Device for growing graphene film on substrate surface

Abstract

The invention discloses a device for growing a graphene film on a substrate surface. The device comprises an atmosphere tank used for providing a protective gas environment, wherein a molten bath is formed in the atmosphere tank; a heat element is arranged on the outer wall of the molten bath; a substrate crane, a batch feeder and a slag separator are arranged above the molten bath; a propeller agitator is arranged at the bottom of the molten bath and is in an upward direction; a cooler is arranged above the propeller agitator; the batch agitator is used for putting carbon into the molten bath; the molten bath is filled with liquid metal, and the temperature of the liquid metal is controlled through the heat element; the substrate crane is used for suspending a substrate, and enables the substrate to be immersed into the liquid metal in the molten bath; the slag separator is used for removing undissolved carbon floating on the surface of the liquid metal; the cooler is used for cooling the liquid metal; and the propeller agitator enables the liquid metal to generate convection current from bottom to top. The graphene film prepared by the device is few in defects, high in quality, high in uniformity and low in cost, and is applicable to large-scale popularization and application.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a device for growing a graphene film on a substrate surface. Background technique [0002] At present, there are two main methods for growing graphene film on the surface of the substrate: one is the liquid-phase coating method, that is, using liquid-phase exfoliated graphene or reduced graphene oxide as raw material to coat a layer of graphene film on the surface of the substrate; The other is the chemical vapor deposition method, that is, the graphene film is obtained by depositing chemical reactants on the surface of the substrate. [0003] For the liquid-phase coating method, there are mainly methods such as spin coating, roller coating, and spray coating. This method can prepare large-area graphene films on a large scale and at low cost. The disadvantage is that the prepared graphene films have poor continuity, uniformity and quality. Poor, there is a big gap w...

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Problems solved by technology

[0003] For the liquid-phase coating method, there are mainly methods such as spin coating, roller coating, and spray coating. This method can prepare large-area graphene films on a large scale and at low cost. The disadvantage is that the prepared graphene films have poor continuity, uniformity and quality. Poor, there is a big gap with the theoretical performance

The reasons are: 1) When using liquid exfoliated graphene as a raw material, due to the extremely low concentration of the graphene dispersion, when the coating is too thin, the distribution of graphene sheets on the surface of the substrate is uneven and discontinuous, and the light transmittance is low. Although it is good, its conductivity is poor; when the coating is too thick, the number of graphene sheets on the substrate surface is too many, and the layers are superimposed seriously. Although the conductivity is good, the light transmission performance is very poor; 2) when using reduced graphene oxide As a raw material, the chemical reduction method has low cost, but it cannot completely restore the structural damage caused by the oxidation process, which greatly reduces the performance of graphene film; the high-temperature reduction method can reduce graphene oxide more thoroughly, but it is difficult to guarantee at high temperature. film formability

[0004] For the chemical vapor deposition method, the graphene film is usually grown on the metal foil first, and then the film is transferred to other substrates. The graphene film produced by this method is of high quality and the number of layers is controllable. The disadvantage is that the area of ​​the metal foil is limited. , and mostly use high-purity copper and nickel as substrates, the cost is high, it is difficult to prepare large-scale high-quality films, and it is difficult to promote and use them on a large scale

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