon wafer, etch the insulating layer to form a window, and etch the single crystal silicon wafer through the window Periphery, forming a release hole.
[0066] The specific steps can be as follows: Figure 1a As shown, a single crystal silicon wafer 1 is provided, a layer of TEOS insulating layer 4 is deposited on its surface, and the window of the release hole is etched by the RIE process, and then the single crystal silicon wafer 1 is etched by the Deep-RIE process to form the release hole. hole 30. In this embodiment, a P-type double-polished (111) single crystal silicon wafer is used, the thickness is 450 μm, and the axis offcut is 0±0.1°. The thickness of the TEOS ins...
Embodiment 2
[0084] This embodiment provides a membrane structure and a manufacturing method thereof, which are similar to the structure and method of the first embodiment. The difference from Embodiment 1 is that in this embodiment, the diaphragm 2 includes a lower polysilicon layer 7 and an upper silicon nitride layer 10, such as Figure 4 As shown, therefore, there are minor adjustments to the corresponding preparation methods. The production steps are as follows:
[0085] 1) providing a single crystal silicon wafer, forming a silicon nitride layer on the surface of the single crystal silicon wafer, and etching the periphery of the silicon nitride layer to form release holes;
[0086] 2) continue to etch the monocrystalline silicon wafer to the desired depth along the release hole;
[0087] 3) releasing the silicon nitride layer with an etching solution through the release hole;
[0088] 4) Depositing a polysilicon material, blocking the release hole, and simultaneously forming a pol...
Embodiment 3
[0091] This embodiment provides a pressure-sensitive membrane structure and its manufacturing method. On the basis of the membrane structure prepared in Example 1, further etching and thinning operations are performed, that is, on the basis of the manufacturing steps of the original membrane structure above, step 6) is added. Such as Figure 5a ~ Figure 5h Shown is the flow chart of making the pressure-sensitive membrane structure of this embodiment.
[0092] The increased step 6) is: as Figure 5h As shown, the monocrystalline silicon layer 6 is etched to expose the polysilicon layer 7 at the top of the etching chamber 8, the exposed polysilicon layer 7 forms the thin film 11, and the remaining unetched part forms The beam-island structures 12 , 13 and the outer frame 14 .
[0093] In this embodiment, the monocrystalline silicon layer 6 is etched by a Deep-RIE process, and finally only the lowermost polycrystalline silicon layer 7 is left as the thin film 11 .
[0094] It...
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Abstract
Description
Claims
Application Information
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