PDA/Bi-AgIn5S8/TiO2 hetero-junction photoelectrode, preparation method and application

A photoelectrode and heterojunction technology, applied in electrodes, electrolysis components, electrolysis processes, etc., can solve the problems of limiting the photoelectric conversion efficiency of TiO2, and achieve the effects of good photoelectrochemical performance, good chemical stability and good repeatability

Active Publication Date: 2017-10-20
无锡智慧兴宜信息技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Titanium dioxide (TiO 2 ) is the earliest known solar hydrogen production semiconductor, however, due to TiO 2 The wide band gap (about 3.2eV) can only respond to ultraviolet light (about 5% of sunlight), which greatly limits the ability of TiO 2 photoelectric conversion efficiency

Method used

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  • PDA/Bi-AgIn5S8/TiO2 hetero-junction photoelectrode, preparation method and application

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Embodiment 1

[0032] The preparation method of this heterojunction photoelectrode is to carry out according to the following steps:

[0033] A. TiO was prepared on FTO substrate 2 nanorod arrays.

[0034] The described preparation of TiO on the FTO substrate 2 The steps of nanorod array are:

[0035] (1) 15 mL of hydrochloric acid solution was dissolved in 15 mL of deionized water, and then 0.35 mL of butyl titanate was slowly added to the solution and stirred until the solution became clear to obtain a mixed solution A.

[0036] (2) Transfer the mixed solution A to a tetrafluoroethylene-lined reaction kettle, put the cleaned FTO substrate in it, with the conductive side facing down, raise the temperature to 180°C for 6 hours, and cool naturally to obtain surface deposition monolayer TiO 2 FTO substrate of nanorod arrays.

[0037] (3) Add 2 mL of acetic acid to 100 mL of ethanol, and then add 1.5 mL of butyl titanate and stir to form a uniform mixed solution B.

[0038] (4) Take out t...

Embodiment 2

[0045] The preparation method of this heterojunction photoelectrode is to carry out according to the following steps:

[0046] A. TiO was prepared on FTO substrate 2 nanorod arrays.

[0047] The described preparation of TiO on the FTO substrate 2 The steps of nanorod array are:

[0048] (1) 15 mL of hydrochloric acid solution was dissolved in 15 mL of deionized water, and then 0.35 mL of butyl titanate was slowly added to the solution and stirred until the solution became clear to obtain a mixed solution A.

[0049] (2) Transfer the mixed solution A to a tetrafluoroethylene-lined reaction kettle, put the cleaned FTO substrate in it, with the conductive side facing down, raise the temperature to 180°C for 6 hours, and cool naturally to obtain surface deposition monolayer TiO 2 FTO substrate of nanorod arrays.

[0050] (3) Add 2 mL of acetic acid to 100 mL of ethanol, and then add 1.5 mL of butyl titanate and stir to form a uniform mixed solution B.

[0051] (4) Take out t...

Embodiment 3

[0058] The preparation method of this heterojunction photoelectrode is to carry out according to the following steps:

[0059] A. TiO was prepared on FTO substrate 2 nanorod arrays.

[0060] The described preparation of TiO on the FTO substrate 2 The steps of nanorod array are:

[0061] (1) 15 mL of hydrochloric acid solution was dissolved in 15 mL of deionized water, and then 0.35 mL of butyl titanate was slowly added to the solution and stirred until the solution became clear to obtain a mixed solution A.

[0062] (2) Transfer the mixed solution A to a tetrafluoroethylene-lined reaction kettle, put the cleaned FTO substrate in it, with the conductive side facing down, raise the temperature to 180°C for 6 hours, and cool naturally to obtain surface deposition monolayer TiO 2 FTO substrate of nanorod arrays.

[0063] (3) Add 2 mL of acetic acid to 100 mL of ethanol, and then add 1.5 mL of butyl titanate and stir to form a uniform mixed solution B.

[0064] (4) Take out t...

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Abstract

The invention belongs to the technical field of nanometer material synthesis, and particularly provides a PDA / Bi-AgIn5S8 / TiO2 hetero-junction photoelectrode, a preparation method and application. Firstly, a titanium dioxide (TiO2) nanorod array is synthesized on an FTO substrate by using a hydrothermal synthesis method, then a layer of Bi-doped Bi-AgIn5S8 is uniformly formed on the titanium dioxide (TiO2) nanorod array by using the hydrothermal synthesis method, and finally, a layer of continuous polydopamine (PDA) is formed on the surface of the Bi-AgIn5S8 by using a chemical bath deposition method (CBD). The surface of a semiconductor is coated with a layer of PDA, the semiconductor can be prevented from making direct contact with a water solution, and serious photocorrosion is avoided, so that the stability of the semiconductor is improved. Therefore, the problem that in the process of hydrogen production by decomposing water with PEC, the semiconductor AgIn5S8 material is most likely to be influenced by photocorrosion and accordingly is inactivated can be solved so that the stable, permanent and high hydrogen production rate can be kept.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial synthesis. Firstly, a hydrothermal synthesis method is used to synthesize titanium dioxide (TiO 2 ) nanorod array, and then use the hydrothermal synthesis method to uniformly form a layer of Bi-doped Bi-AgIn on it 5 S 8 , and finally use chemical bath deposition (CBD) on the Bi-AgIn 5 S 8 A continuous layer of polydopamine (PDA) forms on the surface. Background technique [0002] Since the 21st century, the excessive use of fossil energy has caused serious damage to the global environment, so the development and utilization of green energy has become one of the most important challenges facing mankind; photoelectrochemical (PEC) water splitting hydrogen production is a It is a promising technology, which can realize the conversion of solar energy to chemical energy, and the non-polluting combustion process makes hydrogen have incomparable advantages in green energy. The water splitting p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82Y40/00C25B1/00C25B1/04C25B11/04
CPCB82Y40/00C25B1/04C25B1/55C25B11/091Y02E60/36Y02P20/133
Inventor 范伟强管鹏李春发白红叶葛燚林
Owner 无锡智慧兴宜信息技术有限公司
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