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A double-sided polishing method for a wafer

A double-sided polishing and wafer technology, applied in surface polishing machine tools, polishing machine tools, grinding/polishing equipment, etc., can solve problems such as wafer back corrosion, wafer roughness quality and LLS quality degradation, and achieve suppression Effects of etching, improvement of local light scatterer quality and roughness quality, and cost reduction

Active Publication Date: 2020-03-31
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a double-sided polishing method for wafers, which is used to solve the problems caused by the residue of high-alkaline coarse polishing liquid in the prior art in the double-sided polishing process of wafers. Corrosion on the back of the circle reduces the quality of wafer roughness and LLS

Method used

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  • A double-sided polishing method for a wafer
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  • A double-sided polishing method for a wafer

Examples

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Effect test

Embodiment 1

[0071] The present invention provides a double-sided polishing method for a wafer, please refer to image 3 , is shown as a process flow chart of the method, comprising the steps:

[0072] S1: loading the wafer into the cutout of the carrier disc, and placing it between the upper polishing disc covered with the upper polishing pad and the lower polishing disc covered with the lower polishing pad;

[0073] S2-1: supplying a rough polishing liquid in the first stage of polishing to roughly polish the wafer to remove the oxide layer on the surface of the wafer;

[0074] S2-2: supply a rough polishing liquid in the second stage of polishing to roughly polish the wafer, and remove a preset amount of wafer material;

[0075] S2-3: Stop supplying the rough polishing liquid in the third stage of polishing, and supply the fine polishing liquid to perform fine polishing on the wafer; wherein, the fine polishing liquid contains a polymer, and during the fine polishing process, the polym...

Embodiment 2

[0087] This embodiment adopts basically the same technical solution as that of Embodiment 1, the difference is that in Embodiment 1, the fine polishing liquid used in step S2-3 contains abrasives, while in this embodiment, the polishing solution used in step S2-3 The fine polishing solution is a polishing agent solution that does not contain abrasives.

[0088] Since the main function of step S2-3 is to form a polymer film on the back of the wafer, this purpose can be achieved even if the polishing liquid does not contain abrasives. In addition, step S2-1 and step S2-2 will also leave a lot of abrasive particles on the surface of the polishing pad and the wafer. The combination of the polishing agent solution and these abrasive particles can also play the role of step S2-3 in the first embodiment. The purpose of the localized light scatterer particles.

Embodiment 3

[0090] The present invention provides a double-sided polishing method for a wafer, please refer to Figure 4 , is shown as a process flow chart of the method, comprising the steps:

[0091] S1: loading the wafer into the cutout of the carrier disc, and placing it between the upper polishing disc covered with the upper polishing pad and the lower polishing disc covered with the lower polishing pad;

[0092] S2-1: In the first stage of polishing, supply a rough polishing liquid to polish the wafer, and remove the oxide layer on the surface of the wafer;

[0093] S2-2: In the second stage of polishing, supply a rough polishing liquid to polish the wafer, and remove a preset amount of wafer material;

[0094] S2-3: In the third stage of polishing, a rough polishing solution added with a water-soluble polymer is supplied to polish the wafer. During the polishing process, the polymer is bonded to the back of the wafer to form the polymer film.

[0095] S3: supplying deionized wat...

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Abstract

The invention provides a double-sided polishing method for a wafer. The method comprises the steps that S1, the wafer is loaded in a cutting of a carrier plate and placed between an upper polishing plate covered with an upper polishing pad and a lower polishing plate covered with a lower polishing pad; S2, a polishing solution is supplied between the wafer and the upper polishing pad and the lower polishing pad, polishing is conducted on the front and back of the wafer, and a polymer thin film is formed on the back of the wafer; S3, deionized water is supplied between the wafer and the upper polishing pad and the lower polishing pad, and the polishing solution on the wafer, the upper polishing pad and the lower polishing pad is removed. In the double-sided polishing process, the polymer thin film is formed on the back of the wafer, which effectively isolates the back of the wafer from the high alkali coarse polishing solution remaining in the coarse polishing step, the back of the wafer is isolated from a chemical reagent of the subsequent hydrophilic treatment, the etching on the back of the wafer is inhibited, and the quality of a local light scattering body and the roughness quality on the back of the wafer are improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing and relates to a double-sided polishing method of a wafer. Background technique [0002] Semiconductor wafers are usually obtained from a single crystal ingot, and after the grinding, cleaning and etching steps are performed on the semiconductor wafer cut from the single crystal ingot, the surface of the semiconductor wafer is polished by polishing. [0003] Usually, in order to achieve the polishing precision of silicon wafers and meet the technical indicators required by integrated circuit silicon wafers, two steps of polishing are required: rough polishing and fine polishing. The rough polishing process usually includes the polishing of the front side and the back side of the wafer, and the fine polishing process usually only targets the front side of the wafer. When performing step-by-step chemical-mechanical polishing on the surface of a silicon wafer, the polishing liquid used in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00B24B29/02H01L21/306
CPCB24B37/04B24B39/06H01L21/30625
Inventor 崔世勳李章熙
Owner ZING SEMICON CORP