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High-reliability negative temperature coefficient thermistor and preparation method thereof

A thermistor and negative temperature coefficient technology, which is applied in the direction of resistors with negative temperature coefficient, non-adjustable metal resistors, resistors, etc., to achieve the effects of stable operation, high test accuracy and easy installation

Inactive Publication Date: 2017-11-14
KAITE ELECTRONICS YUNMENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, at present, the resistance value of similar products in China has an annual drift rate of ≥ 1 weight part
In some fields (such as medical equipment) that require relatively high temperature control accuracy, it is far from meeting the requirements

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The chip material of the negative temperature coefficient thermistor described in this embodiment includes the following components: 58 parts by weight of trimanganese tetroxide, 32 parts by weight of tricobalt tetroxide, 5 parts by weight of nickel oxide, and 5 parts by weight of magnesium oxide.

[0022] The preparation method is as follows:

[0023] Step 1: Weigh several kinds of raw materials in proportion respectively, and place them in a ball mill jar for ball milling for 24 hours;

[0024] Step 2: After drying the mixture at 100°C, place it in a muffle furnace for calcination at 850°C;

[0025] Step 3: Use an isostatic press to press into a cylinder of a certain shape, and sinter it into a dense ceramic body in a high-temperature furnace at 1240°C.

[0026] Step 4: Cut into 0.5mm thin slices with a high-precision slicer, and then coat silver electrodes on both sides, and cut into 1.2×1.2 small chips with a high-precision slicer.

[0027] Step 5: Weld the chip w...

Embodiment 2

[0030] The chip material of the negative temperature coefficient thermistor described in this embodiment includes the following components: 56 parts by weight of trimanganese tetroxide, 34 parts by weight of tricobalt tetroxide, 3 parts by weight of nickel oxide, and 7 parts by weight of magnesium oxide.

[0031] Its preparation method is identical with embodiment 1.

Embodiment 3

[0033] The chip material of the negative temperature coefficient thermistor described in this embodiment includes the following components: 60 parts by weight of trimanganese tetroxide, 30 parts by weight of tricobalt tetroxide, 7 parts by weight of nickel oxide, and 3 parts by weight of magnesium oxide.

[0034] Its preparation method is identical with embodiment 1.

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PUM

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Abstract

The invention discloses a highly reliable negative temperature coefficient thermistor and a preparation method thereof, which belong to the field of electronic components and their manufacture. The invention aims to provide a high-reliability negative temperature coefficient thermistor whose resistance value annual drift rate is less than 0.05 parts by weight. The thermistor of the present invention comprises a chip, epoxy resin covered around the chip and lead wires, the two sides of the chip are coated with metal electrodes, and one end of the lead wires is fixed on the metal electrodes; the chip material consists of the following components: The components are divided into: 56-60 parts by weight of trimanganese tetraoxide, 30-34 parts by weight of tricobalt tetroxide, 3-7 parts by weight of nickelous oxide, and 3-7 parts by weight of magnesium oxide. The thermistor can be used for temperature control and inspection of automobile air-conditioning, medical treatment, environmental protection, meteorology, and food processing equipment; liquid level indication and flow measurement.

Description

technical field [0001] The invention belongs to the field of electronic components and its manufacture, in particular to a highly reliable negative temperature coefficient thermistor and a preparation method thereof. Background technique [0002] Negative temperature coefficient thermistor is a semiconductor ceramic element made of high-purity transition metal oxides as the main material. It is made of metal oxides such as manganese, cobalt, nickel and copper, and is manufactured by ceramic technology. of. These metal oxide materials all have semiconductor properties, because they are completely similar to semiconductor materials such as germanium and silicon in terms of conductivity. When the temperature is low, the number of carriers (electrons and holes) of these oxide materials is small, so the resistance value is high; as the temperature increases, the number of carriers increases, so the resistance value decreases. Therefore, it has the characteristic that the resist...

Claims

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Application Information

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IPC IPC(8): H01C7/04
CPCH01C7/043
Inventor 郑传发赵海波
Owner KAITE ELECTRONICS YUNMENG
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