Diamond/silicon carbide composite material and preparing method thereof

A technology of composite materials and silicon carbide, which is applied in the field of diamond/silicon carbide composite materials and its preparation, can solve the problems of easy deformation of composite materials, uneven microstructure, incomplete siliconization reaction, etc., and achieve active chemical properties and microstructure The effect of uniform structure and high density

Inactive Publication Date: 2017-11-17
HUATONG XINAN BEIJING SCI & TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the defect that the composite material in the prior art is easily deformed, the siliconization reaction is not complete, graphite remains in the material, and the microstructure is uneven, the invention provides a diamond / silicon carbide composite material and its preparation method

Method used

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  • Diamond/silicon carbide composite material and preparing method thereof
  • Diamond/silicon carbide composite material and preparing method thereof
  • Diamond/silicon carbide composite material and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Raw materials: 10g of phenolic resin, 15g of carbon black, 15g of silicon carbide, and 60g of 50-mesh diamond.

[0027] Preparation method: at room temperature, firstly add carbon powder and phenolic resin to the ball mill and mix them with alcohol, then put them on the ball mill for 4 hours, then add silicon carbide ball mill for 4 hours, and finally add diamond ball mill for 1 hour; after drying, dry, crush and sieve to obtain Composite material; at room temperature, the composite material was press molded at 150 MPa to obtain a green body; then placed in a cracking furnace for 3 hours under the protection of 1100° C. argon to crack to obtain a porous green body.

[0028] Put the porous green compact in a siliconizing furnace at 1700°C for 1 hour to obtain a diamond / silicon carbide ceramic matrix composite material.

Embodiment 2

[0030] Raw materials: 10g of phenolic resin, 10g of carbon black, 30g of silicon carbide, 50g of 50 mesh diamond.

[0031] At normal temperature, the above raw materials are mixed with alcohol and placed on a ball mill for 8 hours to disperse, dried in the air, crushed, sieved, molded at normal temperature, and then placed in a cracking furnace under the protection of argon at 1000°C for cracking. Finally, it is placed in a siliconizing furnace at 1600°C for siliconizing, and finally a dense high-performance diamond / silicon carbide ceramic matrix composite material is obtained.

Embodiment 3

[0033] Mix 10g of phenolic resin, 10g of carbon black, 20g of silicon carbide, and 60g of 50-mesh diamond. At room temperature, mix them with alcohol and put them on a ball mill for 8 hours to disperse. After drying, dry, pulverize, sieve, and use Molded at room temperature, and then placed in a cracking furnace for cracking under the protection of argon at 1000°C. Finally, it is placed in a siliconizing furnace at 1650°C for siliconizing, and finally a dense high-performance diamond / silicon carbide ceramic matrix composite material is obtained.

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Abstract

The invention discloses a diamond/silicon carbide composite material. The diamond/silicon carbide composite material comprises, by weight, 10-15 parts of binder, 5-20 parts of carbon black, 30-60 parts of silicon carbide and 30-60 parts of diamond. According to the diamond/silicon carbide composite material, silicon carbide is added into the raw materials, carbon black is used for replacing graphite, so that gaseous silicon completely penetrates in the siliconing reaction and reacts with carbon black, no remaining carbon exists in the generated composite material, and the composite material is not prone to deformation.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials, and in particular relates to a diamond / silicon carbide composite material and a preparation method thereof. Background technique [0002] With the rapid development of modern electronic information technology, electronic products are developing in the direction of miniaturization, portability and multi-function. Electronic packaging materials and technologies make electronic devices eventually become functional products. Among them, electronic packaging materials are used to carry electronic components and their connecting lines, as a base material for mechanical support, sealing and environmental protection, signal transmission, heat dissipation and shielding. Classified by material composition, electronic packaging materials can be divided into metal-based, plastic-based and ceramic-based packaging materials. Compared with metal-based and plastic-based materials, the advantages of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/532C04B35/565C04B35/65C04B35/622
CPCC04B35/532C04B35/573C04B35/622C04B2235/424C04B2235/427C04B2235/656C04B2235/77C04B2235/96C04B2235/9607
Inventor 曹英斌涂卡西
Owner HUATONG XINAN BEIJING SCI & TECH DEV
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