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A simple preparation method of black phosphorus thin film with adjustable film thickness

A technology for thin film preparation and black phosphorus is applied in the field of preparation and regulation of two-dimensional material systems, which can solve problems such as structural damage, and achieve the effects of simple preparation method, simple and easy experimental operation, and good automatic interface.

Active Publication Date: 2019-03-29
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in general, these methods tend to introduce different degrees of structural damage and impurity elements, and should be more cautious in application

Method used

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  • A simple preparation method of black phosphorus thin film with adjustable film thickness
  • A simple preparation method of black phosphorus thin film with adjustable film thickness
  • A simple preparation method of black phosphorus thin film with adjustable film thickness

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] 1) preliminary preparation of reactants; including the following steps:

[0062] 101) Ultrasonic cleaning the glass container with alcohol and ultrapure water in sequence; weigh 20 mg of black phosphorus powder and 1 mg of Mg(NO 3 ) 2 100mL isopropanol liquid was measured with a graduated cylinder; the mixed solution of solid and isopropanol was placed in an ultrasonic machine, and ultrasonically sounded for 2 hours to prepare a black phosphorus quantum dot solution. The substrate side of the silicon wafer is covered with polyvinyl chloride tape on the insulating layer to form a sharp film edge for accurate measurement of its thickness.

[0063] 2) Utilize the electrophoresis method to prepare black phosphorus film; comprise the following steps:

[0064] 201) Clamp a 1cm*2cm silicon wafer substrate to the cathode of the electrophoresis instrument, and clamp a graphite electrode sheet of the same size to the anode of the electrophoresis instrument. Set the voltage of ...

Embodiment 2

[0068] 1) preliminary preparation of reactants; including the following steps:

[0069] 101) Ultrasonic cleaning the glass container with alcohol and ultrapure water in sequence; weigh 20 mg of black phosphorus powder and 1 mg of Mg(NO 3 ) 2 100mL isopropanol liquid was measured with a graduated cylinder; the mixed solution of solid and isopropanol was placed in an ultrasonic machine, and ultrasonically sounded for 2 hours to prepare a black phosphorus quantum dot solution. The substrate side of the silicon wafer is covered with polyvinyl chloride tape to form a sharp film edge, which is convenient for accurate measurement of its thickness.

[0070] 2) Utilize the electrophoresis method to prepare black phosphorus film; comprise the following steps:

[0071] 201) Clamp a 1cm*2cm silicon wafer substrate to the cathode of the electrophoresis instrument, and clamp a graphite electrode sheet of the same size to the anode of the electrophoresis instrument. Set the voltage of the...

Embodiment 3

[0074] 1) preliminary preparation of reactants; including the following steps:

[0075] 101) Ultrasonic cleaning the glass container with alcohol and ultrapure water in sequence; weigh 20 mg of black phosphorus powder and 1 mg of Mg(NO 3 ) 2 100mL isopropanol liquid was measured with a graduated cylinder; the mixed solution of solid and isopropanol was placed in an ultrasonic machine, and ultrasonically sounded for 2 hours to prepare a black phosphorus quantum dot solution. The substrate side of the silicon wafer is covered with polyvinyl chloride tape to form a sharp film edge, which is convenient for accurate measurement of its thickness.

[0076] 2) Utilize the electrophoresis method to prepare black phosphorus film; comprise the following steps:

[0077] 201) Clamp a 1cm*2cm silicon wafer substrate to the cathode of the electrophoresis instrument, and clamp a graphite electrode sheet of the same size to the anode of the electrophoresis instrument. Set the voltage of the...

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Abstract

The invention discloses a simple preparation method for a black phosphorus thin film with the film thickness capable of being adjusted and controlled, and belongs to the field of two-dimensional material nano system preparation regulation and control. The method includes the steps that an ultrasonic assisted solution stripping method is adopted to prepare black phosphorus quantum dots in an isopropyl alcohol solution at first, and the black phosphorus quantum dots are characterized in that the dimensions are 5-50nm; then an electrophoresis method is utilized, the cathode is connected with a silicon wafer with the dimensions being 1cm*2cm, and the anode is connected with a graphitic sheet electrode; and the method of controlling the electrophoresis voltage, electrophoresis time and reaction liquid concentration is adopted to control the black phosphorus thin film to grow, and the film thickness ranges from 9nm to 3nm. The method is easy to operate, high in efficiency, environmentally friendly and capable of obtaining stable and high-uniformity black phosphorus thin films of different thicknesses.

Description

technical field [0001] The invention belongs to the field of preparation and control of two-dimensional material systems, and designs a simple method for preparing a black phosphorus thin film whose film thickness can be controlled. Background technique [0002] As a new type of two-dimensional material, black phosphorus has been widely concerned by researchers because of its good electrical and optoelectronic properties. Black phosphorus is a bipolar semiconductor with a narrow band gap, and its band gap is a direct band gap. The band gap of single-layer black phosphorus is 1.7eV and the band gap of multi-layer black phosphorus is 0.3eV; through the study of thin-layer black phosphorus at room temperature The photoluminescent properties of the crystals have determined the fluorescence peaks of the single-layer black phosphorus crystals at 1.65eV and 2.15eV respectively, which proves the wide-bandgap regulation ability of the black phosphorus crystals from the infrared and v...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B7/00
CPCC25B7/00
Inventor 赵艳黄杰
Owner BEIJING UNIV OF TECH