Halogen-free electronic material with high dielectric performance and preparation method of material

An electronic material and high dielectric technology, which is applied in the field of halogen-free high dielectric performance electronic materials and their preparation, can solve the problems of not achieving flame retardant effect, reducing the dielectric performance of materials, etc., to prevent insufficient curing and improve processing. performance, the effect of avoiding local defects

Inactive Publication Date: 2017-11-17
SUZHOU YIKETAI ELECTRONICS MATERIAL
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Problems solved by technology

However, if the existing technology does not use halogen flame retardants, it will not achieve a good flam

Method used

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  • Halogen-free electronic material with high dielectric performance and preparation method of material

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Embodiment 1

[0021] A preparation method of a halogen-free high dielectric performance electronic material, comprising the following steps: adding 4g of fullerene derivative PCBM to 4000g of cyanate ester chlorobenzene solution (25wt%), then adding 100g of maleic anhydride, and refluxing After reacting for 40 minutes, add 120g of biscarboxyphthalimide, react for 1 hour, and then dry and remove the solvent at 135°C to obtain a cyanate ester prepolymer; mix the cyanate ester prepolymer with 100g of diphenylphosphine oxide , 300g naphthol phenolic resin, 450g tetraglycidyl diaminodimethyl benzene mixed and stirred at 110°C for 1 hour, then added 60g titanium dioxide whiskers and 80g enol silicon ether, continued stirring for 50 minutes, and naturally cooled to obtain cyanic acid ester modified product; then crush the cyanate ester modified product, add 200g polyphenylene sulfide and 30g hollow alumina to the extruder, and extrude at 155°C to obtain halogen-free high dielectric performance part...

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Abstract

The invention provides a halogen-free electronic material with high dielectric performance and a preparation method of the material. A fullerene derivative is added to a chlorobenzene cyanate solution, maleic anhydride is added, the mixture is subjected to a reflux reaction for 40 min, then bi-carboxylphthalimide is added, the mixture reacts for 1 h and then is subjected to rotary evaporation and drying until a solvent is removed, and a cyanate prepolymer is obtained; the cyanate prepolymer is mixed with diphenylphosphine oxide, naphthol-phenolic resin and tetraglycidyl diamino-dimethylene benzene, the mixture is stirred for 1 h at the temperature of 110 DEG C, titanium dioxide whiskers and silyl enol ether are added, the mixture is continuously stirred for 50 min and naturally cooled, and a cyanate modifier is obtained; then the cyanate modifier is crushed and added to an extruder with polyphenylene sulfide and hollow aluminum oxide, extrusion is performed at the temperature of 155 DEG C, and halogen-free particles with high dielectric performance are obtained; the halogen-free particles with high dielectric performance are subjected to hot pressing, and the halogen-free electronic material with high dielectric performance is obtained. The prepared product has excellent dielectric performance and has a good flame-retardant effect and good thermal performance.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and in particular relates to a halogen-free high-dielectric performance electronic material and a preparation method thereof. Background technique [0002] Electronic materials have an extremely wide range of applications, which require good dielectric and insulating properties. At the same time, heat resistance and flame retardancy are also critical, especially the dielectric properties are directly related to the application level of the material. However, if the prior art does not use a halogen flame retardant, a good flame retardant effect cannot be achieved, and at the same time, the phosphorus flame retardant will reduce the dielectric properties of the material. Contents of the invention [0003] The invention provides a halogen-free electronic material with high dielectric performance and a preparation method thereof. [0004] In order to achieve the above-mentioned purpos...

Claims

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Application Information

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IPC IPC(8): C08L79/04C08L61/06C08L81/02C08K13/04C08K7/08C08K5/5415C08K7/24C08K3/04C08G73/06
CPCC08G73/0644C08K2201/003C08K2201/004C08L79/04C08L2201/02C08L2201/08C08L2201/22C08L2203/20C08L61/06C08L81/02C08K13/04C08K7/08C08K5/5415C08K7/24C08K3/04
Inventor 彭代信韩建
Owner SUZHOU YIKETAI ELECTRONICS MATERIAL
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